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Browsing by Author "Wang, X.P."

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    Evidences of anodic-oxidation reset mechanism in TiN\NiO\Ni RRAM cells

    Goux, Ludovic  
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    Degraeve, Robin  
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    Govoreanu, Bogdan  
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    Chou, H.-Y.
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    Afanasiev, Valeri  
    Proceedings paper
    2011, Symposium on VLSI Technology, 13/06/2011, p.24-25
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    High performance & CMOS integration friendly dual metal gate MOSFETs using TaN/Ru or TaN/W/Ru stacking multi-layers on HfLaO gate dielectric

    Wang, X.P.
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    Li, M.F.
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    Yu, HongYu
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    Yang, J.J.
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    Loh, W.Y.
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    Zhu, C.X.
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    Du, A.Y.
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    Trigg, A.D.
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    Zhang, G.
    Proceedings paper
    2007, International Conference on Solid State Devices and Materials - SSDM, 18/09/2006
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    Improved electrical and reliability characteristics of HfN/HfO2 gated nMOSFET with 0.95 nm EOT fabricated using a gate-first process

    Kang, JinFeng
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    Yu, HongYu
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    Ren, C.
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    Wang, X.P.
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    Li, M.F.
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    Chan, D.S.H.
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    Yeo, Y.C.
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    Sa, N.
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    Yang, H.
    Journal article
    2005-04, IEEE Electron Device Letters, (4) 26, p.237-239
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    Practical solutions to enhance EWF tunability of Ni FUSI gate electrode on HfO2

    Wang, X.P.
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    Yang, J.J.
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    Chen, J.D.
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    Xie, R.L.
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    Li, M.-F.
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    Zhu, C.X.
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    Yu, HongYu
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    Du, A.Y.
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    Lim, P.C.
    Proceedings paper
    2007, International Conference on Solid State Devices and Materials - SSDM, 18/09/2007, p.854-855
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    Wide Vfb and Vth tunability for metal-gated MOS devices with HfLaO gate dielectrics

    Wang, X.P.
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    Yu, HongYu
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    Li, M.F
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    Zhu, C.X.
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    Biesemans, Serge  
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    Chin, A.
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    Sun, Y.
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    Feng, Y.
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    Lim, A.
    Journal article
    2007-04, IEEE Electron Device Letters, (28) 4, p.258-260
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    Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric

    Wang, X.P.
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    Li, M.F.
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    Yu, HongYu
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    Yang, J.J.
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    Chen, J.D.
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    Zhu, C.X.
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    Du, A.Y.
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    Loh, W.Y.
    Journal article
    2008, IEEE Electron Device Letters, (29) 1, p.50-53
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    Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices

    Wang, X.P.
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    Lim, A.E.J.
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    Yu, HongYu
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    Li, M.F.
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    Ren, C.
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    Loh, W.Y.
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    Zhu, C.X
    ;
    Chin, A.
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    Trigg, A.D.
    Journal article
    2007, IEEE Trans. Electron Devices, (54) 11, p.2871-2877

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