Browsing by Author "Wang, X.P."
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Publication Evidences of anodic-oxidation reset mechanism in TiN\NiO\Ni RRAM cells
Proceedings paper2011, Symposium on VLSI Technology, 13/06/2011, p.24-25Publication High performance & CMOS integration friendly dual metal gate MOSFETs using TaN/Ru or TaN/W/Ru stacking multi-layers on HfLaO gate dielectric
;Wang, X.P. ;Li, M.F. ;Yu, HongYu ;Yang, J.J. ;Loh, W.Y. ;Zhu, C.X. ;Du, A.Y. ;Trigg, A.D.Zhang, G.Proceedings paper2007, International Conference on Solid State Devices and Materials - SSDM, 18/09/2006Publication Improved electrical and reliability characteristics of HfN/HfO2 gated nMOSFET with 0.95 nm EOT fabricated using a gate-first process
;Kang, JinFeng ;Yu, HongYu ;Ren, C. ;Wang, X.P. ;Li, M.F. ;Chan, D.S.H. ;Yeo, Y.C. ;Sa, N.Yang, H.Journal article2005-04, IEEE Electron Device Letters, (4) 26, p.237-239Publication Practical solutions to enhance EWF tunability of Ni FUSI gate electrode on HfO2
;Wang, X.P. ;Yang, J.J. ;Chen, J.D. ;Xie, R.L. ;Li, M.-F. ;Zhu, C.X. ;Yu, HongYu ;Du, A.Y.Lim, P.C.Proceedings paper2007, International Conference on Solid State Devices and Materials - SSDM, 18/09/2007, p.854-855Publication Wide Vfb and Vth tunability for metal-gated MOS devices with HfLaO gate dielectrics
Journal article2007-04, IEEE Electron Device Letters, (28) 4, p.258-260Publication Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric
;Wang, X.P. ;Li, M.F. ;Yu, HongYu ;Yang, J.J. ;Chen, J.D. ;Zhu, C.X. ;Du, A.Y.Loh, W.Y.Journal article2008, IEEE Electron Device Letters, (29) 1, p.50-53Publication Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices
;Wang, X.P. ;Lim, A.E.J. ;Yu, HongYu ;Li, M.F. ;Ren, C. ;Loh, W.Y. ;Zhu, C.X ;Chin, A.Trigg, A.D.Journal article2007, IEEE Trans. Electron Devices, (54) 11, p.2871-2877