Browsing by Author "Wormington, Matthew"
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Publication Asymmetric relaxation of SiGe in patterned Si line structures
Proceedings paper2007, International Conference on Frontiers of Characterization and Metrology for Nanoelectronics at NIST, 27/03/2007Publication In-line characterization of heterojunction bipolar transistor base layers by high-resolution X-ray diffraction
Proceedings paper2007, Analytical Techniques for Semiconductor Materials and Process Characterization 5 - ALTECH, 13/09/2007, p.151-160Publication Model-free measurement of lateral recess in gate-all-around transistors with micro hard-X-ray fluorescence
Journal article2023, JOURNAL OF MICRO-NANOPATTERNING MATERIALS AND METROLOGY-JM3, (22) 3, p.Art. 034001Publication Observation and understanding of anisotropic strain relaxation in selectively grown SiGe fin structures
Journal article2017, Nanotechnology, (28) 14, p.145703Publication Processing technologies for advanced Ge devices
Meeting abstract2016-10, PRiME 2016 - 230th ECS Meeting (Fall) - Electrochemical Society: SiGe, Ge & Related Compounds: Materials, Processing and Devices, 2/10/2016, p.1982Publication Processing technologies for advanced Ge devices
Proceedings paper2016-09, SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7, 2/10/2016, p.491-503Publication Processing technologies for advanced Ge devices
Journal article2017, ECS Journal of Solid State Science and Technology, (6) 1, p.14-20Publication Strain and composition monitoring in various (Si)Ge fin structures using in-line HRXRD
Meeting abstract2017, Frontiers of Characterization and Metrology for Nanoelectronics - FCMN, 21/03/2017Publication Strain and compositional analysis of (Si)Ge fin structures using high resolution X-ray diffraction
Journal article2017, Physica Status Solidi C, (14) 12, p.1700156