Browsing by Author "Wormington, Matthew"
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Publication Asymmetric relaxation of SiGe in patterned Si line structures
Proceedings paper2007, International Conference on Frontiers of Characterization and Metrology for Nanoelectronics at NIST, 27/03/2007Publication In-line characterization of heterojunction bipolar transistor base layers by high-resolution X-ray diffraction
Proceedings paper2007, Analytical Techniques for Semiconductor Materials and Process Characterization 5 - ALTECH, 13/09/2007, p.151-160Publication Model-free measurement of lateral recess in gate-all-around transistors with micro hard-X-ray fluorescence
Journal article2023, JOURNAL OF MICRO-NANOPATTERNING MATERIALS AND METROLOGY-JM3, (22) 3, p.Art. 034001Publication Observation and understanding of anisotropic strain relaxation in selectively grown SiGe fin structures
Journal article2017, Nanotechnology, (28) 14, p.145703Publication Processing technologies for advanced Ge devices
Journal article2017, ECS Journal of Solid State Science and Technology, (6) 1, p.14-20Publication Processing technologies for advanced Ge devices
Proceedings paper2016-09, SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7, 2/10/2016, p.491-503Publication Processing technologies for advanced Ge devices
Meeting abstract2016-10, PRiME 2016 - 230th ECS Meeting (Fall) - Electrochemical Society: SiGe, Ge & Related Compounds: Materials, Processing and Devices, 2/10/2016, p.1982Publication Strain and composition monitoring in various (Si)Ge fin structures using in-line HRXRD
Meeting abstract2017, Frontiers of Characterization and Metrology for Nanoelectronics - FCMN, 21/03/2017Publication Strain and compositional analysis of (Si)Ge fin structures using high resolution X-ray diffraction
Journal article2017, Physica Status Solidi C, (14) 12, p.1700156