Browsing by Author "Wouters, Dirk"
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Publication 0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications
Proceedings paper2008, Technical Digest International Electron Devices Meeting - IEDM, 15/12/2008, p.929-632Publication 10x10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
Proceedings paper2011, IEEE International Electron Devices Meeting - IEDM, 5/12/2011, p.729-732Publication A fast and reliable method used to investigate the size-dependent retention lifetime of a phase-change line cell
Journal article2011, Solid-State Electronics, (58) 1, p.17-22Publication A ferroelectric capacitor model accounting for the switching kinetics and polarization relaxation
Meeting abstract2001, 13th International Symposium on Integrated Ferroelectrics - ISIF, 11/03/2001, p.50Publication A highly reliable 3-dimensional integrated SBT ferroelectric capacitor enabling FeRAM scaling
; ; Maes, DavidJournal article2005-04, IEEE Trans. Electron Devices, (52) 4, p.447-453Publication A novel method for extracting the temperature-dependent crystal-growth parameters in fast-growth phase-change memories
Journal article2010, IEEE Electron Device Letters, (31) 11, p.1287-1289Publication A time independent model for simulating switching current and hysteresis characteristics of PZT thin-film ferroelectric capacitors
Publication Absorption-reflection infrared studies of sol-gel prepared ferroelectric Pb(Zr,Ti)O3 thin films on Pt electrodes
Publication Advanced materials enabling CMOS scaling roadmap
Wouters, DirkProceedings paper2010, Semicon West, 13/07/2010Publication Aequeous chemical solution deposition for ferroelectric thin films
; Vanhoyland, G.Journal article2002, Integrated Ferroelectrics, 45, p.113-122Publication Alternative high-k dielectrics for semiconductor applications
Journal article2009, Journal of Vacuum Science and Technology B, (27) 1, p.209-213Publication Alternative high-k dielectrics for semiconductor applications
Oral presentation2008, 15th Workshop on Dielectrics in Microelectronics - WODIMPublication Amorphous-crystalline phase transitions in chalcogenide materials for memory applications
Journal article2008, Phase Transitions, (81) 7_8, p.773-790Publication Analysis of complementary RRAM switching
Journal article2012, IEEE Electron Device Letters, (33) 8, p.1186-1188Publication Analysis of the effect of cell parameters on the maximum RRAM array size considering both read and write
Proceedings paper2012, 42nd European Solid-State Device Research Conference - ESSDERC, 17/09/2012, p.282-285Publication Analysis of vertical cross-point resistive memory (VRRAM) for 3D RRAM design
Proceedings paper2013, 5th IEEE International Memory Workshop - IMW, 26/05/2013, p.155-158Publication Apport du rayonnement synchrotron à l'analyse de réseaux de condensateurs ferroélectriques integers
Oral presentation2004, Journées Couches Ferroelectriques JCFPublication Aqueous chemical solution deposition of ferroelectric Ti4+ cosubstituted (Bi,La)4Ti3O12 thin films
Journal article2007, Chemistry of Materials, (19) 12, p.2994-3001Publication Aqueous chemical solution deposition of Pb(Zr0.53Ti0.47)O3 thin films
Oral presentation2002, 8th International Conference on Ceramic Processing Science - ICCPSPublication Aqueous chemical solution deposition of SrBi2Ta2O9, Pb(Zr,Ti)O3 and (Bi,LA)4Ti3O12 thin films
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