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Browsing by Author "Yamamoto, Kazuhiko"

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    45nm LSTP FET with FUSI gate on PVD-HfO2 with excellent drivability by advanced PDA treatment

    Mitsuhashi, Riichirou
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    Yamamoto, Kazuhiko
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    Hayashi, S.
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    Rothschild, Aude
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    Kubicek, Stefan  
    Journal article
    2005, Microelectronic Engineering, 80, p.7-10
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    High-k dielectrics integration prospects

    Kubicek, Stefan  
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    Van Elshocht, Sven  
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    Delabie, Annelies  
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    Yamamoto, Kazuhiko
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    Beckx, Stephan  
    Proceedings paper
    2005, ULSI Process Integration IV, 15/05/2005, p.169-192
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    Ni-FUSI on high-k as a candidate for 65nm LSTP CMOS

    Kubicek, Stefan  
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    Veloso, Anabela  
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    Kottantharayil, Anil
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    Hayashi, Shigenori
    Proceedings paper
    2005-04, Proceedings IEEE VLSI-TSA International Symposium on VLSI Technology, 25/04/2005, p.99-100
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    Prospect of Hf-based gate dielectric by PVD with FUSI gate for LSTP application

    Niwa, Masaaki
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    Mitsuhashi, Riichirou
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    Yamamoto, Kazuhiko
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    Hayashi, S.
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    Harada, Y.
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    Kubota, M.
    Meeting abstract
    2005, Meeting Abstracts 208th Meeting of the Electrochemical Society, 16/10/2005, p.516
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    PVD-HfSiON gate dielectrics with Ni-FUSI electrode for 65nm LSTP application

    Yamamoto, Kazuhiko
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    Kubicek, Stefan  
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    Rothschild, Aude
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    Mitsuhashi, Riichirou
    ;
    Deweerd, Wim
    Journal article
    2005-06, Microelectronic Engineering, 80, p.198-201
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    The importance of moisture control for EOT scaling of Hf-based dielectrics

    Ragnarsson, Lars-Ake  
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    Brunco, David
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    Yamamoto, Kazuhiko
    ;
    Tokei, Zsolt  
    ;
    Pourtois, Geoffrey  
    Journal article
    2009, Journal of the Electrochemical Society, (156) 6, p.H416-H423

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