Browsing by Author "Yim, Yong Sik"

25% drive current improvement for p-type Multiple Gate FET (MuGFET) devices by the introduction of recessed Si0.8Ge0.2 in the source and drain regions

CMP-less integration of fully Ni-silicided metal gates in FinFETs by simultaneous silicidation of the source, drain, and the gate using a novel dual hard mask approach

GIDL (gate-induced drain leakage) and parasitic Schottky barrier leakage elimination in aggressively scaled HfO2/TiN FiNFET devices

Integration challenges for multi-gate devices

NMOS and PMOS triple gate devices with mid-gap metal gate on oxynitride and Hf based gate dielectrics

Tall triple-gate device with TiN/HfO2 gate stack