Browsing by Author "Yin, Huaxiang"
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Publication A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/AC NBTI Stress/Recovery Condition in Si p-FinFETs
Proceedings paper2021, IEEE International Reliability Physics Symposium (IRPS), MAR 21-24, 2021Publication Alleviation of Negative-Bias Temperature Instability in Si p-FinFETs With ALD W Gate-Filling Metal by Annealing Process Optimization
Journal article2021, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, p.229-235Publication Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal
Publication Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs
Proceedings paper2021, IEEE International Reliability Physics Symposium (IRPS), MAR 21-24, 2021Publication Degradation Mechanism of Short Channel p-FinFETs under Hot Carrier Stress and Constant Voltage Stress
; Yin, HuaxiangProceedings paper2020, IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), JUL 20-23, 2020Publication Impact of ALD TiN capping layer on interface trap and channel hot carrier reliability of HKMG nMOSFETs
; ; Publication Physical mechanism underlying the time exponent shift in the ultra-fast NBTI of high-k/metal gated p-CMOSFETs
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