Browsing by Author "Yoneoka, M."
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Publication 20-MeV alpha ray effects in AlGaAsP p-HEMTs
Proceedings paper2000, Proceedings of the 4th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications, 11/10/2000, p.133-138Publication Carrier lifetime evaluation of electron irradiated SiGe/Si diode
Publication Degradation and recovery of 1.3μm InGaAsP laser diodes irradiated by 1-MeV fast neutrons
Oral presentation1999, IEEE Nuclear and Space Radiation Effects Conference - NSREC 99Publication Degradation of the electrical performance and floating body effects in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation
Oral presentation2005, 24th Electronic Materials Symposium - EMS-24Publication Dose rate dependence of the back gate degradation in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation
Journal article2007, Microelectronic Engineering, (84) 9_10, p.2125-2128Publication Effect of gate interface on performance degration of irradiated SiC-MESFET
Publication Effects of mechanical stress on polycrystalline-silicon resistors
Journal article2002, Thin Solid Films, (406) 1_2, p.195-199Publication Electron irradiation of IGBTs
Oral presentation2004, International Conference Materials for Microelectronics and NanoengineeringPublication Impact of 20-MeV alpha ray irradiation on V-band performance of AlGaAs pseudomorphic HEMTs
Journal article2000, IEEE Trans. Nuclear Science, (47) 6, p.2546-2550Publication Impact of induced lattice defects on performance degradation of AlGaAs/GaAs p-HEMTs
Journal article1999, Physica B, 274, p.1034-1036Publication Impact of neutron irradiation on optical performance of InGaAsP laser diodes
Journal article2000, Thin Solid Films, (364) 1_2, p.259-263Publication Influence of boron implantation dose on the mechanical stress in polycrystalline silicon films
Proceedings paper2000, 3rd International Conference Materials for Microelectronics, 16/10/2000, p.85-88Publication Influence of mechanical stress on the electrical performance of polycrystalline-silicon resistors
; Publication Investigation of the electrical properties of carbon doped Si0.75Ge0.25/Si hetero junction diodes by 2 MeV electron irradiation
Proceedings paper2015, 28th International Conference on Defects in Semiconductors - ICDS, 27/07/2015Publication Mechanical stress of the electrical performance of polycrystalline-silicon resistors
Journal article2001, Journal of Materials Research, (16) 9, p.2579-2582Publication Radiation damage of n-MOSFETs fabricated in a BiCMOS process
Proceedings paper2000, 3rd International Conference Materials for Microelectronics, 16/10/2000, p.107-110Publication Radiation damage of N-MOSFETS fabricated in a BiCMOS process
Journal article2001, Journal of Materials Science: Materials in Electronics, (12) 4_6, p.227-230Publication Radiation damage of Si1-xGex S/D p-MOSFETs with different Ge concentrations
Publication Radiation damages of SiGe devices by electron irradiation and their thermally recovery bahavior
Publication Radiation hardness of electrical properties of n-channel UTBOX SOI by 2 MeV electron irradiation
Oral presentation2015, 28th International Conference on Defects in Semiconductors - ICDS