Browsing by Author "Yoshida, Shinichi"
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Publication Analysis of III-V oxides at high-k / InGaAs interfaces induced by metal electrodes
Journal article2019, Japanese Journal of Applied Physics, (58) 5, p.51010Publication Defect formation in III-V fin grown by aspect ratio trapping technique: a first-principles study
Proceedings paper2014, IEEE International Reliability Physics Symposium - IRPS, 1/06/2014, p.PI.2Publication First-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping
Meeting abstract2014, 226th Meeting of The Electrochemical Society, 5/10/2014, p.1646Publication First-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping
Proceedings paper2014, High Purity and High Mobility Semiconductors 13, 5/10/2014, p.111-123Publication High mobility In0.53Ga0.47As MOSFETs with steep sub-threshold slope achieved by remote reduction of native III-V oxides with metal electrodes
Journal article2017, IEEE Journal of the Electron Devices Society, (5) 6, p.480-484Publication Improvement of InGaAs interface properties by H2O-based La2O3
Meeting abstract2018-12, Semiconductor Interface Specialists Conference - SISC, 5/12/2018Publication Systematic study of interfacial reactions induced by metal electrodes in high-k/InGaAs gate stacks
Journal article2016, Applied Physics Letters, (109) 17, p.172101