Browsing by Author "Young, E."
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Publication Compatibility of polysilicon with HfO2-based gate dielectrics for CMOS applications
Proceedings paper2003, ULSI Process Integration III, 28/04/2003, p.391-396Publication Correlation between the l/f noise parameters and the effective low-field mobility in HfO2 gate dielectric n-channel metal-oxide-semiconductor field-effect transistors
Journal article2004, Applied Physics Letters, (85) 6, p.1057-1059Publication High-k materials for advanced gate stack dielectrics: a comparison of ALCVD and MOCVD as deposition technologies
Proceedings paper2003, CMOS Front-End Materials and Process Technology, 21/04/2003, p.47-58Publication In-line electrical metrology for high-k gate dielectrics deposited by atomic layer chemical vapour deposition
Journal article2002-09, Semiconductor Fabtech, 17, p.111-115Publication Low-frequency noise behavior of SiO2-HfO2 dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness
Journal article2004, IEEE Trans. Electron Devices, (51) 5, p.780-784Publication Low-frequency noise performance of HfO2-based gate stacks
Journal article2005, Journal of the Electrochemical Society, (152) 9, p.F114-F123