Browsing by Author "Zaima, Shigeaki"
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Publication Assessment of Ge1-xSnx alloys for strained Ge CMOS devices
Proceedings paper2010-10, SiGe, Ge, and Related Compounds: Materials, Processing, and Devices, 10/10/2010, p.529-535Publication Band alignment at interfaces of amorphous Al2O3 with Ge1-xSnx-strained Ge-based channels
Journal article2014, Applied Physics Letters, (104) 20, p.202107Publication Defect control for Ge/Si and Ge1-xSnx/Ge/Si heterostructures
Publication Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si
Journal article2018-10, Applied Physics Letters, (113) 19, p.192103Publication Effect of atomic deuterium irradiation on initial growth of Sn and Ge1-xSnx on Ge(001) substrates
Publication Electrical activity of threading dislocations and defect complexes in GeSn epitaxial layers
Proceedings paper2013, 8th International Conference on Silicon Epitaxy and Heterostructures - ICSI-8, 2/06/2013, p.63-64Publication Formation and characterization of Ni(Ge1-ySny)/Ge1-xSnx/Ge contacts
Proceedings paper2010-09, 71st Fall Meeting of the Japan Society of Applied Physics, 14/09/2010Publication Formation of Ni(Ge1-xSnx) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems
Journal article2011, Solid-State Electronics, (60) 1, p.46-52Publication Formation of Ni(Ge1-ySny) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems
Oral presentation2010, Workshop: GeSn Developments and Future ApplicationsPublication Formation of Ni(Ge1-ySny) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems
Meeting abstract2010, 5th International SiGe Technology and Device Meeting - ISTDM, 24/05/2010Publication Ge1-xSnx stressors for strained-Ge CMOS
Meeting abstract2010, 5th International SiGe Technology and Device Meeting - ISTDM, 24/05/2010Publication Ge1-xSnx stressors for strained-Ge CMOS
Journal article2011, Solid-State Electronics, (60) 1, p.53-57Publication GeSn: future applications and strategy
Oral presentation2010, Workshop: GeSn Developments and Future ApplicationsPublication Growth and optical properties of GeSn alloy thin films with a high Sn content
Publication Growth of highly strain-relaxed Ge1-xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method
Publication Heavily doping technology for strained Ge1-xSnx layers
Proceedings paper2010, 71st Fall Meeting of the Japan Society of Applied Physics, 14/09/2010Publication Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects
Journal article2016, Japanese Journal of Applied Physics, (55) 4S, p.04EJ11Publication Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects
Proceedings paper2015, International Conference on Solid State Devices and Materials - SSDM, 27/09/2015, p.G4.4Publication Influence of precursor gas source on defect properties in Si1xGex epitaxial thin films
Meeting abstract2015, Meeting in the Division of Crystals Science and Technology of JSAP (Japan Society of Applied Physics), 29/10/2015Publication Interface and defect control for group IV channel engineering