Browsing by Author "Zhang, J. F."

A discharge-based multi-pulse technique (DMP) for probing electron trap energy distribution in high-k materials for Flash memory applications

A single device based Voltage Step Stress (VSS) technique for fast reliability screening

Defect loss: a new concept for reliability of MOSFETs

Development of a technique for characterizing bias temperature unstability-induced device-to-device variation at SRAM-relevant conditions

Energy distribution of positive charges in Al2O3/GeO2/Ge pMOSFETs

Energy distribution of positive charges in gate dielectric: probing technique and impacts of different defects

Energy distribution of positive charges in high-k dielectric

Hot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM

Interaction between hot carrier aging and PBTI degradation in nMOSFETs: characterization, modelling and lifetime prediction

Interface states beyond band gap and their impact on charge carrier mobility in MOSFETs

Investigation of preexisting and generated defects in nonfilamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution

Key issues and techniques for characterizing time-dependent device-to-device variation of SRAM

Negative bias temperature instability lifetime prediction: problems and solutions

New insights into defect loss, slowdown, and device lifetime enhancement

New insights into defect loss, slowdown, and device lifetime enhancement

Real Vth instability of pMOSFETs under practical operation conditions

Time-dependent variation: A new defect-based prediction methodology

Understanding charge traps for optimizing Si-passivated Ge nMOSFETs