Browsing by Author "Zhang, W."
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Publication A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias
Proceedings paper2015, VLSI Technology Symposium, 15/06/2015, p.T36-T37Publication AC NBTI of Ge pMOSFETs: impact of energy alternating defects on lifetime prediction
Proceedings paper2015, IEEE Symposium on VLSI Technology, 15/06/2015, p.T34-T35Publication An assessment of the mobility degradation induced by remote charge scattering
; ; Journal article2009, Applied Physics Letters, (95) 26, p.263502Publication Defect loss: a new concept for reliability of MOSFETs
Journal article2012, IEEE Electron Device Letters, (33) 4, p.480-482Publication ESD characterization of planar InGaAs devices
Proceedings paper2015, IEEE International Reliability Physics Symposium - IRPS, 19/04/2015, p.3f.1Publication Hot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM
Publication Impact of RTN on pattern recognition accuracy of RRAM-based synaptic neural network
; Journal article2018, IEEE Electron Device Letters, (39) 11, p.1652-1655Publication Instability and defects in gate dielectric: similarity and differences between Hf-stacks and SiO2
Proceedings paper2007, Physics and Technology of High-k Dielectrics, 7/10/2007, p.219-233Publication Interaction between hot carrier aging and PBTI degradation in nMOSFETs: characterization, modelling and lifetime prediction
Publication Key issues and techniques for characterizing time-dependent device-to-device variation of SRAM
; ; Proceedings paper2013, International Electron Devices Meeting - IEDM, 9/12/2013, p.774-777Publication Negative bias temperature instability lifetime prediction: problems and solutions
; Proceedings paper2013, International Electron Devices Meeting - IEDM, 9/12/2013, p.413-416Publication Predictive As-grown-generation (A-G) model for BTI-induced device/circuit level variations in nanoscale technology nodes
Proceedings paper2016, IEEE International Electron Devices Meeting - IEDM, 5/12/2016, p.778-781Publication Time-dependent variation: A new defect-based prediction methodology
; ; ; Proceedings paper2014, IEEE VLSI Technology Symposium, 9/06/2014, p.1-2Publication Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure
; Journal article2013, Microelectronic Engineering, 109, p.43-45Publication Understanding charge traps for optimizing Si-passivated Ge nMOSFETs
Proceedings paper2016, IEEE Symposium on VLSI technology, 13/06/2016, p.32-33