Browsing by Author "Zheng, X.F."
Now showing 1 - 5 of 5
- Results Per Page
- Sort Options
Publication Electron trapping in HfAI0 high-k stack for Flash memory applications: an origin of Vth window closure during cyclling operations
Journal article2011-05, IEEE Transactions on Electron Devices, (58) 5, p.1344-1351Publication Energy and spatial distributions of electron traps throughout Sio2/Al2O3 stacks as the IPD in flash memory application
Journal article2010, IEEE Transactions on Electron Devices, (57) 1, p.288-296Publication Impact of PDA temperature on electron trap energy and spatial distributions in SiO2/Al2O3 stack as the IPD in Flash memory cells
Journal article2009, Microelectronic Engineering, (86) 7_9, p.1834-1837Publication Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure
;Ma, J ;Zhang, J.F. ;Ji, Z. ;Benbakhti, B. ;Duan, M. ;Zhang, W. ;Zheng, X.F.; Journal article2013, Microelectronic Engineering, 109, p.43-45Publication Two-pulse C-V: a new method for characterization electron traps in the bulk of SiO2/high-k dielectric stacks
Journal article2008, IEEE Electron Device Letters, (29) 9, p.1043-1046