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Browsing by Author "Zheng, X.F."

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    Electron trapping in HfAI0 high-k stack for Flash memory applications: an origin of Vth window closure during cyclling operations

    Zheng, X.F.
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    Robinson, Colin
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    Zhang, W.D.
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    Zhang, Jian Fu
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    Govoreanu, Bogdan  
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    Van Houdt, Jan  
    Journal article
    2011-05, IEEE Transactions on Electron Devices, (58) 5, p.1344-1351
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    Energy and spatial distributions of electron traps throughout Sio2/Al2O3 stacks as the IPD in flash memory application

    Zheng, X.F.
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    Zhang, W.D.
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    Govoreanu, Bogdan  
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    Ruiz Aguado, Daniel
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    Zhang, .F.
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    Van Houdt, Jan  
    Journal article
    2010, IEEE Transactions on Electron Devices, (57) 1, p.288-296
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    Impact of PDA temperature on electron trap energy and spatial distributions in SiO2/Al2O3 stack as the IPD in Flash memory cells

    Zheng, X.F.
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    Zhang, W.D.
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    Govoreanu, Bogdan  
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    Zhang, J.F.
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    Van Houdt, Jan  
    Journal article
    2009, Microelectronic Engineering, (86) 7_9, p.1834-1837
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    Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure

    Ma, J
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    Zhang, J.F.
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    Ji, Z.
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    Benbakhti, B.
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    Duan, M.
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    Zhang, W.
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    Zheng, X.F.
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    Mitard, Jerome  
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    Kaczer, Ben  
    Journal article
    2013, Microelectronic Engineering, 109, p.43-45
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    Two-pulse C-V: a new method for characterization electron traps in the bulk of SiO2/high-k dielectric stacks

    Zhang, W.D.
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    Govoreanu, Bogdan  
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    Zheng, X.F.
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    Ruiz Aguado, Daniel
    ;
    Rosmeulen, Maarten  
    Journal article
    2008, IEEE Electron Device Letters, (29) 9, p.1043-1046

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