Browsing by Author "dimoulas, A."
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Publication A deep-level transient spectroscopy study of implanted Ge p+n and n+p junctions by Pt-induced crystallization
Proceedings paper2011, ULSI Process Integration 7, 9/10/2011, p.299-308Publication Active trap determination at the interface of Ge and In0.53Ga0.47As substrates with dielectric layers
;Molle, A. ;Baldovino, S. ;Lamagna, L. ;Spiga, S. ;Lamperti, A. ;Fanciulli, M.Tsoutsou, D.Proceedings paper2011, Physics and Technology of High-k Materials 9, 9/10/2011, p.203-221Publication Characterization of atomic-beam deposited GeO1-xNx/HfO2 stacks on Ge
; ; ; ;Mavrou, G. ;Panayiotatos, Y.dimoulas, A.Meeting abstract2005, Meeting Abstracts 208th ECS Meeting, 16/10/2005Publication Complex admittance analysis for La2Hf2O7/SiO2 high-kappa dielectric stacks
Journal article2004-01, Applied Physics Letters, (84) 2, p.260-262Publication Determining weak Fermi-level pinning in MOS devices by coductance and capacitance analysis and application to GaAs MOS devices
Journal article2007, Solid-State Electronics, (51) 8, p.1101-1108Publication Electron energy band alignment at interfaces of (100)Ge with Gd2O3 and LaHfO
Oral presentation2005, IEEE Semiconductor Interfce Specialists ConferencePublication Germanium FETs and capacitors with rare earth CeO2/HfO2 gates
;dimoulas, A. ;Panayiotatos, Y. ;Sotiropoulos, A. ;Tsipas, P. ;Brunco, DavidNicholas, GarethJournal article2007, Solid-State Electronics, (51) 11_12, p.1508-1514Publication Germanium MOSFETs with CeO2/HfO2/TiN gate stacks
Journal article2007, IEEE Trans. Electron Devices, (54) 6, p.1425-1430Publication HfO2 high-k gate dielectrics on Ge(100) by atomic oxygen beam deposition
;dimoulas, A. ;Mavrou, G. ;Vellianitis, G. ;Evangelou, E. ;Boukos, N.; Journal article2005, Applied Physics Letters, (86) 3, p.32908Publication High quality, large area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy
;Xenogiannopoulou, E. ;Tsipas, P. ;Aretouli, K.E. ;Tsoutsou, D. ;Giamini, S.A.Bazioti, C.Journal article2015, Nanoscale, (7) 17, p.7896-7905Publication Interface engineering for Ge metal-oxide-semiconductor devices
;dimoulas, A. ;Brunco, David ;Ferrari, S. ;Seo, J.W. ;Panayiotatos, Y.Sotiropoulos, A.Journal article2007, Thin Solid Films 515, (515) 16, p.6337-6943Publication Materials and electrical characterization of molecular beam deposited CeO2
;Brunco, David ;dimoulas, A. ;Boukos, N.; ; ; Zhao, ChaoJournal article2007-07, Journal of Applied Physics, (102) 2, p.24104Publication MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement
;Vellianitis, G. ;Apostolopoulos, G. ;Mavrou, G. ;Argyropoulos, K. ;dimoulas, A.Hooker, JacobJournal article2004-06, Materials Science & Engineering B (Solid-State Materials for Advanced, (B109) 1_3, p.85-88Publication Molecular beam epitaxy for advanced gate stack materials and processes
;Locquet, Jean-Pierre ;Marchiori, Chiara ;Sousa, M. ;Siegwart, H. ;Caimi, D.Fompeyrine, JeanOral presentation2005, MRS Spring Meeting Symposium G: Advanced Gate Dielectric Stacks on High-Mobility SemiconductorsPublication MOSFET with La2HfO7 and HfO2 high-k dielectrics integrated in a conventional flow
Oral presentation2005, MRS Spring Meeting Symposium G: Advanced Gate Dielectric Stacks on High-Mobility SemiconductorsPublication Phase-dependent resistance in a superconductor-two-dimensional-electron-gas quasiparticle interferometer
Journal article1995, Phys. Rev. Lett., 74, p.602Publication Short minority carrier response time in HfO2/Ge metal-insulator-semiconductor capacitors
Journal article2005, Microelectronic Engineering, 80, p.34-37Publication Supercurrent transport and quasiparticle interference in a mesoscopic two-dimensional electron gas coupled to superconductors
Journal article1994, Physica B, (203) 3_4, p.285-90Publication Transport through a 2DEG channel with superconducting boundaries
;Nitta, J. ;van Wees, B. J. ;Heida, J. P. ;Klapwijk, T. M. ;dimoulas, A.Van de Graaf, WillemJournal article1996, Surface Science, 361/362, p.320-323