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Browsing by Author "dimoulas, A."

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    A deep-level transient spectroscopy study of implanted Ge p+n and n+p junctions by Pt-induced crystallization

    Simoen, Eddy  
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    Lauwaert, J.
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    Vrielinck, H.
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    Ioannou-Sougleridis, V.
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    dimoulas, A.
    Proceedings paper
    2011, ULSI Process Integration 7, 9/10/2011, p.299-308
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    Active trap determination at the interface of Ge and In0.53Ga0.47As substrates with dielectric layers

    Molle, A.
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    Baldovino, S.
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    Lamagna, L.
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    Spiga, S.
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    Lamperti, A.
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    Fanciulli, M.
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    Tsoutsou, D.
    Proceedings paper
    2011, Physics and Technology of High-k Materials 9, 9/10/2011, p.203-221
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    Characterization of atomic-beam deposited GeO1-xNx/HfO2 stacks on Ge

    Houssa, Michel  
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    Conard, Thierry  
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    Van Steenbergen, Jan  
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    Mavrou, G.
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    Panayiotatos, Y.
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    dimoulas, A.
    Meeting abstract
    2005, Meeting Abstracts 208th ECS Meeting, 16/10/2005
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    Complex admittance analysis for La2Hf2O7/SiO2 high-kappa dielectric stacks

    Apostolopoulos, G.
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    Vellianitis, G.
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    dimoulas, A.
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    Hooker, Jacob
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    Conard, Thierry  
    Journal article
    2004-01, Applied Physics Letters, (84) 2, p.260-262
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    Determining weak Fermi-level pinning in MOS devices by coductance and capacitance analysis and application to GaAs MOS devices

    Martens, Koen  
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    Wang, Wenfei  
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    dimoulas, A.
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    Borghs, Gustaaf  
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    Meuris, Marc  
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    Groeseneken, Guido  
    Journal article
    2007, Solid-State Electronics, (51) 8, p.1101-1108
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    Electron energy band alignment at interfaces of (100)Ge with Gd2O3 and LaHfO

    Afanasiev, Valeri  
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    Shamuilia, Sheron
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    dimoulas, A.
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    Stesmans, Andre  
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    Houssa, Michel  
    Oral presentation
    2005, IEEE Semiconductor Interfce Specialists Conference
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    Germanium FETs and capacitors with rare earth CeO2/HfO2 gates

    dimoulas, A.
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    Panayiotatos, Y.
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    Sotiropoulos, A.
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    Tsipas, P.
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    Brunco, David
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    Nicholas, Gareth
    Journal article
    2007, Solid-State Electronics, (51) 11_12, p.1508-1514
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    Germanium MOSFETs with CeO2/HfO2/TiN gate stacks

    Nicholas, Gareth
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    Brunco, David
    ;
    dimoulas, A.
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    Van Steenbergen, Jan  
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    Bellenger, Florence
    Journal article
    2007, IEEE Trans. Electron Devices, (54) 6, p.1425-1430
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    HfO2 high-k gate dielectrics on Ge(100) by atomic oxygen beam deposition

    dimoulas, A.
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    Mavrou, G.
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    Vellianitis, G.
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    Evangelou, E.
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    Boukos, N.
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    Houssa, Michel  
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    Caymax, Matty  
    Journal article
    2005, Applied Physics Letters, (86) 3, p.32908
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    High quality, large area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy

    Xenogiannopoulou, E.
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    Tsipas, P.
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    Aretouli, K.E.
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    Tsoutsou, D.
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    Giamini, S.A.
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    Bazioti, C.
    Journal article
    2015, Nanoscale, (7) 17, p.7896-7905
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    Interface engineering for Ge metal-oxide-semiconductor devices

    dimoulas, A.
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    Brunco, David
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    Ferrari, S.
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    Seo, J.W.
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    Panayiotatos, Y.
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    Sotiropoulos, A.
    Journal article
    2007, Thin Solid Films 515, (515) 16, p.6337-6943
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    Materials and electrical characterization of molecular beam deposited CeO2

    Brunco, David
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    dimoulas, A.
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    Boukos, N.
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    Houssa, Michel  
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    Conard, Thierry  
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    Martens, Koen  
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    Zhao, Chao
    Journal article
    2007-07, Journal of Applied Physics, (102) 2, p.24104
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    MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement

    Vellianitis, G.
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    Apostolopoulos, G.
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    Mavrou, G.
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    Argyropoulos, K.
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    dimoulas, A.
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    Hooker, Jacob
    Journal article
    2004-06, Materials Science & Engineering B (Solid-State Materials for Advanced, (B109) 1_3, p.85-88
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    Molecular beam epitaxy for advanced gate stack materials and processes

    Locquet, Jean-Pierre
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    Marchiori, Chiara
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    Sousa, M.
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    Siegwart, H.
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    Caimi, D.
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    Fompeyrine, Jean
    Oral presentation
    2005, MRS Spring Meeting Symposium G: Advanced Gate Dielectric Stacks on High-Mobility Semiconductors
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    MOSFET with La2HfO7 and HfO2 high-k dielectrics integrated in a conventional flow

    Pantisano, Luigi
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    Conard, Thierry  
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    Claes, Martine  
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    Demand, Marc  
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    Deweerd, Wim
    ;
    De Gendt, Stefan  
    Oral presentation
    2005, MRS Spring Meeting Symposium G: Advanced Gate Dielectric Stacks on High-Mobility Semiconductors
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    Phase-dependent resistance in a superconductor-two-dimensional-electron-gas quasiparticle interferometer

    dimoulas, A.
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    Heida, J. P.
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    van Wees, B. J.
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    Klapwijk, T. M.
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    Van de Graaf, Willem
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    Borghs, Gustaaf  
    Journal article
    1995, Phys. Rev. Lett., 74, p.602
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    Short minority carrier response time in HfO2/Ge metal-insulator-semiconductor capacitors

    dimoulas, A.
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    Vellianitis, G.
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    Mavrou, G.
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    Evengelou, E.
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    Argyropoulos, K.
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    Houssa, Michel  
    Journal article
    2005, Microelectronic Engineering, 80, p.34-37
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    Supercurrent transport and quasiparticle interference in a mesoscopic two-dimensional electron gas coupled to superconductors

    van Wees, B. J.
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    dimoulas, A.
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    Heida, J. P.
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    Klapwijk, T. M.
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    Van de Graaf, Willem
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    Borghs, Gustaaf  
    Journal article
    1994, Physica B, (203) 3_4, p.285-90
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    Transport through a 2DEG channel with superconducting boundaries

    Nitta, J.
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    van Wees, B. J.
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    Heida, J. P.
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    Klapwijk, T. M.
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    dimoulas, A.
    ;
    Van de Graaf, Willem
    Journal article
    1996, Surface Science, 361/362, p.320-323

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