Browsing by author "Claeys, C."
Now showing items 1-20 of 92
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60 MeV proton irradiation effects on NO-annealed and standard-oxide deep submicron MOSFETs
Simoen, Eddy; Hermans, Jan; Vereecken, Wim; Vermoere, Carl; Claeys, C.; Augendre, Emmanuel; Badenes, Gonçal; Mohammadzadeh, A. (2001) -
A Low-Frequency Noise Study of Hot-Carrier Stressing Effects in Submicron Si p-MOSFETs
Vasina, Petr; Sikula, J.; Simoen, Eddy; Claeys, C. (1995) -
A new method to extract the silicon film thickness of enhancement mode fully depleted SOI nMOSFETs at 300K
Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, C. (2000) -
A new technique to extract the oxide charge density at front and back interfaces of SOI NMOSFETs devices
Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, C. (2001) -
Analysis of irradiation induced defects in silicon devices
Vegh, Gerzson; Simoen, Eddy; Vanhellemont, Jan; Claeys, C. (1995) -
Analysis of the back gate voltage on the LDD SOI NMOSFET series resistance
Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, C. (1999) -
Assessment of radiation induced lattice damage in shallow trench isolation diodes irradiated by neutrons
Kobayashi, K.; Ohyama, Hidenori; Hayama, Kiyoteru; Takami, Y.; Simoen, Eddy; Poyai, Amporn; Claeys, C. (2000) -
Back gate voltage influence on the LDD SOI NMOSFET series resistance extraction from 150 to 300 K
Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, C. (1998) -
Back gate voltage influence on the LDD SOI NMOSFET series resistance extraction from 150 to 300 K
Nicolett, A. S.; Martino, Joao Antonio; Simoen, Eddy; Claeys, C. (2000) -
Bulk defect induced low-frequency noise in n+-p silicon diodes
Hou, F. C.; Bosman, Gijs; Simoen, Eddy; Vanhellemont, Jan; Claeys, C. (1998) -
Carbon enhancement of SiO2 nucleation in buried oxide synthesis
Efremov, A. A.; Litovchenko, V. G.; Romanova, G. P.; Sarikov, A. V.; Claeys, C. (2001) -
Characterisation of high-energy proton irradiation induced recombination centers in silicon
Kaniava, Arvydas; Vanhellemont, Jan; Simoen, Eddy; Claeys, C.; Gaubas, Eugenijus (1996) -
Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM
De Gryse, O.; Clauws, P.; Lebedev, O.; Van Landuyt, J.; Vanhellemont, Jan; Claeys, C.; Simoen, Eddy (2001) -
Comparison of the freeze-out effect in In and B doped n-MOSFETs in the range 4.2 - 300 K
Alawneh, Isam; Simoen, Eddy; Biesemans, Serge; De Meyer, Kristin; Claeys, C. (1998) -
Comparison of the total dose and 60MeV proton-irradiation response of CMOS transistors operated at 4.2K
Simoen, Eddy; Claeys, C.; Mohammadzadeh, A. (1999) -
Correlation between the low-frequency noise spectral density and the static device parameters of silicon-on-insulator MOSFET's
Simoen, Eddy; Claeys, C. (1995) -
Critical study of the saturation drain voltage and the multiplication current in MOSFETs at liquid helium temperature
Simoen, Eddy; Claeys, C. (2001) -
Current transients in almost-ideal Czochralski silicon p-n junction diodes
Poyai, Amporn; Simoen, Eddy; Claeys, C. (1999) -
DC and Noise Behaviour of Short-Chanenl SOI MOSFETs
Valenza, M.; Barros, C.; Simoen, Eddy; Claeys, C.; van Dinther, Cees (1995) -
Defect analysis of n-type silicon strained layers
Simoen, Eddy; Loo, Roger; Roussel, Philippe; Caymax, Matty; Bender, Hugo; Claeys, C.; Herzog, H. J.; Blondeel, A.; Clauws, P. (2000)