Browsing by author "Rossetto, Isabella"
Now showing items 1-12 of 12
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Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry
Meneghini, Matteo; Rossetto, Isabella; Borga, Matteo; Canato, Eleonora; De Santi, Carlo; Rampazzo, Fabiana; Meneghesso, Gaudenzio; Zanoni, Enrico; Stoffels, Steve; Van Hove, Marleen; Posthuma, Niels; Decoutere, Stefaan (2017) -
Evidence of hot-electron degradation in GaN-based MIS-HEMTs submitted to high temperature constant source current stress
Ruzzarin, Maria; Meneghini, Matteo; Rossetto, Isabella; Van Hove, Marleen; Stoffels, Steve; Wu, Tian-Li; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2016) -
Evidence of time-dependent vertical breakdown in GaN-on-Si HEMTs
Borga, Matteo; Meneghini, Matteo; Rossetto, Isabella; Stoffels, Steve; Posthuma, Niels; Van Hove, Marleen; Marcon, Denis; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2017) -
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: dependence on Mg-doping level
Rossetto, Isabella; Meneghini, Matteo; Canato, E.; Barbato, M.; Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan; Tallarico, Andrea; Meneghesso, Gaudenzio; Zanoni, Enrico (2017) -
Gate stability of GaN-based HEMTs with p-type gate
Meneghini, Matteo; Rossetto, Isabella; Rizzato, Vanessa; Stoffels, Steve; Van Hove, Marleen; Posthuma, Niels; Wu, Tian-Li; Marcon, Denis; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2016) -
Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs
Rossetto, Isabella; Meneghini, Matteo; Bisi, Davide; Barbato, A; Van Hove, Marleen; Marcon, Denis; Wu, Tian-Li; Decoutere, Stefaan; Meneghesso, Gaudio; Zanoni, Enrico (2015) -
Negative bias-induced threshold voltage instability (NBTI) in GaN-on-Si power HEMTs
Meneghini, Matteo; Rossetto, Isabella; Bisi, Davide; Ruzzarin, Maria; Van Hove, Marleen; Stoffels, Steve; Wu, Tian-Li; Marcon, Denis; Decoutere, Stefaan; Meneghesso, Gaudio; Zanoni, Enrico (2016) -
Normally-off HEMTs with p-GaN gate: stability and lifetime extrapolation
Meneghesso, Gaudenzio; Meneghini, Matteo; Rossetto, Isabella; Rizzato, Vanessa; Stoffels, Steve; Van Hove, Marleen; Wu, Tian-Li; You, Shuzhen; Posthuma, Niels; Decoutere, Stefaan; Zanoni, Enrico (2016) -
Reliability and parasitic issues in GaN-based power HEMTs
Meneghesso, Gaudenzio; Meneghini, Matteo; Rossetto, Isabella; Bisi, Davide; Stoffels, Steve; Van Hove, Marleen; Decoutere, Stefaan; Zanoni, Enrico (2016) -
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis
Rossetto, Isabella; Meneghini, Matteo; Rizzato, Vanessa; Ruzzarin, Maria; Favaron, Andrea; Stoffels, Steve; Van Hove, Marleen; Posthuma, Niels; Wu, Tian-Li; Marcon, Denis; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2016) -
Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests
Hu, Jie; Stoffels, Steve; Zhao, Ming; Tallarico, Andrea Natale; Rossetto, Isabella; Meneghini, Matteo; Kang, Xuanwu; Bakeroot, Benoit; Kaczer, Ben; Decoutere, Stefaan; Groeseneken, Guido (2017) -
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
Meneghesso, Gaudenzio; Meneghini, Matteo; Bisi, Davide; Rossetto, Isabella; Wu, Tian-Li; Van Hove, Marleen; Marcon, Denis; Stoffels, Steve; Decoutere, Stefaan; Zanoni, Enrico (2016)