Browsing by author "Tsunoda, I."
Now showing items 1-12 of 12
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Carrier lifetime evaluation of electron irradiated SiGe/Si diode
Idemoto, T.; Ohyama, H.; Takakura, K.; Tsunoda, I.; Yoneoka, M.; Nakashima, T.; Bargallo Gonzalez, Mireia; Simoen, Eddy; Claeys, Cor (2010) -
Evaluation of electron irradiated embedded SiGe source/drain diodes by Raman spectroscopy
Ohyama, Hidenori; Naka, N.; Takakura, K.; Tsunoda, I.; Bargallo Gonzalez, Mireia; Simoen, Eddy; Claeys, Cor (2011) -
Evaluation of electron irradiated embedded SiGe source/drain diodes by Raman spectroscopy
Oyhama, Hidenori; Naka, N.; Takakura, K.; Tsunoda, I.; Londos, C.A; Bargallo Gonzalez, Mireia; Simoen, Eddy; Claeys, Cor (2010) -
Evaluation of electron irradiated SiGe/Si diodes by Raman spectroscopy
Tsunoda, I.; Naka, N.; Takakura, K.; Bargallo Gonzalez, Mireia; Simoen, Eddy; Claeys, Cor; Ohyama, Hidenori (2010) -
Investigation of the electrical properties of carbon doped Si0.75Ge0.25/Si hetero junction diodes by 2 MeV electron irradiation
Takakura, Kenichiro; Ogata, H.; Inoue, T.; Yoneoka, M.; Tsunoda, I.; Simoen, Eddy; Claeys, Cor (2015) -
Investigation of the Si doping effect in b-Ga2O3 films by co-sputtering of gallium oxide and Si
Takakura, K.; Funasaki, S.; Tsunoda, I.; Ohyama, H.; Takeuchi, D.; Nakashima, T.; Shibuya, M.; Murakami, K.; Simoen, Eddy; Claeys, Cor (2012) -
Radiation damage of Si1-xGex S/D p-MOSFETs with different Ge concentrations
Nakashima, T.; Idemoto, T.; Tsunoda, I.; Takakura, K.; Yoneoka, M.; Ohyama, H.; Yoshino, K.; Bargallo Gonzalez, Mireia; Simoen, Eddy; Claeys, Cor (2012) -
Radiation damages of SiGe devices by electron irradiation and their thermally recovery bahavior
Nakashima, T.; Idemoto, T.; Takakura, K.; Tsunoda, I.; Yoneoka, M.; Ohyama, H.; Yoshino, K.; Bargallo Gonzalez, Mireia; Simoen, Eddy; Eneman, Geert; Claeys, Cor (2010) -
Radiation hardness of electrical properties of n-channel UTBOX SOI by 2 MeV electron irradiation
Takakura, Kenichiro; Goto, T.; Yoneoka, M.; Tsunoda, I.; Simoen, Eddy; Claeys, Cor (2015) -
Radiation influence on the electrical properties of n-channel UTBOX SOI GAAFETs by 2 MeV electron irradiation
Iseri, K.; Takakura, Kenichiro; Yoneoka, M.; Tsunoda, I.; Simoen, Eddy; Veloso, Anabela; Claeys, Cor (2017) -
Strain evaluation of electron irradiated SiGe/Si diodes by Raman spectroscopy
Naka, N.; Ohyama, H.; Tsunoda, I.; Takakura, K.; Bargallo Gonzalez, Mireia; Simoen, Eddy; Claeys, Cor (2010) -
Study of degradation mechanism by isothermal annealing of SOI FinFET after electron irradiation
Matsuki, K.; Matsuzaki, M.; Yoneoka, M.; Tsunoda, I.; Takakura, Kenichiro; Simoen, Eddy; Veloso, Anabela; Claeys, Cor (2017)