Browsing by author "Agopian, P.G.D."
Now showing items 1-20 of 29
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Analog performance of 60 MeV proton-irradiated SOI MuGFETs with different strain technologies
Agopian, P.G.D.; Martino, J.A.; Kobayashi, Daisuke; Poizat, M.; Simoen, Eddy; Claeys, Cor (2011) -
Analysis of the transistor efficiency of gas phase Zn diffusion In0.53Ga0.47As nTFETs at different temperatures
Bordallo, Caio; Martino, J.A.; Agopian, P.G.D.; Alian, AliReza; Mols, Yves; Rooyackers, Rita; Vandooren, Anne; Verhulst, Anne; Simoen, Eddy; Claeys, Cor; Collaert, Nadine (2017) -
Back bias influence on analog performance of pTFET
Agopian, P.G.D.; Neves, F.S.; Martino, J.A.; Vandooren, Anne; Rooyackers, Rita; Simoen, Eddy; Claeys, Cor (2013) -
Biaxial + uniaxial stress effectiveness in tri-gate SOI nMOSFETs with vaiable fin dimensions
Bühler, R.T.; Agopian, P.G.D.; Simoen, Eddy; Claeys, Cor; Martino, J.A. (2012) -
Biaxial stress simulation and electrical characterization of triple-gate SOI nMOSFETs
Bühler, R.T.; Agopian, P.G.D.; Simoen, Eddy; Claeys, Cor; Martino, J.A. (2012) -
Comparison between vertical silicon NW-TFET and NW-MOSFET from analog point of view
Agopian, P.G.D.; Martino, J.A.; Vandooren, Anne; Rooyackers, Rita; Simoen, Eddy; Thean, Aaron; Claeys, Cor (2015) -
Comparison of current mirrors designed with TFET and FinFET devices for different dimensions and temperatures
Martino, M.D.V.; Martino, J.A.; Agopian, P.G.D.; Vandooren, Anne; Rooyackers, Rita; Simoen, Eddy; Thean, Aaron; Claeys, Cor (2015) -
DIBL performance of 60 MeV proton-irradiated SOI MuGFETs
Agopian, P.G.D.; Martino, J.A.; Kobayashi, D.; Poizat, M.; Simoen, Eddy; Claeys, Cor (2010) -
Experimental analog performance of pTFETs as a function of temperature
Agopian, P.G.D.; Martino, M.D.V.; Martino, J.A.; Rooyackers, Rita; Leonelli, Daniele; Claeys, Cor (2012) -
Experimental comparison between relaxed and strained Ge pFinFETs
Oliveira, Alberto; Agopian, P.G.D.; Martino, Joao A.; Simoen, Eddy; Mitard, Jerome; Witters, Liesbeth; Collaert, Nadine; Claeys, Cor (2017) -
Fin shape influence on the analog performance of standard and trained MuGFETs
Bühler, R.T.; Martino, J.A.; Agopian, P.G.D.; Giacomini, R.; Simoen, Eddy; Claeys, Cor (2010) -
Global and/or local strain influence on p and n MuGFET analog performance
Agopian, P.G.D.; Martino, J.A.; Simoen, Eddy; Claeys, Cor (2011) -
Ground Plane Impact on the Threshold Voltage of Relaxed Ge pFinFETs
Goncalves, G.V.; Oliveira, A.V.; Agopian, P.G.D.; Martino, J.A.; Witters, Liesbeth; Mitard, Jerome; Collaert, Nadine; Claeys, Cor; Simoen, Eddy (2018) -
High temperature influence on analog parameters of bulk and SOI nFinFETs
Oliveira, A.V.; Agopian, P.G.D.; Martino, J.A.; Simoen, Eddy; Claeys, Cor (2015) -
Impact of gate stack dielectric on intrinsic voltage gain and low frequency noise in Ge pMOSFETs
Oliveira, A.V.; Agopian, P.G.D.; Martino, J.A.; Fang, Wen; Arimura, Hiroaki; Mitard, Jerome; Mertens, Hans; Simoen, Eddy; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; Claeys, Cor (2015) -
Impact of proton irradiation on strained triple gate SOI p- and n-MOSFETs
Agopian, P.G.D.; Martino, J.A.; Koboyashi, D.; Simoen, Eddy; Claeys, Cor (2011) -
Low temperature performance of proton irradiated strained SOI FinFET
Caparroz, L.F.V.; Bordallo, C.C.M.; Martino, J.A.; Simoen, Eddy; Claeys, Cor; Agopian, P.G.D. (2017) -
Radiation hardness aspects of advanced FinFET and UTBOX devices
Claeys, Cor; Aoulaiche, Marc; Simoen, Eddy; Griffoni, Alessio; Kobayashi, D.; Mahatme, N.N.; Reed, R.A.; Schrimpf, R.D.; Agopian, P.G.D.; Martino, J.A. (2012) -
SEG and fin dimensions influence on biaxial stress effectiveness in tri-gate SOI nMOSFETs
Bühler, R.T.; Agopian, P.G.D.; Simoen, Eddy; Claeys, Cor; Martino, J.A. (2012) -
SEG and uniaxial strain influence on FinFET performance at low temperature
Agopian, P.G.D.; Pacheco, V.H.; Martino, J.A.; Simoen, Eddy; Claeys, Cor (2010)