Browsing by author "Fahrner, W.R."
Now showing items 1-12 of 12
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A low temperature technology on the base of hydrogen enhanced thermal donor formation for future high voltage applications
Job, R.; Ulyashin, A.G.; Fahrner, W.R.; Niedernostheide, F.J.; Schulze, H. J.; Simoen, Eddy; Claeys, Cor; Tonelli, G. (2002) -
Analysis of oxygen thermal donor formation in n-type CZ silicon
Rafi, Joan Marc; Simoen, Eddy; Claeys, Cor; Ulyashin, A.G.; Job, R.; Fahrner, W.R.; Versluys, J.; Clauws, P.; Lozano, M.; Campabadal, F. (2003) -
Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step
Simoen, Eddy; Claeys, Cor; Job, R.; Ulyashin, A.G.; Fahrner, W.R.; Tonelli, G.; De Gryse, O.; Clauws, P. (2003) -
DLTS study on deep levels formed in plasma hydrogenated and subsequently annealed silicon
Huang, Y.L.; Simoen, Eddy; Claeys, Cor; Job, R.; Ma, Y.; Düngen, W.; Fahrner, W.R.; Versluys, J.; Clauws, P. (2005) -
Doping of oxidized float zone silicon by thermal donors- a low thermal budget doping method for device applications?
Job, R.; Ulyashin, A.G.; Huang, Y.L.; Fahrner, W.R.; Simoen, Eddy; Claeys, Cor; Niedernostheide, F.-J.; Schulze, H.-J.; Tonelli, G. (2002) -
Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon
Simoen, Eddy; Claeys, Cor; Job, R.; Ulyashin, A.G.; Fahrner, W.R.; De Gryse, O.; Clauws, P. (2002) -
Hydrogen-induced thermal donor formation in n-type oxygenated high-resistivity FZ silicon
Rafi, Joan Marc; Simoen, Eddy; Claeys, Cor; Ulyashin, A.G.; Job, R.; Fahrner, W.R.; Versluys, J.; Clauws, P.; Lozano, M.; Martinez, C.; Campabadal, F. (2002) -
Hydrogen-plasma-enhanced thermal donor formation in n-type high-ressitivity MCZ silicon
Simoen, Eddy; Huang, Y.L.; Claeys, Cor; Rafi, J.M.; Job, R.; Fahrner, W.R.; Versluijs, Janko; Clauws, P. (2005) -
Low temperature doping of silicon by hydrogen plasma treatments
Job, R.; Ulyashin, A.G.; Ma, Y.; Fahrner, W.R.; Simoen, Eddy; Rafi, Joan Marc; Claeys, Cor; Niedernostheide, F.J.; Schulze, H.J. (2002) -
Modification of the effective minority carrier lifetime of silicon substrates by heat treatment and/or hydrogenation
Ulyashin, A.G.; Scherff, M.; Job, R.; Fahrner, W.R.; Bilyalov, Renat; Poortmans, Jef; Abrosimov, N.; Riemann, H. (2003) -
P-N junction diode fabricated based on donor formation in plasma hydrogenated P-type czochralski silicon
Huang, Y.L.; Job, R.; Simoen, Eddy; Claeys, Cor; Ma, Y.; Dungen, W.; Fahrner, W.R.; Versluijs, Janko; Clauws, P. (2005) -
The lower boundary of the hydrogen concentration required for enhancing oxygen diffusion and thermal donor formation in Czochralski silicon
Huang, Y.L.; Ma, Y.; Job, R.; Fahrner, W.R.; Simoen, Eddy; Claeys, Cor (2005)