Browsing by author "Decoutere, Stefaan"
Now showing items 81-100 of 433
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Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs
Modolo, N.; Fregolent, M.; Masin, F.; Benato, A.; Bettini, A.; Buffolo, M.; De Santi, C.; Borga, Matteo; Posthuma, Niels; Bakeroot, Benoit; Decoutere, Stefaan; Vogrig, D.; Neviani, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022) -
CBC8: A 0.25μm SiGe BiCMOS technology platform on thick-film SOI for high-performance analog and RF IC design
Babcock, Jeff; Cestra, Greg; van Noort, Wibo; Allard, Paul; Ruby, Scott; Tao, Jon; Malone, Robert; Decoutere, Stefaan (2010) -
Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization
Mukherjee, Kalparupa; De Santi, Carlo; Borga, Matteo; Geens, Karen; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; Diehle, Patrick; Huebner, Susanne; Altmann, Frank; Buffolo, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2021) -
Challenges in the packaging of GaN-on-si devices
La Manna, Antonio; Limaye, Paresh; Decoutere, Stefaan; Beyne, Eric (2011-03) -
Characterization, modeling, and optimization of FinFET MOS varactors
Dehan, Morin; Parvais, Bertrand; Subramanian, Vaidy; Gustin, Cedric; Loo, Josine; Mercha, Abdelkarim; Decoutere, Stefaan (2007-01) -
Class 3 HBM and class C MM ESD protected 5.5 GHz LNA in 90 nm RF CMOS using above-IC inductors
Thijs, Steven; Linten, Dimitri; Mahadeva Iyer, Natarajan; Jeamsaksiri,; Mercha, Abdelkarim; Ramos, Javier; Sun, Xiao; Carchon, Geert; Soussan, Philippe; Wambacq, Piet; Decoutere, Stefaan; Groeseneken, Guido (2005) -
Closed form inductance calculation for integrated spiral inductor compact modeling
Jenei, Snezana; Nauwelaers, Bart; Decoutere, Stefaan; Naem, Abdalla (2000) -
CMOS process-compatible 200mm polycrystalline AlN substrates for GaN power transistors
Geens, Karen; Van Hove, Marleen; Li, Xiangdong; Zhao, Ming; atka, Alexander; Vincze, Andrej; Decoutere, Stefaan (2017) -
CMOS-compatible high-power low-leakage AlGaN/GaN MISHEMT on silicon substrate
Van Hove, Marleen; Boulay, Sanae; Bahl, Sandeep; Stoffels, Steve; Kang, Xuanwu; Wellekens, Dirk; Geens, Karen; Delabie, Annelies; Decoutere, Stefaan (2012) -
CMOS-integrated poly-SiGe cantilevers with read/write system for probe storage device
Severi, Simone; Heck, J.; Chou, T.K.A.; Belov, N.; Park, J.S.; Harrar, D.; Jain, A.; Van Hoof, Rita; Du Bois, Bert; De Coster, Jeroen; Varela Pedreira, Olalla; Willegems, Myriam; Vaes, Jan; Jamieson, Geraldine; Haspeslagh, Luc; Adams, D.; Rao, V.; Decoutere, Stefaan; Witvrouw, Ann (2009) -
Combined PEALD gate-dielectric and in-situ SiN cap-layer for reduced Vth shift and RDS-ON dispersion of AlGaN/GaN HEMTs on 200 mm Si wafer
Ronchi, Nicolo; De Jaeger, Brice; Van Hove, Marleen; Roelofs, Robin; Wu, Tian-Li; Hu, Jie; Kang, Xuanwu; Decoutere, Stefaan (2014) -
Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN
Ronchi, Nicolo; De Jaeger, Brice; Van Hove, Marleen; Roelofs, Robin; Wu, Tian-Li; Hu, Jie; Kang, Xuanwu; Decoutere, Stefaan (2015) -
Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices
Modolo, N.; De Santi, C.; Baratella, Giulio; Bettini, A.; Borga, Matteo; Posthuma, Niels; Bakeroot, Benoit; You, Shuzhen; Decoutere, Stefaan; Bevilaqua, A.; Neviani, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022) -
Comparison of a novel FSA and a QSA SiGe:C architecture for reverse operation
Sibaja-Hernandez, Arturo; Van Huylenbroeck, Stefaan; Venegas, Rafael; Donkers, Johan; Kramer, Mark; Decoutere, Stefaan (2008) -
Comparison of AlGaN/GaN MISHEMT powerbar designs
Stoffels, Steve; Ronchi, Nicolo; Venegas, Rafael; De Jaeger, Brice; Marcon, Denis; Decoutere, Stefaan (2013-08) -
Comparison of AlGaN/GaN MISHEMT powerbar designs
Stoffels, Steve; Ronchi, Nicolo; Venegas, Rafael; De Jaeger, Brice; Marcon, Denis; Decoutere, Stefaan (2014-02) -
Comprehensive investigation of on-state stress on D-mode AlGaN/GaN MIS-HEMTs
Wu, Tian-Li; Marcon, Denis; Zahid, Mohammed; Van Hove, Marleen; Decoutere, Stefaan; Groeseneken, Guido (2013) -
Comprehensive study of TSUPREM4 boron diffusion modeling in SiGeC base layers under critical RTA conditions
Sibaja-Hernandez, Arturo; Xu, Mingwei; Decoutere, Stefaan; Maes, Herman (2004-05) -
Correlating Structural and Electrical Characteristics of Threading Dislocations in GaN-on-Si Heterostructures and p-n Diodes by Multiple Microscopy Techniques
Minj, Albert; Geens, Karen; Liang, Hu; Han, Han; Noel, Celine; Bakeroot, Benoit; Paredis, Kristof; Zhao, Ming; Hantschel, Thomas; Decoutere, Stefaan (2023) -
Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
Wu, Tian-Li; Marcon, Denis; Bakeroot, Benoit; De Jaeger, Brice; Lin, Dennis; Franco, Jacopo; Stoffels, Steve; Van Hove, Marleen; Groeseneken, Guido; Decoutere, Stefaan (2015)