Browsing by author "Decoutere, Stefaan"
Now showing items 61-80 of 433
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Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics
Wu, Tian-Li; Marcon, Denis; Ronchi, Nicolo; Bakeroot, Benoit; You, Shuzhen; Stoffels, Steve; Van Hove, Marleen; Bisi, Davide; Meneghini, Matteo; Groeseneken, Guido; Decoutere, Stefaan (2015) -
Analysis of the FinFET parasitics for improved RF performances
Parvais, Bertrand; Dehan, Morin; Subramanian, Vaidy; Mercha, Abdelkarim; Tamer San, Kemal; Jurczak, Gosia; Groeseneken, Guido; Sansen, Willy; Decoutere, Stefaan (2007-10) -
Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures
Wu, Tian-Li; Bakeroot, Benoit; Liang, Hu; Posthuma, Niels; You, Shuzhen; Ronchi, Nicolo; Stoffels, Steve; Marcon, Denis; Decoutere, Stefaan (2017) -
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
Mukherjee, Kalparupa; Borga, Matteo; Ruzzarin, Maria; De Santi, Carlo; Stoffels, Steve; You, Shuzhen; Geens, Karen; Liang, Hu; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2020) -
Analysis, modeling and optimization of integrated passive components with RF capabilities in CMOS and BiCMOS technologies
Jenei, Snezana; Nauwelaers, Bart; Decoutere, Stefaan; Kuhn, Rudiger (2000) -
Analytical extraction of small and large signal models for FINFET varactors
Crupi, G.; Schreurs, Dominique; Dehan, Morin; Xiao, Dongping; Caddemi, Alina; Mercha, Abdelkarim; Decoutere, Stefaan (2008) -
Analytical model for the threshold voltage of p-(Al)GaN high-electron-mobility transistors
Bakeroot, Benoit; Stockman, Arno; Posthuma, Niels; Stoffels, Steve; Decoutere, Stefaan (2018) -
Application of scanning spreading resistance microscopy (SSRM) for GaN-on-silicon power structures
Kandaswamy, Prem Kumar; Saripalli, Yoga; Van Hove, Marleen; You, Shuzhen; Zhao, Ming; Liang, Hu; Vanhaeren, Danielle; Vanderheyden, Annelies; Schulze, Andreas; Eyben, Pierre; Decoutere, Stefaan; Langer, Robert; Vandervorst, Wilfried (2014) -
Architecture choice for radiation-hard AlGaN/GaN HEMT power devices
Wellekens, Dirk; Stoffels, Steve; Luu, Aurore; Haussy, Magali; Mélotte, Michel; Agten, Dries; Decoutere, Stefaan (2017) -
Arsenic-doped Ge-spiked monoemitter SiGe:C HBTs by means of low-temperature trisilane based epitaxy
You, Shuzhen; Decoutere, Stefaan; Nguyen, Duy; Van Huylenbroeck, Stefaan; Sibaja-Hernandez, Arturo; Venegas, Rafael; Loo, Roger; De Meyer, Kristin (2011) -
Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor deposition
You, Shuzhen; Decoutere, Stefaan; Nguyen, Duy; Van Huylenbroeck, Stefaan; Sibaja-Hernandez, Arturo; Venegas, Rafael; Loo, Roger; De Meyer, Kristin (2012) -
Assessment of GaN-on-Si HEMTs for 50V-2GHz RF applications: impact of the RF loss at the buffer/Si interface on the device performance
Marcon, Denis; Viaene, John; Stoffels, Steve; Vanaverbeke, Fre; Kang, Xuanwu; Lenci, Silvia; Srivastava, Puneet; Decoutere, Stefaan (2012) -
Assessment of N-type and P-type doping in (Al,Ga)N heterostructures by Scanning probe microscopy techniques
Minj, Albert; Zhao, Ming; Bakeroot, Benoit; Paredis, Kristof; Wouters, Lennaert; Hantschel, Thomas; Decoutere, Stefaan (2021) -
Au-free AlGaN/GaN power diode on 8 in Si substrate with gated edge termination
Lenci, Silvia; De Jaeger, Brice; Carbonell, Laure; Hu, Jie; Mannaert, Geert; Wellekens, Dirk; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan (2013) -
Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200 mm Si substrates
De Jaeger, Brice; Van Hove, Marleen; Wellekens, Dirk; Kang, Xuanwu; Liang, Hu; Mannaert, Geert; Geens, Karen; Decoutere, Stefaan (2012) -
Au-free low temperature ohmic contacts for AlGaN/GaN power devices on 200 mm substrates
Firrincieli, Andrea; De Jaeger, Brice; You, Shuzhen; Wellekens, Dirk; Van Hove, Marleen; Decoutere, Stefaan (2013-09) -
Au-free ohmic contacts for AlGaN/GaN power devices on 200 mm Si substrates
Firrincieli, Andrea; De Jaeger, Brice; You, Shuzhen; Wellekens, Dirk; Van Hove, Marleen; Decoutere, Stefaan (2014) -
Au-free, high-breakdown AlGaN/GaN MISHEMTs with low leakage, high yield and robust TDDB characteristics
Lenci, Silvia; Kang, Xuanwu; Wellekens, Dirk; Van Hove, Marleen; Boulay, Sanae; Stoffels, Steve; Geens, Karen; Zahid, Mohammed; Decoutere, Stefaan (2012) -
Breakdown investigation in GaN-based MIS-HEMT devices
Marino, Fabio; Bisi, Davide; Meneghini, Matteo; Verzellesi, Giovanni; Zanoni, Enrico; Van Hove, Marleen; You, Shuzhen; Decoutere, Stefaan; Marcon, Denis; Stoffels, Steve; Ronchi, Nicolo; Meneghesso, Gaudio (2014) -
Buffer vertical leakage mechanism and reliability of 200-mm GaN-on-SOI
Li, Xiangdong; Zhao, Ming; Bakeroot, Benoit; Geens, Karen; Guo, Weiming; Lempinen, Vesa-Pekka; Sormunen, Jaakko; Groeseneken, Guido; Decoutere, Stefaan (2019)