Browsing by author "Zhao, C.Z."

Analysis of the kinetics for interface state generation following hole injection

Zhang, J.F; Zhao, C.Z.; Groeseneken, Guido; Degraeve, Robin (2003)

Hole trap generation in gate dielectric during substrate hole injection

Zhang, J.F.; Sii, H.K.; Chen, A.H.; Zhao, C.Z.; Uren, M.J.; Groeseneken, Guido; Degraeve, Robin (2004)

Hole traps in silicon dioxides - Part I: Properties

Zhang, J.F.; Zhao, C.Z.; Chen, A.H.; Groeseneken, Guido; Degraeve, Robin (2004-08)

Hole traps in silicon dioxides - Part II: Generation mechanism

Zhao, C.Z.; Zhang, J.F.; Groeseneken, Guido; Degraeve, Robin (2004-08)

Hydrogen induced and plasma charging enhanced positive charge generation in gate oxides

Zhao, C.Z.; Zhang, J.F.; Groeseneken, Guido; Degraeve, Robin; Ellis, J. N.; Beech, C. D. (2000)

Hydrogen induced positive charge generation in gate oxides

Zhang, J.F.; Zhao, C.Z.; Groeseneken, Guido; Degraeve, Robin; Ellis, J. N.; Beech, C. D. (2001)

Hydrogen induced positive charge in Hf-based dielectrics

Zhao, C.Z.; Zhang, J.F.; Zahid, Mohammed; Efthymiou, E.; Lu, Y.; Hall, S.; Peaker, A.R.; Groeseneken, Guido; Pantisano, Luigi; Degraeve, Robin; De Gendt, Stefan; Heyns, Marc (2007)

Impact of different defects on the kinetics of Negative Bias Temperature Instability of Hafnium stacks

Zhang, J.F.; Zhao, C.Z.; Chang, M.H.; Zahid, Mohammed; Peaker, A.R.; Hall, S; Groeseneken, Guido; Pantisano, Luigi; De Gendt, Stefan; Heyns, Marc (2008)

Instability and defects in gate dielectric: similarity and differences between Hf-stacks and SiO2

Zhang, J.F.; Zhao, C.Z.; Chang, M.H.; Zhang, W.; Groeseneken, Guido; Pantisano, Luigi; De Gendt, Stefan; Heyns, Marc (2007)

Interface state generation after hole injection

Zhao, C.Z.; Zhang, C.D.; Groeseneken, Guido; Degraeve, Robin; Ellis, J. N.; Beech, C. D. (2001)

On the activation and passivation of precursors for process-induced positive charges in Hf-dielectric stacks

Chang, M.H.; Zhao, C.Z.; Ji, Z.; Zhang, J.F.; Groeseneken, Guido; Pantisano, Luigi; De Gendt, Stefan; Heyns, Marc (2009)

Process-induced positive charges in Hf-based gate stacks

Zhao, C.Z.; Zhang, J.F.; Chang, M.H.; Peaker, A.R.; Hall, S.; Groeseneken, Guido; Pantisano, Luigi; De Gendt, Stefan; Heyns, Marc (2008)

Properties and dynamic behavior of electron traps in HfO2/SiO2 stacks

Zhao, C.Z.; Zahid, Mohammed; Zhang, John; Groeseneken, Guido; Degraeve, Robin; De Gendt, Stefan (2005-06)

Relation between hole traps and hydrogenous species in silicon dioxides

Zhang, J.F.; Zhao, C.Z.; Sii, H.K.; Groeseneken, Guido; Degraeve, Robin; Ellis, J.N.; Beech, C.D. (2002)

Stress-induced positive charge in Hf-based gate dielectrics: impact on device performance and a framework for the defect

Zhao, C.Z.; Zhang, Jian F.; Chang, Mo H.; Peaker, Anthony R.; Hall, Stephen; Groeseneken, Guido; Pantisano, Luigi; De Gendt, Stefan; Heyns, Marc (2008)

Threshold voltage instability of p-channel metal-oxide-semiconductor field effect transistors with hafnium based dielectrics

Zhao, C.Z.; Zahid, M.B.; Zhang, J.F.; Groeseneken, Guido; Degraeve, Robin; De Gendt, Stefan (2007)

Which defect breaks down gate oxides?

Zhang, W.D.; Zhang, J.F.; Zhao, C.Z.; Groeseneken, Guido; Degraeve, Robin (2003)