Browsing by author "Van Houdt, Jan"
Now showing items 141-160 of 358
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High-Endurance Ferroelectric (La, Y) and (La, Gd) Co-Doped Hafnium Zirconate Grown by Atomic Layer Deposition
Popovici, Mihaela Ioana; Walke, Amey; Bizindavyi, Jasper; Meersschaut, Johan; Banerjee, Kaustuv; Potoms, Goedele; Katcko, Kostantine; Van den Bosch, Geert; Delhougne, Romain; Kar, Gouri Sankar; Van Houdt, Jan (2022) -
High-k dielectrics and high work function metals for hybrid floating gate NAND flash applications
Lisoni, Judit; Breuil, Laurent; Blomme, Pieter; De Stefano, Francesca; Afanasiev, Valeri; Van den Bosch, Geert; Van Houdt, Jan (2014) -
High-k dielectrics and metal gates for future generation memory devices
Kittl, Jorge; Opsomer, Karl; Popovici, Mihaela Ioana; Menou, Nicolas; Kaczer, Ben; Wang, Xin Peng; Adelmann, Christoph; Pawlak, Malgorzata; Tomida, Kazuyuki; Rothschild, Aude; Govoreanu, Bogdan; Degraeve, Robin; Schaekers, Marc; Zahid, Mohammed; Delabie, Annelies; Meersschaut, Johan; Polspoel, W.; Clima, Sergiu; Pourtois, Geoffrey; Detavernier, C.; Knaepen, W.; Afanasiev, Valeri; Blomberg, T.; Pierreux, Dieter; Swerts, Johan; Maes, Jan; Manger, D.; Vandervorst, Wilfried; Conard, Thierry; Franquet, Alexis; Favia, Paola; Bender, Hugo; Brijs, Bert; Van Elshocht, Sven; Jurczak, Gosia; Van Houdt, Jan; Wouters, Dirk (2009) -
High-k dielectrics and metal gates for future generation memory devices
Kittl, Jorge; Opsomer, Karl; Popovici, Mihaela Ioana; Menou, Nicolas; Kaczer, Ben; Wang, Xin Peng; Adelmann, Christoph; Pawlak, Malgorzata; Tomida, Kazuyuki; Rothschild, Aude; Govoreanu, Bogdan; Degraeve, Robin; Schaekers, Marc; Zahid, Mohammed; Delabie, Annelies; Meersschaut, Johan; Polspoel, W.; Clima, Sergiu; Pourtois, Geoffrey; Knaepen, W.; Detavernier, C.; Afanasiev, Valeri; Blomberg, T.; Pierreux, Dieter; Swerts, Johan; Fischer, P.; Maes, Jan; Manger, D.; Vandervorst, Wilfried; Conard, Thierry; Franquet, Alexis; Favia, Paola; Bender, Hugo; Brijs, Bert; Van Elshocht, Sven; Jurczak, Gosia; Van Houdt, Jan; Wouters, Dirk (2009) -
High-k dielectrics for future generation memory devices
Kittl, Jorge; Opsomer, Karl; Popovici, Mihaela Ioana; Menou, Nicolas; Kaczer, Ben; Wang, Xin Peng; Adelmann, Christoph; Pawlak, Malgorzata; Tomida, Kazuyuki; Rothschild, Aude; Govoreanu, Bogdan; Degraeve, Robin; Schaekers, Marc; Zahid, Mohammed; Delabie, Annelies; Meersschaut, Johan; Polspoel, Wouter; Clima, Sergiu; Pourtois, Geoffrey; Knaepen, W.; Detavernier, C.; Afanasiev, Valeri; Blomberg, T.; Pierreux, Dieter; Swerts, Johan; Fischer, Pamela; Maes, Jan; Manger, Dirk; Vandervorst, Wilfried; Conard, Thierry; Franquet, Alexis; Favia, Paola; Bender, Hugo; Brijs, Bert; Van Elshocht, Sven; Jurczak, Gosia; Van Houdt, Jan; Wouters, Dirk (2009) -
High-k dielectrics for hybrid floating gate memory applications
Lisoni, Judit; Breuil, Laurent; Blomme, Pieter; Van Houdt, Jan (2012) -
High-k gadolinium and aluminum scandates for hybrid floating gate NAND flash
Lisoni, Judit; Breuil, Laurent; Nyns, Laura; Blomme, Pieter; Van den Bosch, Geert; Van Houdt, Jan (2013) -
High-k gadolinium and aluminum scandates for hybrid floating gate NAND flash
Lisoni, Judit; Breuil, Laurent; Nyns, Laura; Blomme, Pieter; Van den Bosch, Geert; Van Houdt, Jan (2013) -
High-k materials for flash scaling into the sub-40nm era
Van Houdt, Jan (2008) -
High-k materials for nonvolatile memory applications
Van Houdt, Jan (2005) -
High-k materials for tunnel barrier engineering in future memory technologies
Blomme, Pieter; Govoreanu, Bogdan; Rosmeulen, Maarten; Akheyar, Amal; Haspeslagh, Luc; De Vos, Joeri; Lorenzini, Martino; Van Houdt, Jan; De Meyer, Kristin (2004-10) -
High-temperature reliability behavior of SSI-flash EEPROM devices
De Blauwe, Jan; Wellekens, Dirk; Groeseneken, Guido; Haspeslagh, Luc; Van Houdt, Jan; Deferm, Ludo; Maes, Herman (1997) -
Highly scaled vertical cylindrical SONOS cell with bi-layer poly-silicon channel for 3D NAND flash memory
Van den Bosch, Geert; Kar, Gouri Sankar; Blomme, Pieter; Arreghini, Antonio; Cacciato, Antonio; Breuil, Laurent; De Keersgieter, An; Paraschiv, Vasile; Vrancken, Christa; Douhard, Bastien; Richard, Olivier; Van Aerde, Steven; Debusschere, Ingrid; Van Houdt, Jan (2011) -
Higk-k materials for tunnel barrier engineering in floating-gate flash memories
Blomme, Pieter; Govoreanu, Bogdan; Rosmeulen, Maarten; Akheyar, Amal; Haspeslagh, Luc; De Vos, Joeri; Lorenzini, Martino; Van Houdt, Jan; De Meyer, Kristin (2005) -
How far can we analyze oxide traps spatially with charge injection techniques?
Cho, Moon Ju; Degraeve, Robin; Roussel, Philippe; Zahid, Mohammed; Govoreanu, Bogdan; Kaczer, Ben; Van Houdt, Jan; Groeseneken, Guido (2008-12) -
Hybrid floating gate cell for sub-20-nm NAND flash memory technology
Blomme, Pieter; Cacciato, Antonio; Wellekens, Dirk; Breuil, Laurent; Rosmeulen, Maarten; Kar, Gouri Sankar; Locorotondo, Sabrina; Vrancken, Christa; Richard, Olivier; Debusschere, Ingrid; Van Houdt, Jan (2012) -
Identifying alternative ferroelectric materials beyond Hf(Zr)O-2
Guo, Jing; Clima, Sergiu; Pourtois, Geoffrey; Van Houdt, Jan (2020) -
Impact of ambient temperature on the switching behavior of voltage-controlled perpendicular magnetic tunnel junction
Wu, Jackson; Kim, Woojin; Van Beek, Simon; Couet, Sebastien; Carpenter, Robert; Rao, Siddharth; Kundu, Shreya; Yasin, Farrukh; Van Houdt, Jan; Groeseneken, Guido; Crotti, Davide; Kar, Gouri Sankar (2020) -
Impact of ambient temperature on the switching of voltage-controlled perpendicular magnetic tunnel junction
Wu, Jackson; Kim, Woojin; Van Beek, Simon; Couet, Sebastien; Carpenter, Robert; Rao, Siddharth; Kundu, Shreya; Van Houdt, Jan; Groeseneken, Guido; Crotti, Davide; Kar, Gouri Sankar (2021) -
Impact of Charge Trapping and Depolarization on Data Retention Using Simultaneous P-V and I-V in HfO2-Based Ferroelectric FET
Higashi, Yusuke; Ronchi, Nicolo; Kaczer, Ben; Alam, Md Nur Kutubul; O'Sullivan, Barry; Banerjee, Kaustuv; McMitchell, Sean; Breuil, Laurent; Walke, Amey; Van den Bosch, Geert; Linten, Dimitri; Van Houdt, Jan (2021)