Browsing by author "Schmidt, B."
Now showing items 1-7 of 7
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Chemistry of the silicon oxide surface: adsorption from SC1 solutions
Hall, L.; Sees, J.; Hurd, Trace; Schmidt, B.; Bellay, L.; Loewenstein, Lee; Mertens, Paul (1998) -
Chemistry of the silicon oxide surface: adsorption from SC1 solutions
Hall, L.; Sees, J.; Hurd, Trace; Schmidt, B.; Bellay, L.; Loewenstein, Lee; Mertens, Paul (1999) -
Investigation of plasma hydrogenation and trapping mechanism for layer transfer
Chen, Peng; Chu, Paul K.; Hochbauer, T.; Lee, J-K; Nastasi, M.; Buca, D.; Mantl, S; Loo, Roger; Caymax, Matty; Alford, T.; Mayer, J.W.; David Theodore, N.; Cai, M.; Schmidt, B.; Lau, S.S. (2005) -
Millisecond flash lamp annealing of shallow implanted layers in Ge
Wündisch, C.; Posselt, M.; Schmidt, B.; Heera, V.; Schumann, T.; Mücklich, A.; Grötzschel, R.; Skorupa, W.; Clarysse, Trudo; Simoen, Eddy; Hortenbach, H. (2009) -
Millisecond flash lamp annealing of ultrashallow implanted layers in Ge
Posselt, M.; Wündisch, C.; Schmidt, B.; Schumann, T.; Mücklich, A.; Skorupa, W.; Clarysse, Trudo; Simoen, Eddy; Hortenbach, H. (2009) -
n+ doping of Ge by P or As implantation and flash-lamp annealing
Wündisch, C.; Posselt, M.; Anwand, W.; Schmidt, B.; Grötzschel, R.; Mücklich, A.; Skorupa, W.; Simoen, Eddy; Clarysse, Trudo; Satta, Alessandra; Hortenbach, H.; Möller, A.; Pelzing, P. (2008) -
RTA and FLA of Ultra-shallow implanted layers in Ge
Wündisch, C.; Posselt, M.; Anwand, W.; Schmidt, B.; Mücklich, A.; Skorupa, W.; Clarysse, Trudo; Simoen, Eddy (2008)