Browsing by author "Jin, S."
Now showing items 1-20 of 49
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A chemical role of refractory metal caps in Co silicidation: Evidence of SiO2 reduction by Ti cap
Kondoh, Eiichi; Conard, Thierry; Brijs, Bert; Jin, S.; Bender, Hugo; de Potter de ten Broeck, Muriel; Maex, Karen (1999) -
A new approach for the measurement of resistivity and cross-sectional area of an aluminium interconnect line: principle and applications
Li, Hua; Jin, S.; Proost, Joris; Van Hove, Marleen; Froyen, L.; Maex, Karen (1998) -
Calculation of the electron mobility in III-V inversion layers with high-kappa dielectrics
O'Regan, Terrance; Soree, Bart; Fischetti, Massimo; Jin, S.; Magnus, Wim; Meuris, Marc (2010) -
Characterisation of tungsten nitride barrier layer for copper metallisation
Jin, S.; Li, H.; Bender, Hugo; Heyvaert, Ilse; Maex, Karen (1999) -
Characterization and barrier properties for Cu metallization of tungsten nitride deposited by PECVD using WF6+N2+H2
Li, H.; Heyvaert, Ilse; Jin, S.; Lanckmans, Filip; Bender, Hugo; Maex, Karen; Froyen, L. (1998) -
Characterization of WF6/N2/H2 plasma enhanced chemical vapor deposited WxN films as barriers for Cu metallization
Li, Hua; Jin, S.; Bender, Hugo; Lanckmans, Filip; Heyvaert, Ilse; Maex, Karen; Froyen, L. (2000) -
Comparative study of Ni-silicide and Co-silicide for sub 0.25-μm technologies
Lauwers, A.; Besser, Paul; Gutt, T.; Satta, Alessandra; de Potter de ten Broeck, Muriel; Lindsay, Richard; Roelandts, Nico; Loosen, Fred; Jin, S.; Bender, Hugo; Stucchi, Michele; Vrancken, Evi; Deweerdt, Bruno; Maex, Karen (2000) -
Comparison of the electromigration behavior of Al(MgCu) with Al(Cu) and Al(SiCu)
Li, Hua; Witvrouw, Ann; Jin, S.; Bender, Hugo; Maex, Karen; Froyen, L. (1998) -
Effects of low-thermal-budget treatments on the porous Si material properties
Stalmans, Lieven; Poortmans, Jef; Bender, Hugo; Jin, S.; Conard, Thierry; Nijs, Johan; Debarge, L.; Slaoui, A. (2000) -
Effects of low-thermal-budget treatments on the porous silicon material properties
Stalmans, Lieven; Poortmans, Jef; Bender, Hugo; Jin, S.; Conard, Thierry; Debarge, L.; Slaoui, A.; Nijs, Johan (1998) -
Electron microscopic studies of Co- and Ti-germanosilicide films formed on SiGe layers
Jin, S.; Donaton, R. A.; Bender, Hugo; Maex, Karen (1998) -
Epitaxial GdSi1.7 prepared by ion beam synthesis on (111) silicon
Bender, Hugo; Jin, S.; Wu, Ming Fang; Vantomme, Andre; Pattyn, Hugo; Langouche, H. (1996) -
Epitaxial GdSi1.7 prepared by ion beam synthesis on (111) silicon
Bender, Hugo; Jin, S.; Wu, Ming Fang; Vantomme, Andre; Pattyn, Hugo; Langouche, H. (1998) -
Epitaxial growth of Gd silicides prepared by channeled ion implantation
Jin, S.; Bender, Hugo; Wu, Ming Fang; Vantomme, Andre; Pattyn, Hugo; Langouche, G. (1997) -
Formation and thermal stability of Nd0.32Y0.68Si1.7 layers formed by channeled ion beam synthesis
Wu, Ming Fang; Vantomme, Andre; Hogg, S.; Pattyn, H.; Langouche, G.; Jin, S.; Bender, Hugo (1998) -
Formation of continuous and ultra-thin PtSi layers for infrared detector applications
Donaton, R. A.; Jin, S.; Bender, Hugo; Maex, Karen; Vantomme, Andre; Langouche, G. (1998) -
Formation of ultra-thin PtSi layers with a 2-step silicidation process
Donaton, R. A.; Jin, S.; Bender, Hugo; Zagrebnov, Maxim; Baert, Kris; Maex, Karen; Vantomme, Andre; Langouche, G. (1997) -
Growth of (111)-oriented Pb(Zr,Ti)O3 layers on nanocrystalline RuO2 electrodes using the sol-gel technique
Norga, Gerd; Jin, S.; Fè, Laura; Wouters, D. J.; Bender, Hugo; Maes, Herman (2001) -
Growth of high-quality buried Y- and (Y, Nd)-silicide layers prepared by channelled ion implantation
Jin, S.; Bender, Hugo; Wu, Ming Fang; Vantomme, Andre; Hogg, S.; Pattyn, H.; Langouche, G. (1998) -
Influence of SiGe thickness on the Co/SiGe/Si solid state reaction
Alves Donaton, Ricardo; Jin, S.; Bender, Hugo; Maex, Karen; Vantomme, Andre; Langouche, G. (1999)