Browsing by author "Zhang, J.F."

A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias

Ji, Z.; Zhang, J.F.; Lin, L.; Duan, M.; Zhang, W.; Zhang, X.; Gao, R.; Kaczer, Ben; Franco, Jacopo; Schram, Tom; Horiguchi, Naoto; De Gendt, Stefan; Groeseneken, Guido (2015)

AC NBTI of Ge pMOSFETs: impact of energy alternating defects on lifetime prediction

Ma, J.; Zhang, W.; Zhang, J.F.; Ji, Z.; Benbakhti, B.; Franco, Jacopo; Mitard, Jerome; Witters, Liesbeth; Collaert, Nadine; Groeseneken, Guido (2015)

Advanced electrical characterization toward (sub) 1nm EOT HfSiON – hole trapping in PFET and L-dependent effects

Zahid, Mohammed; Pantisano, Luigi; Degraeve, Robin; Aoulaiche, Marc; Trojman, Lionel; Ferain, Isabelle; San Andres Serrano, Enrique; Groeseneken, Guido; Zhang, J.F.; Heyns, Marc; Jurczak, Gosia; De Gendt, Stefan (2007)

An assessment of the mobility degradation induced by remote charge scattering

Ji, Z.; Zhang, J.F.; Zhang, W.; Groeseneken, Guido; Pantisano, Luigi; De Gendt, Stefan; Heyns, Marc (2009)

Characterization of electron traps in Si-capped Ge MOSFETs with HfO2/SiO2 gate stack

Benbakhti, B.; Zhang, J.F.; Li, Z.; Zhang, W; Mitard, Jerome; Kaczer, Ben; Groeseneken, Guido; Hall, S.; Robertson, J.; Chalker, P. (2012)

Characterization of negative-bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack

Ma, J.; Zhang, J.F.; Ji, Zhigang; Benbakhti, Brahim; Zhang, Wei Dong; Zheng, Xue Feng; Mitard, Jerome; Kaczer, Ben; Groeseneken, Guido; Hall, S.; Robertson, J.; Chalker, P. (2014)

Damaging species in the hole injection induced electron trap generation

Chang, M.H.; Zhang, J.F.; Groeseneken, Guido; Degraeve, Robin (2003)

Degradation of oxides and oxynitrides under hot hole stress

Zhang, J.F.; Sii, H. K.; Groeseneken, Guido; Degraeve, Robin (2000)

Different types of positive charges generated near the oxide/Si interface

Zhang, C.Z.; Zhang, J.F.; Groeseneken, Guido; Degraeve, Robin (2003)

Effects of detrapping on electron traps generated in gate oxides

Zhang, W.D.; Zhang, J.F.; Lalor, M.J.; Burton, D.R.; Groeseneken, Guido; Degraeve, Robin (2003)

Effects of measurement temperature on NBTI

Zhang, J.F.; Chang, M.H.; Groeseneken, Guido (2007-04)

Electron trap generation at different temperatures in the gate oxide

Zhang, W.D.; Zhang, J.F.; Wood, M.; Lalor, M.; Burton, D.; Groeseneken, Guido; Degraeve, Robin (2002)

Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing scheme

Hatem, Firas Odai Hatem; Chai, Z.; Zhang, Wei; Fantini, Andrea; Degraeve, Robin; Clima, Sergiu; Garbin, Daniele; Robertson, J.; Guo, Y,; Zhang, J.F.; Marsland, John; Freitas, Pedro; Goux, Ludovic; Kar, Gouri Sankar (2019)

ESD characterization of planar InGaAs devices

Ji, Zhigang; Linten, Dimitri; Boschke, Roman; Hellings, Geert; Chen, Shih-Hung; Alian, AliReza; Zhou, Daisy; Mols, Yves; Ivanov, Tsvetan; Franco, Jacopo; Kaczer, Ben; Zhang, X.; Gao, R.; Zhang, J.F.; Zhang, W.; Collaert, Nadine; Groeseneken, Guido (2015)