Browsing by author "Gupta, Somya"
Now showing items 1-20 of 21
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Analysis of the time-dependent electrical current in reverse-biased p-GeSn/n-Ge mesa diodes
Baert, Bruno; Gupta, Somya; Gencarelli, Federica; Loo, Roger; Simoen, Eddy; Nguyen, Duy (2015-09) -
Border traps in InGaAs nMOSFETs assessed by low-frequency noise
Scarpino, Mercedes; Gupta, Somya; Lin, Dennis; Alian, AliReza; Crupi, Felice; Collaert, Nadine; Thean, Aaron; Simoen, Eddy (2014) -
Current transients in reverse-biased p-GeSn/n-Ge diodes
Baert, Bruno; Gupta, Somya; Gencarelli, Federica; Shimura, Yosuke; Loo, Roger; Simoen, Eddy; Nguyen, Ngoc Duy (2015) -
Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si
Gupta, Somya; Shimura, Yosuke; Richard, Olivier; Douhard, Bastien; Simoen, Eddy; Bender, Hugo; Nakatsuka, Osama; Zaima, Shigeaki; Loo, Roger; Heyns, Marc (2018-10) -
Density and capture cross-section of interface traps in GeSnO2 and GeO2 grown on hetero-epitaxial GeSn
Gupta, Somya; Simoen, Eddy; Loo, Roger; Madia, Oreste; Lin, Dennis; Merckling, Clement; Shimura, Yosuke; Conard, Thierry; Lauwaert, Johan; Vrielinck, Henk; Heyns, Marc (2016-05) -
Device assessment of electrically active defects in high-mobility materials
Claeys, Cor; Simoen, Eddy; Eneman, Geert; Ni, Kai; Hikavyy, Andriy; Loo, Roger; Gupta, Somya; Merckling, Clement; Alian, AliReza; Caymax, Matty (2016) -
Electrical activity of threading dislocations and defect complexes in GeSn epitaxial layers
Gupta, Somya; Simoen, Eddy; Asano, Takanori; Nakatsuka, Osamu; Gencarelli, Federica; Shimura, Yosuke; Moussa, Alain; Loo, Roger; Zaima, Shigeaki; Nguyen, Ngoc Duy; Heyns, Marc (2013) -
Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes
Baert, Bruno; Gupta, Somya; Gencarelli, Federica; Loo, Roger; Simoen, Eddy; Nguyen, Duy (2015) -
Electrical characterization of pGeSn/nGe diodes
Baert, Bruno; Gupta, Somya; Gencarelli, Federica; Loo, Roger; Simoen, Eddy; Nguyen, Duy Ngoc (2014-06) -
Electrical properties of extended defects in strain relaxed GeSn
Gupta, Somya; Simoen, Eddy; Loo, Roger; Shimura, Yosuke; Gencarelli, Federica; Wouters, Lennaert; Paredis, Kristof; Bender, Hugo; Vrielink, Henk; Heyns, Marc (2018) -
GeSn channel nMOSFETs: material potential and technological outlook
Gupta, Somya; Vincent, Benjamin; Lin, Dennis; Gunji, M.; Firrincieli, Andrea; Gencarelli, Federica; Magyari-Kope, B.; Yang, B.; Douhard, Bastien; Delmotte, Joris; Franquet, Alexis; Caymax, Matty; Dekoster, Johan; Nishi, Y.; Saraswat, K.C. (2012) -
Identification of deep levels associated with extended and point defects in GeSn epitaxial layers using DLTS
Gupta, Somya; Simoen, Eddy; Vrielinck, Henk; Merckling, Clement; Vincent, Benjamin; Gencarelli, Federica; Loo, Roger; Heyns, Marc (2013) -
Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra
Gupta, Somya; Simoen, Eddy; Loo, Roger; Smets, Quentin; Verhulst, Anne; Lauwaert, Johan; Vrielinck, Henk; Heyns, Marc (2018) -
Impact of traps on the electrical characteristics of GeSn/Ge diodes
Baert, Bruno; Gupta, Somya; Gencarelli, Federica; Loo, Roger; Simoen, Eddy; Nguyen, N.D. (2014-09) -
On the electrical activity of extended defects in high-mobility channel materials
Simoen, Eddy; Eneman, Geert; Hikavyy, Andriy; Loo, Roger; Gupta, Somya; Merckling, Clement; Alian, AliReza; Schulze, Andreas; Caymax, Matty; Langer, Robert; Barla, Kathy; Claeys, Cor (2015) -
Profiling of border traps at GeSn and high-K oxide interface
Gupta, Somya; Simoen, Eddy; Dobri, Adam; Vrielinck, Henk; Lauwaert, Johan; Merckling, Clement; Gencarelli, Federica; Shimura, Yosuke; Loo, Roger; Heyns, Marc (2014) -
Profiling of border traps at GeSn and high-K oxide interface
Gupta, Somya; Simoen, Eddy; Dobri, Adam; Vrielinck, Henk; Lauwaert, Johan; Merckling, Clement; Gencarelli, Federica; Shimura, Yosuke; Loo, Roger; Heyns, Marc (2014-10) -
Properties of defects in GeSn and III-V based heterostructures
Gupta, Somya (2018-12) -
Study of electrically active defects in epitaxial layers on silicon
Simoen, Eddy; Dhayalan, Sathish Kumar; Jayachandran, Suseendran; Gupta, Somya; Gencarelli, Federica; Hikavyy, Andriy; Loo, Roger; Rosseel, Erik; Delabie, Annelies; Caymax, Matty; Langer, Robert; Barla, Kathy; Vrielinck, Henk; Lauwaert, Johan (2016) -
Study of interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics
Baert, Bruno; Gupta, Somya; Schmeits, Marcel; Simoen, Eddy; Nguyen, Ngoc Duy (2013)