Browsing by author "Gaur, Abhinav"

2D materials: roadmap to CMOS integration

Huyghebaert, Cedric; Schram, Tom; Smets, Quentin; Agarwal Kumar, Tarun; Verreck, Devin; Brems, Steven; Phommahaxay, Alain; Chiappe, Daniele; El Kazzi, Salim; Lockhart de la Rosa, Cesar Javier; Arutchelvan, Goutham; Cott, Daire; Ludwig, Jonathan; Gaur, Abhinav; Sutar, Surajit; Leonhardt, Alessandra; Marinov, Daniil; Lin, Dennis; Caymax, Matty; Asselberghs, Inge; Pourtois, Geoffrey; Radu, Iuliana (2018)

A MOS capacitor model for ultra-thin 2D semiconductors: the impact of interface defects and channel resistance

Gaur, Abhinav; Agarwal, Tarun; Asselberghs, Inge; Radu, Iuliana; Heyns, Marc; Lin, Dennis (2020)

Analysis of admittance measurements of MOS capacitors on CVD grown bilayer MoS2

Gaur, Abhinav; Chiappe, Daniele; Lin, Dennis; Cott, Daire; Asselberghs, Inge; Heyns, Marc; Radu, Iuliana (2019)

Demonstration of 2e12/cm-2-eV-1 2D-oxide interface trap density on back-gated MoS2 flake devices with 2.5nm EOT

Gaur, Abhinav; Balaji, Yashwanth; Lin, Dennis; Adelmann, Christoph; Van Houdt, Jan; Heyns, Marc; Mocuta, Dan; Radu, Iuliana (2017)

Measurement of direct and indirect bandgaps in synthetic ultrathin MoS2 and WS2 films from photoconductivity spectra

Shlyakhov, Ilya; Iakoubovskii, K.; Banerjee, Sreetama; Gaur, Abhinav; Lin, Dennis; Asselberghs, Inge; Radu, Iuliana; Chai, J.; Yang, M.; Wang, S. J.; Houssa, Michel; Stesmans, A.; Afanas'ev, V. (2021)

MoS2 functionalization with a Sub-nm thin SiO2 layer for atomic layer deposition of high-k dielectrics

Zhang, Haodong; Arutchelvan, Goutham; Meersschaut, Johan; Gaur, Abhinav; Conard, Thierry; Bender, Hugo; Lin, Dennis; Asselberghs, Inge; Heyns, Marc; Radu, Iuliana; Vandervorst, Wilfried; Delabie, Annelies (2017)

Optimizing the MOS capacitor design to study large area 2D-oxide interface

Gaur, Abhinav; Lin, Dennis; Chiappe, Daniele; Adelmann, Christoph; Van Houdt, Jan; Mocuta, Dan; Heyns, Marc; Radu, Iuliana (2017)

Scaled transistors with 2D materials from the 300mm fab

Asselberghs, Inge; Schram, Tom; Smets, Quentin; Groven, Benjamin; Brems, Steven; Phommahaxay, Alain; Cott, Daire; Dupuy, Emmanuel; Radisic, Dunja; de Marneffe, Jean-Francois; Thiam, Arame; Li, Waikin; Devriendt, Katia; Gaur, Abhinav; Verreck, Devin; Maurice, Thibaut; Lin, Dennis; Morin, Pierre; Radu, Iuliana (2020)

Ultra-scaled MOCVD MoS2 MOSFETs with 42nm contacted pitch and 250μA/μm drain current

Smets, Quentin; Arutchelvan, Goutham; Jussot, Julien; Verreck, Devin; Asselberghs, Inge; Nalin Mehta, Ankit; Gaur, Abhinav; Lin, Dennis; El Kazzi, Salim; Groven, Benjamin; Caymax, Matty; Radu, Iuliana (2019)

Wafer-scale integration of double gated WS2-transistors in 300mm Si CMOS fab

Asselberghs, Inge; Smets, Quentin; Schram, Tom; Groven, Benjamin; Verreck, Devin; Afzalian, Aryan; Arutchelvan, Goutham; Gaur, Abhinav; Cott, Daire; Maurice, Thibaut; Brems, Steven; Kennes, Koen; Phommahaxay, Alain; Dupuy, Emmanuel; Radisic, Dunja; de Marneffe, Jean-Francois; Thiam, Arame; Li, Waikin; Devriendt, Katia; Huyghebaert, Cedric; Lin, Dennis; Caymax, Matty; Morin, Pierre; Radu, Iuliana (2020)