Browsing by author "Arnoldi, Laurent"
Now showing items 1-16 of 16
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3D dopant profiling in silicon nanowires
Fleischmann, Claudia; Melkonyan, Davit; Arnoldi, Laurent; Bogdanowicz, Janusz; Kumar, Arul; Veloso, Anabela; Vandervorst, Wilfried (2016) -
Accurate stoichiometric analysis of Al1 xGaxN/GaN structures using APT and the influence of laser, poles and zone lines
Morris, Richard; Arnoldi, Laurent; Cuduvally, Ramya; Melkonyan, Davit; Fleischmann, Claudia; Zhao, Ming; Vandervorst, Wilfried (2017) -
APT analysis of short (~200 nm) Si nanowires embedded in SiO2 and HfO2
Melkonyan, Davit; Fleischmann, Claudia; Veloso, Anabela; Arnoldi, Laurent; Kumar, Arul; Bogdanowicz, Janusz; Vurpillot, Francois; Vandervorst, Wilfried (2016) -
Atom probe conditions for stoichiometric quantification of GaN and Al1 xGaxN
Morris, Richard; Arnoldi, Laurent; Cuduvally, Ramya; Melkonyan, Davit; Fleischmann, Claudia; Zhao, Ming; Vandervorst, Wilfried (2017) -
Atom probe tomography analysis of SiGe fins embedded in SiO2: facts and artefacts
Melkonyan, Davit; Fleischmann, Claudia; Arnoldi, Laurent; Demeulemeester, Jelle; Kumar, Arul; Bogdanowicz, Janusz; Vurpillot, Francois; Vandervorst, Wilfried (2017) -
Atom probe tomography for advanced semiconductor technology research
Fleischmann, Claudia; Melkonyan, Davit; Arnoldi, Laurent; Morris, Richard; Bogdanowicz, Janusz; Vandervorst, Wilfried (2017) -
Challenges for APT in advanced semiconductor technology research
Melkonyan, Davit; Fleischmann, Claudia; Bogdanowicz, Janusz; Arnoldi, Laurent; Kumar, Arul; Vurpillot, Francois; Vandervorst, Wilfried (2016) -
Emitter shape evolution during field evaporation and its impact on the reconstructed data of SiGe fins embedded in SiO2
Melkonyan, Davit; Arnoldi, Laurent; Fleischmann, Claudia; Kumar, Arul; Vurpillot, Francois; Bogdanowicz, Janusz; Vandervorst, Wilfried (2016) -
Low-frequency noise measurements for electromigration characterization in BEOL interconnects
Beyne, Sofie; Croes, Kristof; Varela Pedreira, Olalla; Arnoldi, Laurent; van der Veen, Marleen; De Wolf, Ingrid; Tokei, Zsolt (2019) -
Non stoichiometric atom emission from bulk InP under green and UV laser illumination
Morris, Richard; Arnoldi, Laurent; Fleischmann, Claudia; Bogdanowicz, Janusz; Vandervorst, Wilfried (2016) -
(Non-hemispherical) apex shape formation and (non-uniform) apex temperature distribution during laser-assisted atomprobe tomography of semiconductors
Bogdanowicz, Janusz; Kumar, Arul; Melkonyan, Davit; Arnoldi, Laurent; Fleischmann, Claudia; Morris, Richard; Vella, Angela; Gilbert, Matthieu; Jonathan, Houard; Vandervorst, Wilfried (2016) -
Potential sources of inaccuracy for the composition quantification of InGaAs and InAlAs
Cuduvally, Ramya; Morris, Richard; Melkonyan, Davit; Arnoldi, Laurent; Bogdanowicz, Janusz; Fleischmann, Claudia; Vandervorst, Wilfried (2017) -
Quantitative compositional analysis of compound semiconductors by atom probe tomography
Cuduvally, Ramya; Morris, Richard; Bogdanowicz, Janusz; Melkonyan, Davit; Arnoldi, Laurent; Fleischmann, Claudia; Vandervorst, Wilfried (2018) -
Resolving the 3D boron distribution in vertical Si nanowires using atom probe tomography
Melkonyan, Davit; Fleischmann, Claudia; Arnoldi, Laurent; Veloso, Anabela; Bogdanowicz, Janusz; Morris, Richard; Vandervorst, Wilfried (2017) -
Study of the enhanced electromigration performance of Cu(Mn) by low-frequency noise measurements and atom probe tomography
Beyne, Sofie; Arnoldi, Laurent; De Wolf, Ingrid; Tokei, Zsolt; Croes, Kristof (2017) -
Towards accurate composition analysis of GaN and AlGaN using Atom Probe Tomography
Morris, Richard; Cuduvally, Ramya; Melkonyan, Davit; Fleischmann, Claudia; Zhao, Ming; Arnoldi, Laurent; van der Heide, Paul; Vandervorst, Wilfried (2018)