Browsing by author "Tsunoda, Isao"

Gate-length dependent radiation damage in 2-MeV electron-irradiated Si1-xGexS/D p-MOSFETs

Nakashima, Toshiyuki; Idemoto, Tatsuya; Tsunoda, Isao; Takakura, Kenichiro; Yoneoka, Masashi; Ohyama, Hidenori; Yoshino, Kenji; Simoen, Eddy; Claeys, Cor (2012)

Improvement of the crystalline quality of β-Ga2O3 films by high-temperature annealing

Takahara, Motoki; Funasaki, Suguru; Kudou, Jyun; Tsunoda, Isao; Takakura, Kenichiro; Ohyama, Hidenori; Nakashima, Toshiyuki; Shibuya, Mutsuo; Murakami, Katsuya; Simoen, Eddy; Claeys, Cor (2012)

Increased radiation hardness of short-channel electron-irradiated Si1-xGex source/drain p-type metal oxide semiconductor field-effect transistors at higher Ge content

Nakashima, Toshiyuki; Yoneoka, Masashi; Tsunoda, Isao; Takakura, Kenichiro; Gonzalez, Mireia B; Simoen, Eddy; Claeys, Cor; Yoshino, Kenji (2013)

Local compressive stress generation in electron irradiated boron-doped Si0.75Ge0.25/Si devices

Tsunoda, Isao; Nakashima, Toshiyuki; Naka, Noboyuki; Idemoto, Tatsuya; Yoneoka, Masahi; Takakura, Kenichiro; Yoshino, Kenji; Bargallo Gonzalez, Mireia; Simoen, Eddy; Claeys, Cor; Ohyama, Hidenori (2012)

Radiation tolerance of Si1-yCy source/drain n-MOSFETs with different carbon concentrations

Asai, Yuki; Hori, Masato; Yoneda, Masashi; Tsunoda, Isao; Takakura, Kenichiro; Bargallo Gonzalez, Mireia; Simoen, Eddy; Claeys, Cor; Yoshino, Kenji (2013)

Thermal recovery process of electron irradiated Si1-xCx source/drain n-MOSFETs

Takakura, Kenichiro; Mori, Masato; Yoneoka, Masashi; Tsunoda, Isao; Nakashima, Toshiyuki; Simoen, Eddy; Claeys, Cor (2015)