Browsing by author "Toeller, Michael"
Now showing items 1-11 of 11
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Crystallization and semiconductor-metal switching behavior of thin VO2 layers grown by atomic layer deposition
Rampelberg, Geert; Deduytsche, Davy; De Schutter, Bob; Peter, Antony; Toeller, Michael; Schaekers, Marc; Martens, Koen; Radu, Iuliana; Detavernier, Christophe (2014) -
Evidences of anodic-oxidation reset mechanism in TiN\NiO\Ni RRAM cells
Goux, Ludovic; Degraeve, Robin; Govoreanu, Bogdan; Chou, H.-Y.; Afanasiev, Valeri; Meersschaut, Johan; Toeller, Michael; Wang, X.P.; Kubicek, Stefan; Richard, Olivier; Kittl, Jorge; Wouters, Dirk; Jurczak, Gosia; Altimime, Laith (2011) -
High performance oxide diode
Radu, Iuliana; Govoreanu, Bogdan; Ikram, Rafay; Peter, Antony; Martens, Koen; Hody, Hubert; Kim, Woosik; Toeller, Michael; Paraschiv, Vasile; Favia, Paola; Clima, Sergiu; De Gendt, Stefan; Heyns, Marc; Stesmans, Andre; Jurczak, Gosia (2013) -
Hydrogen-induced resistive switching in TiN/ALD HfO2/PEALD TiN RRAM device
Chen, Yangyin; Goux, Ludovic; Swerts, Johan; Toeller, Michael; Adelmann, Christoph; Kittl, Jorge; Jurczak, Gosia; Groeseneken, Guido; Wouters, Dirk (2012) -
Influence of process parameters on low current resistive switching in MOCVD and ALD NiO Films
Wang, Xin Peng; Wouters, Dirk; Toeller, Michael; Meersschaut, Johan; Goux, Ludovic; Chen, Yangyin; Govoreanu, Bogdan; Pantisano, Luigi; Degraeve, Robin; Jurczak, Gosia; Altimime, Laith; Kittl, Jorge (2011) -
Metal-insulator transition in ALD VO2 ultrathin films and nanoparticles: morphological control
Peter, Antony; Martens, Koen; Rampelberg, Geert; Toeller, Michael; Ablett, James; Meersschaut, Johan; Cuypers, Daniel; Franquet, Alexis; Detavernier, Christophe; Reuff, Jean-Pascal; Schaekers, Marc; Van Elshocht, Sven; Jurczak, Gosia; Adelmann, Christoph; Radu, Iuliana (2015) -
Metal-organic chemical vapor deposition of Ti-doped NiO layers for application in resistive switching memories
Meersschaut, Johan; Toeller, Michael; Schaekers, Marc; Wang, Xin Peng; Brijs, Bert; Wouters, Dirk; Jurczak, Gosia; Altimime, Laith; Van Elshocht, Sven; Vancoille, Eric (2010) -
NiO thin films synthesized by atomic layer deposition using Ni(dmamb)2 and O3 as precursors
Peter, Antony; Toeller, Michael; Adelmann, Christoph; Meersschaut, Johan; Franquet, Alexis; Richard, Olivier; Tielens, Hilde; Brijs, Bert; Moussa, Alain; Conard, Thierry; Bender, Hugo; Schaekers, Marc; Kittl, Jorge; Jurczak, Gosia; Van Elshocht, Sven (2012) -
Process study and characterization of VO2 thin films synthesized by ALD using TEMAV and O3 precursors
Peter, Antony; Toeller, Michael; Radu, Iuliana; Adelmann, Christoph; Schaekers, Marc; Meersschaut, Johan; Conard, Thierry; Van Elshocht, Sven (2012) -
Vanadium dioxide for selector applications
Radu, Iuliana; Govoreanu, Bogdan; Martens, Koen; Toeller, Michael; Peter, Antony; Ikram, Rafay; Zhang, Leqi; Hody, Hubert; Kim, Woosik; Favia, Paola; Conard, Thierry; Chou, H. Y.; Put, Brecht; Afanasiev, Valeri; Stesmans, Andre; Heyns, Marc; De Gendt, Stefan; Jurczak, Gosia (2013) -
Vanadium oxide thin films grown by ALD using TEMAV and O3 or H2O precursors
Peter, Antony; Toeller, Michael; Radu, Iuliana; Adelmann, Christoph; Schaekers, Marc; Meersschaut, Johan; Conard, Thierry; Jurczak, Gosia; Van Elshocht, Sven (2012)