Browsing by author "Bonzom, Renaud"

Epitaxial growth on germanium: kinetics and layer quality

Bonzom, Renaud; Leys, Frederik; Loo, Roger; Caymax, Matty; Vandervorst, Wilfried (2005)

Epitaxy solutions for Ge MOS technology

Leys, Frederik; Bonzom, Renaud; Loo, Roger; Richard, Olivier; De Jaeger, Brice; Van Steenbergen, Jan; Dessein, Kristof; Conard, Thierry; Rip, Jens; Bender, Hugo; Vandervorst, Wilfried; Meuris, Marc; Caymax, Matty (2005)

Ge deep sub-micron HiK/MG pFET with superior drive compared to Si HiK/MG state-of-the-art reference

De Jaeger, Brice; Kaczer, Ben; Zimmerman, Paul; Opsomer, Karl; Winderickx, Gillis; Van Steenbergen, Jan; Van Moorhem, Els; Terzieva, Valentina; Bonzom, Renaud; Leys, Frederik; Arena, Chantal; Bauer, Matthias; Werkhoven, Chris; Caymax, Matty; Meuris, Marc; Heyns, Marc (2007-01)

Germanium deep-submicron p-FET and n-FET devices, fabricated on germanium-on-insulator substrates

Meuris, Marc; De Jaeger, Brice; Van Steenbergen, Jan; Bonzom, Renaud; Caymax, Matty; Houssa, Michel; Kaczer, Ben; Leys, Frederik; Martens, Koen; Opsomer, Karl; Pourghaderi, Mohammad Ali; Satta, Alessandra; Simoen, Eddy; Terzieva, Valentina; Van Moorhem, Els; Winderickx, Gillis; Loo, Roger; Clarysse, Trudo; Conard, Thierry; Delabie, Annelies; Hellin, David; Janssens, Tom; Onsia, Bart; Sioncke, Sonja; Mertens, Paul; Snow, Jim; Van Elshocht, Sven; Vandervorst, Wilfried; Zimmerman, Paul; Brunco, David; Raskin, G.; Letertre, F.; Akatsu, T.; Billon, T.; Heyns, Marc (2007)

Growth kinetics and relaxation mechanism of very thin epitaxial Si films on (100) germanium

Bonzom, Renaud; Leys, Frederik; Loo, Roger; Richard, Olivier; Vanhaeren, Danielle; Rip, Jens; Van Steenbergen, Jan; De Jaeger, Brice; Bender, Hugo; Vandervorst, Wilfried; Caymax, Matty; Meuris, Marc (2005)

Growth kinetics of germanium on (100) germanium by pyrolysis of germane

Bonzom, Renaud; Leys, Frederik; Loo, Roger; Dessein, Kristof; Vandervorst, Wilfried; Caymax, Matty (2005)

Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates

De Jaeger, Brice; Bonzom, Renaud; Leys, Frederik; Richard, Olivier; Van Steenbergen, Jan; Winderickx, Gillis; Van Moorhem, Els; Raskin, G.; Letertre, F.; Billon, T.; Meuris, Marc; Heyns, Marc (2005-06)