Browsing by author "dimoulas, A."

A deep-level transient spectroscopy study of implanted Ge p+n and n+p junctions by Pt-induced crystallization

Simoen, Eddy; Lauwaert, J.; Vrielinck, H.; Ioannou-Sougleridis, V.; dimoulas, A. (2011)

Active trap determination at the interface of Ge and In0.53Ga0.47As substrates with dielectric layers

Molle, A.; Baldovino, S.; Lamagna, L.; Spiga, S.; Lamperti, A.; Fanciulli, M.; Tsoutsou, D.; Golias, E.; dimoulas, A.; Brammertz, Guy; Merckling, Clement; Caymax, Matty (2011)

Characterization of atomic-beam deposited GeO1-xNx/HfO2 stacks on Ge

Houssa, Michel; Conard, Thierry; Van Steenbergen, Jan; Mavrou, G.; Panayiotatos, Y.; dimoulas, A.; Meuris, Marc; Caymax, Matty; Heyns, Marc (2005)

Complex admittance analysis for La2Hf2O7/SiO2 high-kappa dielectric stacks

Apostolopoulos, G.; Vellianitis, G.; dimoulas, A.; Hooker, Jacob; Conard, Thierry (2004-01)

Determining weak Fermi-level pinning in MOS devices by coductance and capacitance analysis and application to GaAs MOS devices

Martens, Koen; Wang, Wenfei; dimoulas, A.; Borghs, Gustaaf; Meuris, Marc; Groeseneken, Guido; Maes, Herman (2007)

Electron energy band alignment at interfaces of (100)Ge with Gd2O3 and LaHfO

Afanasiev, Valeri; Shamuilia, Sheron; dimoulas, A.; Stesmans, Andre; Houssa, Michel (2005)

Germanium FETs and capacitors with rare earth CeO2/HfO2 gates

dimoulas, A.; Panayiotatos, Y.; Sotiropoulos, A.; Tsipas, P.; Brunco, David; Nicholas, Gareth; Van Steenbergen, Jan; Bellenger, Florence; Houssa, Michel; Caymax, Matty; Meuris, Marc (2007)

Germanium MOSFETs with CeO2/HfO2/TiN gate stacks

Nicholas, Gareth; Brunco, David; dimoulas, A.; Van Steenbergen, Jan; Bellenger, Florence; Houssa, Michel; Caymax, Matty; Meuris, Marc; Panayiotatos, Y.; Sotiropoulos, A. (2007)

HfO2 high-k gate dielectrics on Ge(100) by atomic oxygen beam deposition

dimoulas, A.; Mavrou, G.; Vellianitis, G.; Evangelou, E.; Boukos, N.; Houssa, Michel; Caymax, Matty (2005)

High quality, large area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy

Xenogiannopoulou, E.; Tsipas, P.; Aretouli, K.E.; Tsoutsou, D.; Giamini, S.A.; Bazioti, C.; Dimitrakopulos, G.P.; Kominou, P.; Brems, Steven; Huyghebaert, Cedric; Radu, Iuliana; dimoulas, A. (2015)

Interface engineering for Ge metal-oxide-semiconductor devices

dimoulas, A.; Brunco, David; Ferrari, S.; Seo, J.W.; Panayiotatos, Y.; Sotiropoulos, A.; Conard, Thierry; Caymax, Matty; Spiga, S.; Fanciulli, M.; Dieker, C.; Evangelou, E. K.; Galata, S.; Houssa, Michel; Heyns, Marc (2007)

Materials and electrical characterization of molecular beam deposited CeO2

Brunco, David; dimoulas, A.; Boukos, N.; Houssa, Michel; Conard, Thierry; Martens, Koen; Zhao, Chao; Bellenger, Florence; Caymax, Matty; Meuris, Marc; Heyns, Marc (2007-07)

MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement

Vellianitis, G.; Apostolopoulos, G.; Mavrou, G.; Argyropoulos, K.; dimoulas, A.; Hooker, Jacob; Conard, Thierry; Butcher, M. (2004-06)

Molecular beam epitaxy for advanced gate stack materials and processes

Locquet, Jean-Pierre; Marchiori, Chiara; Sousa, M.; Siegwart, H.; Caimi, D.; Fompeyrine, Jean; Pantisano, Luigi; Claes, Martine; Conard, Thierry; Demand, Marc; Deweerd, Wim; De Gendt, Stefan; Heyns, Marc; Houssa, Michel; Aoulaiche, Marc; Lujan, Guilherme; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Hooker, Jacob; Rittersma, Chris; Furukawa, Yukiko; Seo, J.W.; dimoulas, A. (2005)

MOSFET with La2HfO7 and HfO2 high-k dielectrics integrated in a conventional flow

Pantisano, Luigi; Conard, Thierry; Claes, Martine; Demand, Marc; Deweerd, Wim; De Gendt, Stefan; Heyns, Marc; Houssa, Michel; Aoulaiche, Marc; Lujan, Guilherme; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Hooker, Jacob; Rittersma, Chris; Fompereyne, Jean; Locquet, Jean-Pierre; dimoulas, A. (2005)

Phase-dependent resistance in a superconductor-two-dimensional-electron-gas quasiparticle interferometer

dimoulas, A.; Heida, J. P.; van Wees, B. J.; Klapwijk, T. M.; Van de Graaf, Willem; Borghs, Gustaaf (1995)

Short minority carrier response time in HfO2/Ge metal-insulator-semiconductor capacitors

dimoulas, A.; Vellianitis, G.; Mavrou, G.; Evengelou, E.; Argyropoulos, K.; Houssa, Michel; Caymax, Matty (2005)

Supercurrent transport and quasiparticle interference in a mesoscopic two-dimensional electron gas coupled to superconductors

van Wees, B. J.; dimoulas, A.; Heida, J. P.; Klapwijk, T. M.; Van de Graaf, Willem; Borghs, Gustaaf (1994)

Transport through a 2DEG channel with superconducting boundaries

Nitta, J.; van Wees, B. J.; Heida, J. P.; Klapwijk, T. M.; dimoulas, A.; Van de Graaf, Willem; Borghs, Gustaaf (1996)