Browsing by author "Wu, Wei-Min"
Now showing items 1-14 of 14
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A 28 GHz front-end module with T/R switch achieving 17.2 dBm P-sat, 21.5% PAE(max) and 3.2 dB NF in 22 nm FD-SOI for 5G communication
Liu, Yao; Tang, Xinyan; Mangraviti, Giovanni; Khalaf, Khaled; Zhang, Yang; Wu, Wei-Min; Chen, Shih-Hung; Debaillie, Bjorn; Wambacq, Piet (2020) -
Calibration and modeling of LICCDM setups
Simicic, Marko; Wu, Wei-Min; Tamura, Shinichi; Shimada, Yohei; Sawada, Masanori; Chen, Shih-Hung (2021) -
Comprehensive Investigations of HBM ESD Robustness for GaN-on-Si RF HEMTs
Sandupatla, Abhinay; Wu, Wei-Min; Shih, Chun-An; Chen, Shih-Hung; Sibaja-Hernandez, Arturo; Parvais, Bertrand; Peralagu, Uthayasankaran; Alian, AliReza; Wu, T. -L.; Ker, M. -D.; Groeseneken, Guido; Collaert, Nadine (2022) -
Design and Analysis of a 28 GHz T/R Front-End Module in 22-nm FD-SOI CMOS Technology
Tang, Xinyan; Liu, Yao; Mangraviti, Giovanni; Zong, Zhiwei; Khalaf, Khaled; Zhang, Yang; Wu, Wei-Min; Chen, Shih-Hung; Debaillie, Bjorn; Wambacq, Piet (2021) -
ESD Failures of GaN-on-Si D-Mode AlGaN/GaN MIS-HEMT and HEMT Devices for 5G Telecommunications
Wu, Wei-Min; Chen, Shih-Hung; Putcha, Vamsi; Peralagu, Uthayasankaran; Sibaja-Hernandez, Arturo; Yadav, Sachin; Parvais, Bertrand; Alian, AliReza; Collaert, Nadine; Ker, Ming-Dou; Groeseneken, Guido (2021) -
ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs
Wu, Wei-Min; Ker, Ming-Dou; Chen, Shih-Hung; Sibaja-Hernandez, Arturo; Yadav, Sachin; Peralagu, Uthayasankaran; Yu, Hao; Alian, AliReza; Putcha, Vamsi; Parvais, Bertrand; Collaert, Nadine; Groeseneken, Guido (2022-01-25) -
ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs
Wu, Wei-Min; Chen, Shih-Hung; Sibaja-Hernandez, Arturo; Yadav, Sachin; Peralagu, Uthayasankaran; Yu, Hao; Alian, AliReza; Putcha, Vamsi; Parvais, Bertrand; Groeseneken, Guido; Ker, M.D.; Collaert, Nadine (2021) -
ESD protection diodes in sub-5nm gate-all-around nanosheet technologies
Chen, Shih-Hung; Veloso, Anabela; Mertens, Hans; Hellings, Geert; Simicic, Marko; Chen, Wen Chieh; Wu, Wei-Min; Serbulova, Kateryna; Linten, Dimitri; Horiguchi, Naoto (2020) -
Interconnect Capacitance Investigation and Optimization Under I/O Pad for ESD Protection of RF/High Speed Circuits in Micro- & Nano-scale CMOS Technology
Wu, Wei-Min; Chen, Jie-Ting; Chen, Shih-Hung; Ker, Ming-Dou; Linten, Dimitri; Groeseneken, Guido (2020) -
Low-impedance Contact CDM – Evaluation and Modeling
Simicic, Marko; Wu, Wei-Min; Chen, Shih-Hung; Jack, Nathan; Tamura, Shinichi; Shimada, Yohei; Sawada, Masanori; Linten, Dimitri (2019) -
ON-State Human Body Model ESD Failure Mechanisms in GaN-on-Si RF MIS-HEMTs
Wu, Wei-Min; Chen, Shih-Hung; Shih, Chun-An; Parvais, Bertrand; Collaert, Nadine; Ker, Ming-Dou; Wu, Tian-Li; Groeseneken, Guido (2023) -
Optimization of wafer-level low-impedance contact CDM testers
Simicic, Marko; Wu, Wei-Min; Jack, Nathan; Tamura, Shinichi; Shimada, Yohei; Sawada, Masanori; Chen, Shih-Hung (2020-11) -
RF/high-speed I/O ESD protection: Co-optimizing strategy between BEOL capacitance and HBM immunity in advanced CMOS process
Wu, Wei-Min; Ker, Ming-Dou; Chen, Shih-Hung; Chen, Jie-Ting; Linten, Dimitri; Groeseneken, Guido (2020) -
Wafer-Level LICCDM Device Testing
Simicic, Marko; Wu, Wei-Min; Claes, Dieter; Tamura, Shinichi; Shimada, Yohei; Sawada, Masanori; Chen, Shih-Hung (2021)