Browsing by author "Altimime, Laith"
Now showing items 41-57 of 57
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Process-improved RRAM cell performance and reliability and paving the way for manufacturability and scalability for high density memory application
Kar, Gouri Sankar; Fantini, Andrea; Chen, Yangyin; Paraschiv, Vasile; Govoreanu, Bogdan; Hody, Hubert; Jossart, Nico; Tielens, Hilde; Brus, Stephan; Richard, Olivier; Vandeweyer, Tom; Wouters, Dirk; Altimime, Laith; Jurczak, Gosia (2012) -
Realizing super-steep subthreshold slope with conventional FDSOI CMOS at low-bias voltages
Lu, Zhichao; Collaert, Nadine; Aoulaiche, Marc; De Wachter, Bart; De Keersgieter, An; Fossum, Jerry; Altimime, Laith; Jurczak, Gosia (2010) -
Reliability and retention of 1T-RAM cell capacitor less on UTBOX SOI substrates
Aoulaiche, Marc; Collaert, Nadine; Simoen, Eddy; Mercha, Abdelkarim; De Wachter, Bart; Bourdelle, K.K.; Nguyen, B.-Y.; Boedt, F.; Delprat, D.; Jurczak, Gosia; Altimime, Laith (2010) -
Roles and effects of TiN and Pt electrodes in resistive-switching HfO2 systems
Goux, Ludovic; Wang, Xin Peng; Chen, Yangyin; Pantisano, Luigi; Jossart, Nico; Govoreanu, Bogdan; Kittl, Jorge; Jurczak, Gosia; Altimime, Laith; Wouters, Dirk (2011) -
Scaled X-bar TiN/HfO2/TiN RRAM cells processed with optimised plasma enhanced atomic layer deposition (PEALD) for TiN electrode
Chen, Yangyin; Goux, Ludovic; Pantisano, Luigi; Swerts, Johan; Adelmann, Christoph; Mertens, Sofie; Afanasiev, Valeri; Wang, Xin Peng; Govoreanu, Bogdan; Degraeve, Robin; Kubicek, Stefan; Paraschiv, Vasile; Jossart, Nico; Altimime, Laith; Jurczak, Gosia; Kittl, Jorge; Groeseneken, Guido; Wouters, Dirk (2013) -
Self-limited filament formation and low-powerresistive switching in CuxTe1-x/Al2O3/Si CBRAM cell
Goux, Ludovic; Opsomer, Karl; Schuitema, Rudy; Degraeve, Robin; Muller, Robert; Detavernier, C.; Wouters, Dirk; Jurczak, Gosia; Altimime, Laith; Kittl, Jorge (2011) -
Standard cell level parasitics assessment in 20nm BPL and 14nm BFF
Schuddinck, Pieter; Badaroglu, Mustafa; Stucchi, Michele; Demuynck, Steven; Hikavyy, Andriy; Garcia Bardon, Marie; Mercha, Abdelkarim; Mallik, Arindam; Chiarella, Thomas; Kubicek, Stefan; Athimulam, Raja; Collaert, Nadine; Horiguchi, Naoto; Debusschere, Ingrid; Thean, Aaron; Altimime, Laith; Verkest, Diederik (2012) -
Substrate bias dependency of sense margin and retention in bulk FinFET 1T-DRAM cells
Collaert, Nadine; Aoulaiche, Marc; De Keersgieter, An; De Wachter, Bart; Altimime, Laith; Jurczak, Gosia (2011) -
Substrate bias dependency of sense margin and retention in bulk FinFET 1T-DRAM cells
Collaert, Nadine; Aoulaiche, Marc; De Keersgieter, An; De Wachter, Bart; Jurczak, Gosia; Altimime, Laith (2010-09) -
Switching by Ni filaments in a HfO2 matrix: a new pathway to improved unipolar switching RRAM
Chen, Yangyin; Pourtois, Geoffrey; Wang, Xin Peng; Adelmann, Christoph; Goux, Ludovic; Govoreanu, Bogdan; Pantisano, Luigi; Kubicek, Stefan; Altimime, Laith; Jurczak, Gosia; Kittl, Jorge; Groeseneken, Guido; Wouters, Dirk (2011) -
The economic impact of EUV lithography on critical process modules
Mallik, Arindam; Horiguchi, Naoto; Boemmels, Juergen; Thean, Aaron; Barla, Kathy; Vandenberghe, Geert; Ronse, Kurt; Ryckaert, Julien; Mercha, Abdelkarim; Altimime, Laith; Verkest, Diederik; Steegen, An (2014) -
Towards 1X DRAM: Improved leakage 0.4 nm EOT STO-based MIMcap and explanation of leakage reduction mechanism showing further potential
Pawlak, Malgorzata; Kaczer, Ben; Wang, Wan-Chih; Kim, Min-Soo; Popovici, Mihaela Ioana; Swerts, Johan; Tomida, Kazuyuki; Opsomer, Karl; Schaekers, Marc; Vrancken, Christa; Govoreanu, Bogdan; Belmonte, Attilio; Demeurisse, Caroline; Debusschere, Ingrid; Altimime, Laith; Afanasiev, Valeri; Kittl, Jorge (2011) -
Transfering magnetic vortices between many spin torque oscillators
Manfrini, Mauricio; Kim, Joo-Von; Petit-Watelot, Sebastien; Otxoa, Ruben; Chappert, Claude; Van Roy, Wim; Altimime, Laith; Lagae, Liesbet; Devolder, Thibaut (2012) -
Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiNbipolar RRAM achieved through understanding-based stack-engineering
Goux, Ludovic; Fantini, Andrea; Kar, Gouri Sankar; Chen, Yangyin; Jossart, Nico; Degraeve, Robin; Clima, Sergiu; Govoreanu, Bogdan; Lorenzo, G.; Pourtois, Geoffrey; Wouters, Dirk; Kittl, Jorge; Altimime, Laith; Jurczak, Gosia (2012) -
Understanding of trap-assisted tunneling current - assisted by oxygen vacancies in RuOx/SrTiO3/TiN MIM capacitor for the DRAM Application
Kim, Min-Soo; Kaczer, Ben; Starschich, Sergej; Popovici, Mihaela Ioana; Swerts, Johan; Richard, Olivier; Tomida, Kazuyuki; Vrancken, Christa; Van Elshocht, Sven; Debusschere, Ingrid; Altimime, Laith; Kittl, Jorge (2012) -
Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): an area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell
Govoreanu, Bogdan; Redolfi, Augusto; Zhang, Leqi; Adelmann, Christoph; Popovici, Mihaela Ioana; Clima, Sergiu; Hody, Hubert; Paraschiv, Vasile; Radu, Iuliana; Franquet, Alexis; Liu, Jen-Chieh; Swerts, Johan; Richard, Olivier; Bender, Hugo; Altimime, Laith; Jurczak, Gosia (2013) -
Voltage- and temperature-dependent reliability of the set/reset switching in TiN/HfO2/Pt resistive RAM
Chen, Yangyin; Goux, Ludovic; Pantisano, Luigi; Wang, XinPeng; Degraeve, Robin; Govoreanu, Bogdan; Jurczak, Gosia; Wouters, Dirk; Altimime, Laith; Groeseneken, Guido (2010-12)