Browsing by author "Thomas, Shawn"
Now showing items 1-8 of 8
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High efficiency low temperature pre-epi clean method for advanced group IV epi processing
Machkaoutsan, Vladimir; Weeks, Doran; Bauer, Matthias; Maes, Jan; Tolle, John; Thomas, Shawn; Alian, AliReza; Hikavyy, Andriy; Loo, Roger (2012-09) -
High efficiency low temperature pre-epi clean method for advanced group IV epi processing
Machkaoutsan, Vladimir; Weeks, Doran; Bauer, Matthias; Maes, Jan; Tolle, John; Thomas, Shawn; Alian, AliReza; Hikavyy, Andriy; Loo, Roger (2012) -
Influence of the strain-relaxation induced defect creation on the lekage current of embedded Si1-xGex source/drain junctions
Bargallo Gonzalez, Mireia; Simoen, Eddy; Vissouvanadin Soubaretty, Bertrand; Eneman, Geert; Verheyen, Peter; Loo, Roger; Claeys, Cor; Machkaoutsan, Vladimir; Tomasini, Pierre; Thomas, Shawn (2009-06) -
Is there an impact of threading dislocations on the characteristics of devices fabricated in strained-Ge substrates?
Simoen, Eddy; Brouwers, Gijs; Yang, Rui; Eneman, Geert; Bargallo Gonzalez, Mireia; Leys, Frederik; De Jaeger, Brice; Mitard, Jerome; Brunco, David; Souriau, Laurent; Cody, Nyles; Thomas, Shawn; Lajaunie, Luc; David, Marie-Laure (2009) -
Leakage current study of Si1-xCx embedded source/drain junctions
Simoen, Eddy; Vissouvanadin Soubaretty, Bertrand; Taleb, Nadjib; Bargallo Gonzalez, Mireia; Verheyen, Peter; Loo, Roger; Claeys, Cor; Machkaoutsan, Vladimir; Bauer, Matthias; Thomas, Shawn; Lu, J.-P.; Wise, Rick (2008) -
SiCP selective epitaxial growth in recessed source/drain regions yielding to drive current enhancement in n-channel MOSFET
Bauer, Matthias; Machkaoutsan, Vladimir; Zhang, Y.; Weeks, Doran; Spear, Jennifer; Thomas, Shawn; Verheyen, Peter; Kerner, Christoph; Clemente, Francesca; Bender, Hugo; Shamiryan, Denis; Loo, Roger; Hikavyy, Andriy; Hoffmann, Thomas Y.; Absil, Philippe; Biesemans, Serge (2008) -
Stability of silicon germanium stressors
Tomasini, Pierre; Machkaoutsan, Vladimir; Thomas, Shawn; Loo, Roger; Caymax, Matty; Verheyen, Peter (2010) -
Strain enhanced nMOS using in-situ doped embedded Si:C S/D stressors with up to 1.5% substitutional carbon content grown using a novel deposition process
Verheyen, Peter; Kerner, Christoph; Clemente, Francesca; Bender, Hugo; Shamiryan, Denis; Loo, Roger; Hoffmann, Thomas Y.; Absil, Philippe; Biesemans, Serge; Lu, Jiong-Ping; Wise, Rick; Machkaoutsan, Vladimir; Bauer, Matthias; Weeks, Dorian; Thomas, Shawn (2008)