Browsing by author "Pattyn, Hugo"
Now showing items 1-18 of 18
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Backscattering/channeling study of high dose rare-earth implants in Si
Vantomme, Andre; Wu, Ming Fang; Wahl, U.; Pattyn, Hugo; Bender, Hugo; Langouche, G. (1997) -
Backscattering/channeling study of high-dose rare-earth implants into Si
Vantomme, Andre; Wahl, U.; Wu, Ming Fang; Hogg, S.; Pattyn, Hugo; Langouche, G.; Bender, Hugo (1998) -
Channeled ion beam synthesis: a new technique to form epitaxial rare-earth silicides with high quality
Wu, Ming Fang; Vantomme, Andre; Pattyn, Hugo; Langouche, H.; Bender, Hugo (1996) -
Channeled ion beam synthesis: a new technique to form high-quality rare-earth silicides
Vantomme, Andre; Wu, Ming Fang; Wahl, U.; De Wachter, J.; Degroote, S.; Pattyn, Hugo; Langouche, H.; Bender, Hugo (1996) -
Channeled ion beam synthesis: a new technique to form high-quality rare-earth silicides
Vantomme, Andre; Wu, Ming Fang; Wahl, U.; Pattyn, Hugo; Langouche, H.; Bender, Hugo (1996) -
Comprehensive Rutherford backscattering and channeling study of ion-beam-synthesized ErSi1.7 layers
Wu, Ming Fang; Vantomme, Andre; De Wachter, Jo; Degroote, S.; Pattyn, Hugo; Langouche, G.; Bender, Hugo (1996) -
Crystalline quality and phase stability of hexagonal GdSi1.7 layers formed by ion beam synthesis
Wu, Ming Fang; Vantomme, Andre; Pattyn, Hugo; Langouche, G.; Bender, Hugo (1996) -
Epitaxial GdSi1.7 prepared by ion beam synthesis on (111) silicon
Bender, Hugo; Jin, S.; Wu, Ming Fang; Vantomme, Andre; Pattyn, Hugo; Langouche, H. (1996) -
Epitaxial GdSi1.7 prepared by ion beam synthesis on (111) silicon
Bender, Hugo; Jin, S.; Wu, Ming Fang; Vantomme, Andre; Pattyn, Hugo; Langouche, H. (1998) -
Epitaxial growth of Gd silicides prepared by channeled ion implantation
Jin, S.; Bender, Hugo; Wu, Ming Fang; Vantomme, Andre; Pattyn, Hugo; Langouche, G. (1997) -
Growth and Properties of Ion Beam Synthesized Si/CoxN1-xSi2/Si (111) Structures
Wu, Ming Fang; De Wachter, Jo; Van Bavel, Mieke; Pattyn, Hugo; Langouche, G.; Vanhellemont, Jan; Bender, Hugo; Temst, K.; Wuyts, Bart; Bruynseraede, Y. (1994) -
High quality GdSi1.7 layers formed by high dose channeled implantation
Wu, Ming Fang; Vantomme, Andre; Pattyn, Hugo; Langouche, G.; Bender, Hugo (1996) -
Identification of Sn-V related acceptor levels in irradiated tin-doped n-type silicon
Simoen, Eddy; Claeys, Cor; Neimash, V. B.; Kraitchinskii, A.; Kras'ko, M.; Puzenko, O.; Blondeel, A.; Clauws, P.; Pattyn, Hugo; Koops, G.E.J.; Pattyn, H. (2000) -
Metastable and stable transistion-metal silicide layer formation in Si and SiGe
Dézsi, I.; Fetzer, C.; Bill, E.; Caymax, Matty; Pattyn, Hugo; Degroote, Sven; Langouche, G.; Vantomme, Andre (1999) -
Stabilisation and phase transformation of hexagonal rare-earth silicides on Si(111)
Vantomme, Andre; Wu, Ming Fang; Hogg, S.; Wahl, U.; Deweerd, Wim; Pattyn, Hugo; Langouche, G.; Jin, S.; Bender, Hugo (1998) -
Stabilisation and phase transformation of hexagonal rare-earth silicides on Si(111)
Vantomme, Andre; Wu, Ming Fang; Hogg, S. M.; Wahl, U.; Deweerd, Wim; Pattyn, Hugo; Langouche, G.; Jin, S.; Bender, Hugo (1999) -
Structural characterization of ion beam synthesized epitaxial ErSi2-x layers
Bender, Hugo; Wu, Ming Fang; Vantomme, Andre; Pattyn, Hugo; Langouche, G. (1996) -
Structural characterization of ion-beam synthesized NiSi2 layers
Wu, Ming Fang; De Wachter, Jo; Van Bavel, Mieke; Moons, Raf; Vantomme, Andre; Pattyn, Hugo; Langouche, G.; Bender, Hugo; Vanhellemont, Jan; Temst, K.; Bruynseraede, Y. (1995)