Browsing by author "Lander, Rob"
Now showing items 21-31 of 31
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Material aspects and challenges for SOI FinFET integration
Van Dal, Mark; Vellianitis, Georgios; Duffy, Ray; Doornbos, Gerben; Pawlak, Bartek; Duriez, Blandine; Lai, Li-Shyue; Hikavyy, Andriy; Vandeweyer, Tom; Demand, Marc; Altamirano Sanchez, Efrain; Rooyackers, Rita; Witters, Liesbeth; Collaert, Nadine; Jurczak, Gosia; Kaiser, M.; Weemaes, R. G. R.; Lander, Rob (2008) -
Materials and electrical characterization of metal gate electrodes on high-k dielectrics for advanced CMOS technologies
Hooker, Jacob; Lander, Rob; Rittersma, Chris; Schram, Tom; Lujan, Guilherme; van Zijl, Jeroen; van den Heuvel, Eric; Roozeboom, Fred (2002) -
Measurement of hole transport in ultrathin SiGe layers and their application in 2D device simulations of heterojunction pMOSFETs
Lander, Rob; Ponomarev, Youri; de Boer, W. B.; Loo, Roger; Caymax, Matty (2000) -
Metal inserted poly-Si (MIPS) and FUSI dual metal (TaN and NiSi) CMOS integration
Singanamalla, Raghunath; Van Dal, Mark; Demand, Marc; Shamiryan, Denis; Beckx, Stephan; Jaenen, Patrick; Locorotondo, Sabrina; Yu, HongYu; Hooker, Jacob; Kubicek, Stefan; De Meyer, Kristin; Biesemans, Serge; Juffermans, Casper; Lander, Rob (2007-04) -
Performance and leakage optimization in carbon and fluorine C0-implanted pMOSFETs
Pawlak, Bartek; Duffy, Ray; Hooker, Jacob; Hoffmann, Thomas; Felch, S.B.; Eyben, Pierre; Absil, Philippe; Lander, Rob (2008) -
Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering
Ferain, Isabella; Duffy, Ray; Collaert, Nadine; Van Dal, Mark; Pawlak, Bartek; O'Sullivan, Barry; Witters, Liesbeth; Rooyackers, Rita; Conard, Thierry; Popovici, Mihaela Ioana; Van Elshocht, Sven; Kaiser, M.; Weemaes, R.; Swerts, Johan; Jurczak, Gosia; Lander, Rob; De Meyer, Kristin (2009) -
Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors
Schram, Tom; Ragnarsson, Lars-Ake; Lujan, Guilherme; Deweerd, Wim; Chen, Jerry; Tsai, Wilman; Henson, Kirklen; Lander, Rob; Hooker, Jacob; Vertommen, Johan; De Meyer, Kristin; De Gendt, Stefan; Heyns, Marc (2005-03) -
Scaling of Hf-based high-k dielectrics
Heyns, Marc; Beckx, Stephan; Caymax, Matty; Chen, J.; Claes, Martine; Coenegrachts, Bart; De Gendt, Stefan; Degraeve, R.; Delabie, Annelies; Deweerd, Wim; Groeseneken, Guido; Hayashi, Shigenori; Henson, Kirklen; Hooker, Jacob; Houssa, Michel; Kauerauf, Thomas; Kerber, A.; Kwak, Dong Hwa; Lander, Rob; Lujan, Guilherme; Niwa, Masaaki; Pantisano, Luigi; Puurunen, Riikka; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Shimamoto, Y.; Tsai, Wilman; Van Elshocht, Sven; Vertommen, Johan; Vandervorst, Wilfried; Kubicek, Stefan (2004) -
TaN metal gate MOSFETs with agressively scaled HfO2 dielectrics
Lander, Rob; Schram, Tom; Lujan, Guilherme; Hooker, Jacob; Vertommen, Johan; Lee, S.; Deweerd, Wim; Boullart, Werner; Van Elshocht, Sven; Carter, Richard; Kubicek, Stefan; De Meyer, Kristin; De Gendt, Stefan; Heyns, Marc (2003) -
Tantalum-based gate electrode metals for advanced CMOS devices
Hooker, Jacob; Lander, Rob; Cubaynes, Florence; Schram, Tom; Roozeboom, F.; van Zijl, J.; Maas, M.; van den Heuvel, F.C.; Naburgh, E.; van Berkum, J.G.M.; Tamminga, Y.; Dao, T.; Henson, Kirklen; Schaekers, Marc; Van Ammel, Annemie; Tokei, Zsolt; Demand, Marc; Dachs, C. (2005) -
The influence of TiN thickness and SiO2 formation method on the structural and electrical properties of TiN/HfO2/SiO2 gate stacks
Vellianitis, Georgios; Van Dal, Mark; Boccardi, Guillaume; Duriez, Blandine; Voogt, Frans; Kaiser, Monja; Witters, Liesbeth; Lander, Rob (2009)