Browsing by imec author "a9b203c3300dfebb47a6b80299f4347163aea606"
Now showing items 61-80 of 137
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Heteroepitaxy of III-V compound semiconductors on Si for logic applications: Selective area epitaxy in shallow trench isolation structures vs direct epitaxy mediated by strain relaxed buffers
Cantoro, Mirco; Merckling, Clement; Jiang, Sijia; Guo, Weiming; Waldron, Niamh; Bender, Hugo; Dekoster, Johan; Loo, Roger; Vandervorst, Wilfried; Caymax, Matty; Heyns, Marc (2012) -
Heteroepitaxy of III-V compound semiconductors on Si for logic applications: selective area epitaxy in shallow trench isolation structures vs direct epitaxy mediated by strain relaxed buffers
Cantoro, Mirco; Merckling, Clement; Jiang, Sijia; Guo, Weiming; Waldron, Niamh; Bender, Hugo; Moussa, Alain; Douhard, Bastien; Vandervorst, Wilfried; Heyns, Marc; Dekoster, Johan; Loo, Roger; Caymax, Matty (2012) -
Heteroepitaxy of InP on Si(001) in sub-50nm width trenches by Selective-Area Metalorganic Vapor-Phase Epitaxy: the role of the nucleation layer and the recess engineering
Merckling, Clement; Waldron, Niamh; Jiang, Sijia; Guo, Weiming; Collaert, Nadine; Caymax, Matty; Vancoille, Eric; Barla, Kathy; Thean, Aaron; Heyns, Marc; Vandervorst, Wilfried (2014-01) -
Heterogeneous integration and fabrication of III-V MOS devices in a 200mm processing environment
Waldron, Niamh; Nguyen, Duy; Lin, Dennis; Brammertz, Guy; Vincent, Benjamin; Firrincieli, Andrea; Winderickx, Gillis; Sioncke, Sonja; De Jaeger, Brice; Wang, Gang; Mitard, Jerome; Wang, Wei-E; Heyns, Marc; Caymax, Matty; Meuris, Marc; Absil, Philippe; Hoffmann, Thomas Y. (2011) -
Heterogeneous nano- to wide-scale co-integration of beyond-Si and Si CMOS devices to enhance future electronics
Thean, Aaron; Collaert, Nadine; Radu, Iuliana; Waldron, Niamh; Merckling, Clement; Witters, Liesbeth; Loo, Roger; Mitard, Jerome; Rooyackers, Rita; Vandooren, Anne; Verhulst, Anne; Veloso, Anabela; Yakimets, Dmitry; Huynh Bao, Trong; Chiappe, Daniele; Vaysset, Adrien; Zografos, Odysseas; Caymax, Matty; Huyghebaert, Cedric; Barla, Kathy; Steegen, An (2015) -
Heterogeneous nano-electronic devices enabled by monolithic integration of IIIV, Ge, and Si to expand future CMOS functionality
Thean, Aaron; Collaert, Nadine; Waldron, Niamh; Merckling, Clement; Witters, Liesbeth; Loo, Roger; Mitard, Jerome; Rooyackers, Rita; Vandooren, Anne; Verhulst, Anne; Veloso, Anabela; Pourghaderi, Mohammad Ali; Eneman, Geert; Yakimets, Dmitry; Huynh Bao, Trong; Garcia Bardon, Marie; Ryckaert, Julien; Dehan, Morin; Wambacq, Piet; Caymax, Matty (2014) -
Heterostructure at CMOS source/drain: contributor or alleviator to the high access resistance problem?
Yu, Hao; Schaekers, Marc; Rosseel, Erik; Everaert, Jean-Luc; Eyben, Pierre; Chiarella, Thomas; Merckling, Clement; Agarwal Kumar, Tarun; Pourtois, Geoffrey; Hikavyy, Andriy; Kubicek, Stefan; Witters, Liesbeth; Sibaja-Hernandez, Arturo; Mitard, Jerome; Waldron, Niamh; Chew, Soon Aik; Demuynck, Steven; Horiguchi, Naoto; Barla, Kathy; Thean, Aaron; Mocuta, Anda; Mocuta, Dan; Collaert, Nadine; De Meyer, Kristin (2016) -
How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches
Kunert, Bernardette; Mols, Yves; Baryshnikova, Marina; Waldron, Niamh; Schulze, Andreas; Langer, Robert (2018) -
III-V and germanium FinFET devices integrated on a 300mm Si platform
Collaert, Nadine; Waldron, Niamh; Merckling, Clement; Witters, Liesbeth; Loo, Roger; Mitard, Jerome; Pourghaderi, Mohammad Ali; Eneman, Geert; Barla, Kathy; Thean, Aaron (2014) -
III-V CMP process development
Ong, Patrick; Ansar, Sheikh; Gillot, Christophe; Lan, Yongqing; Teugels, Lieve; Waldron, Niamh; Proelss, Julian (2013) -
III/V CMP process development
Ong, Patrick; Usman Ibrahim, Ansar; Gillot, Christophe; Lan, Yongqing; Teugels, Lieve; Waldron, Niamh; Proelss, Julian (2013) -
Improving defectivity for III-V CMP processes for < 10 NM technology nodes
Teugels, Lieve; Ong, Patrick; Waldron, Niamh; Boccardi, Guillaume; Usman Ibrahim, Ansar; Siebert, Max; Leunissen, Leonardus (2014) -
Improving defectivity for III-V CMP processes for <10 nm technology nodes
Teugels, Lieve; Ong, Patrick; Boccardi, Guillaume; Waldron, Niamh; Usman Ibrahim, Ansar; Siebert, Joerg Max; Leunissen, Leonardus A.H. (2014) -
In-Situ HCl etching of InP in shallow-trench-isolated structures
Orzali, Tommaso; Wang, G.; Waldron, Niamh; Richard, Olivier; Bender, Hugo; Wang, Wei-E; Caymax, Matty (2011) -
In-Situ HCl etching of InP in shallow-trench-isolated structures
Orzali, Tommaso; Wang, G.; Waldron, Niamh; Merckling, Clement; Richard, Olivier; Bender, Hugo; Wang, Wei-E; Caymax, Matty (2012) -
In-Situ HCl etching of InP in shallow-trench-isolated structures
Orzali, Tommaso; Wang, G.; Waldron, Niamh; Merckling, Clement; Richard, Olivier; Bender, Hugo; Caymax, Matty (2011) -
Influence of chemical treatments on selective epitaxial growth of InP in STI nano-trenches on Si (001) substrates
Jiang, Sijia; Merckling, Clement; Waldron, Niamh; Vandervorst, Wilfried; Caymax, Matty; Heyns, Marc (2012) -
Influence of trench width on III-V nucleation during InP selective area growth on pattern Si(001) substrate
Jiang, Sijia; Merckling, Clement; Guo, Weiming; Waldron, Niamh; Moussa, Alain; Caymax, Matty; Vandervorst, Wilfried; Seefeldt, Marc; Heyns, Marc (2014) -
Influence of trench width on III-V nucleation during InP selective area growth on patterned Si(001) substrates
Jiang, Sijia; Merckling, Clement; Moussa, Alain; Guo, Weiming; Waldron, Niamh; Collaert, Nadine; Barla, Kathy; Caymax, Matty; Vandervorst, Wilfried; Seefeldt, Marc; Heyns, Marc (2014) -
InGaAs gate-all-around nanowire devices on 300mm substrates
Waldron, Niamh; Merckling, Clement; Teugels, Lieve; Ong, Patrick; Ibrahim, Ansar; Sebaai, Farid; Pourghaderi, Mohammad Ali; Barla, Kathy; Collaert, Nadine; Thean, Aaron (2014)