Browsing by imec author "a9b203c3300dfebb47a6b80299f4347163aea606"
Now showing items 81-100 of 137
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Integration of III-V on Si for high-mobility CMOS
Waldron, Niamh; Merckling, Clement; Teugels, Lieve; Sebaai, Farid; Barla, Kathy; Collaert, Nadine; Thean, Aaron (2015) -
Integration of III-V on Si for high-mobility CMOS
Waldron, Niamh; Wang, G.; Nguyen, Ngoc Duy; Orzali, Tommaso; Merckling, Clement; Brammertz, Guy; Ong, Patrick; Winderickx, Gillis; Hellings, Geert; Eneman, Geert; Caymax, Matty; Meuris, Marc; Horiguchi, Naoto; Thean, Aaron (2012) -
Integration of InGaAs channel n-MOS devices on 200mm Si wafers using the aspect-ratio-trapping technique
Waldron, Niamh; Wang, Gang; Nguyen, Ngoc Duy; Orzali, Tommaso; Merckling, Clement; Brammertz, Guy; Ong, Patrick; Winderickx, Gillis; Hellings, Geert; Eneman, Geert; Caymax, Matty; Meuris, Marc; Horiguchi, Naoto; Thean, Aaron (2012) -
Junctionless gate-all-around lateral and vertical nanowire FETs with simplified processing for advanced logic and analog/RF applications and scaled SRAM cells
Veloso, Anabela; Parvais, Bertrand; Matagne, Philippe; Simoen, Eddy; Huynh Bao, Trong; Paraschiv, Vasile; Vecchio, Emma; Devriendt, Katia; Rosseel, Erik; Ercken, Monique; Chan, BT; Delvaux, Christie; Altamirano Sanchez, Efrain; Versluijs, Janko; Tao, Zheng; Suhard, Samuel; Brus, Stephan; Sibaja-Hernandez, Arturo; Waldron, Niamh; Lagrain, Pieter; Richard, Olivier; Bender, Hugo; Vaisman Chasin, Adrian; Kaczer, Ben; Ivanov, Tsvetan; Ramesh, Siva; De Meyer, Kristin; Ryckaert, Julien; Collaert, Nadine; Thean, Aaron (2016) -
Key challenges and opportunities for 3D sequential integration
Vandooren, Anne; Witters, Liesbeth; Franco, Jacopo; Mallik, Arindam; Parvais, Bertrand; Wu, Zhicheng; Li, Waikin; Rosseel, Erik; Hikavyy, Andriy; Peng, Lan; Rassoul, Nouredine; Jamieson, Geraldine; Inoue, Fumihiro; Verbinnen, Greet; Devriendt, Katia; Teugels, Lieve; Heylen, Nancy; Vecchio, Emma; Tao, Zheng; Waldron, Niamh; Boemmels, Juergen; De Heyn, Vincent; Mocuta, Dan; Ryckaert, Julien; Collaert, Nadine (2018-10) -
Low-frequency noise investigation of GaN/AlGaN Metal-Oxide-Semiconductor High-Electron-Mobility Field-Effect-Transistors with different gate length and orientation
Takakura, Kenichiro; Putcha, Vamsi; Simoen, Eddy; Alian, AliReza; Peralagu, Uthayasankaran; Waldron, Niamh; Parvais, Bertrand; Collaert, Nadine (2020) -
Materials and defect aspects of III-V and III-N devices for high-speed analog/RF applications
Simoen, Eddy; Hsu, Brent; Yu, Hao; Wang, Hongyue; Zhao, Ming; Takakura, Kenichiro; Putcha, Vamsi; Peralagu, Uthayasankaran; Parvais, Bertrand; Waldron, Niamh; Collaert, Nadine (2020) -
Monolithic integration of III-V semiconductors by selective area growth on Si(001) substrate: epitaxy challenges & applications
Merckling, Clement; Jiang, Sijia; Liu, Ziyang; Waldron, Niamh; Boccardi, Guillaume; Rooyackers, Rita; Wang, Zhechao; Tian, Bin; Pantouvaki, Marianna; Collaert, Nadine; Van Campenhout, Joris; Heyns, Marc; Van Thourhout, Dries; Vandervorst, Wilfried; Thean, Aaron (2015) -
Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate
Mols, Yves; Vais, Abhitosh; Yadav, Sachin; Witters, Liesbeth; Vondkar Kodandarama, Komal; Alcotte, Reynald; Baryshnikova, Marina; Boccardi, Guillaume; Waldron, Niamh; Parvais, Bertrand; Collaert, Nadine; Langer, Robert; Kunert, Bernardette (2021-09-29) -
Nucleation behavior of III/V crystal selectively grown inside nano-trenches: the influence of trench width
Jiang, Sijia; Merckling, Clement; Moussa, Alain; Waldron, Niamh; Caymax, Matty; Vandervorst, Wilfried; Collaert, Nadine; Barla, Kathy; Langer, Robert; Thean, Aaron; Seefeldt, Marc; Heyns, Marc (2015) -
On the impact of Gate field-plate length and barrier layer thickness on TDDB lifetime of GaN-on-Si MISHEMT devices for RF/5G/mm-Wave applications
Lin, Chien-Yu; Putcha, Vamsi; Alian, Alireza; Waldron, Niamh; Linten, Dimitri; Collaert, Nadine; Chang, Ting-Chang (2020) -
On the importance of source/drain series resistance in implant-free SiGe quantum well FETs
Krom, Raymond; Hellings, Geert; Mitard, Jerome; Witters, Liesbeth; Hikavyy, Andriy; Eneman, Geert; Waldron, Niamh; Heyns, Marc; Hoffmann, Thomas Y.; De Meyer, Kristin (2011) -
Optical metrology of thickness and indium content of epitaxial InxGa1-xAs layers on Si substrates
Jin, Youseung; Waldron, Niamh; Orzali, Tommaso; Caymax, Matty; Horiguchi, Naoto; Park, TaeHyun; Jiang, Zhiming; Han, SangHyun (2012) -
Parasitic subthreshold drain current and low frequency noise in GaN/AlGaN metal-oxide-semiconductor high-electron-mobility field-effect-transistors
Takakura, Kenichiro; Putcha, Vamsi; Simoen, Eddy; Alian, AliReza; Peralagu, Uthayasankaran; Waldron, Niamh; Parvais, Bertrand; Collaert, Nadine (2020) -
Patterning challenges in advanced device architectures: FinFETs to nanowire
Horiguchi, Naoto; Milenin, Alexey; Tao, Zheng; Hody, Hubert; Altamirano Sanchez, Efrain; Veloso, Anabela; Witters, Liesbeth; Waldron, Niamh; Ragnarsson, Lars-Ake; Kim, Min-Soo; Kikuchi, Yoshiaki; Mertens, Hans; Raghavan, Praveen; Piumi, Daniele; Collaert, Nadine; Barla, Kathy; Thean, Aaron (2016) -
Pulsed-laser induced single-event transients in InGaAs FinFETs on bulk silicon substrates
Gong, H.; Ni, K.; Zhang, E.X.; Sternberg, A. L.; Kuzub, J.A.; Alles, M.L.; Reed, R.; Fleetwood, D.; Schrimpf, R.; Waldron, Niamh; Kunert, Bernardette; Linten, Dimitri (2019) -
Reliability challenges of high mobility channel technologies: SiGe, Ge and InGaAs
Franco, Jacopo; Kaczer, Ben; Roussel, Philippe; Cho, Moon Ju; Grasser, Tibor; Arimura, Hiroaki; Cott, Daire; Mitard, Jerome; Witters, Liesbeth; Waldron, Niamh; Zhou, Daisy; Alian, AliReza; Vais, Abhitosh; Lin, Dennis; Martens, Koen; Pourghaderi, Mohammad Ali; Sioncke, Sonja; Collaert, Nadine; Thean, Aaron; Heyns, Marc; Groeseneken, Guido (2014) -
Replacement fin processing for III-V on Si: From FinFets to nanowires
Waldron, Niamh; Merckling, Clement; Teugels, Lieve; Ong, Patrick; Sebaai, Farid; Barla, Kathy; Collaert, Nadine; Thean, Aaron (2016) -
RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs
Franco, Jacopo; Kaczer, Ben; Waldron, Niamh; Roussel, Philippe; Alian, AliReza; Pourghaderi, Mohammad Ali; Ji, Zhigang; Grasser, Tibor; Kauerauf, Thomas; Sioncke, Sonja; Collaert, Nadine; Thean, Aaron; Groeseneken, Guido (2014) -
Scalability of InGaAs nanowires demonstrating wire width down to 7nm and Lg down to 30nm fabricated on a 300mm Si platform
Zhou, Daisy; Waldron, Niamh; Boccardi, Guillaume; Sebaai, Farid; Merckling, Clement; Eneman, Geert; Sioncke, Sonja; Nyns, Laura; Opdebeeck, Ann; Maes, Jan; Xie, Qi; Givens, M; Tang, F; Jiang, X; Guo, Weiming; Kunert, Bernardette; Teugels, Lieve; Devriendt, Katia; Sibaja-Hernandez, Arturo; Franco, Jacopo; van Dorp, Dennis; Barla, Kathy; Collaert, Nadine; Thean, Aaron (2016)