Browsing by author "Ikeda, Atsushi"
Now showing items 1-7 of 7
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A high-reliable Cu/ULK integration scheme using Metal Hard Mask and Low-k capping film
Travaly, Youssef; Tsutsue, M.; Ikeda, Atsushi; Verdonck, Patrick; Tokei, Zsolt; Willegems, Myriam; Van Aelst, Joke; Struyf, Herbert; Vereecke, Guy; Kesters, Els; Le, Quoc Toan; Claes, Martine; Heylen, Nancy; Sinapi, Fabrice; Richard, Olivier; De Roest, David; Kaneko, S; Kemeling, N; Fukazawa, A; Matsuki, N; Matsushita, K; Tsuji, N; Kagami, K; Sprey, Hessel; Beyer, Gerald (2007) -
Defect profiling and the role of nitrogen in lanthanum oxide-capped high-k dielectrics for nMOS applications
O'Sullivan, Barry; Mitsuhashi, Riichirou; Okawa, Hiroshi; Sengoku, Naohisa; Schram, Tom; Groeseneken, Guido; Biesemans, Serge; Nakabayashi, Takashi; Ikeda, Atsushi; Niwa, Masaaki (2008-09) -
Highly reliable Cu/ULK integratrion scheme using MHM and low-k capping film
Tsutsue, Makoto; Travaly, Youssef; Ikeda, Atsushi; Tokei, Zsolt; Willegems, Myriam; Struyf, Herbert; Sinapi, Fabrice; Richard, Olivier; Kemeling, Nathan; De Roest, David; Fukuzawa, A.; Matsuki, N.; Sprey, Hessel; Beyer, Gerald (2007) -
Oxygen-vacancy-induced Vt shift in La-containing devices
O'Sullivan, Barry; Mitsuhashi, Riichirou; Pourtois, Geoffrey; Chang, Vincent; Adelmann, Christoph; Schram, Tom; Ragnarsson, Lars-Ake; Van der Heyden, Nikolaas; Cho, Hag-Ju; Harada, Y.; Veloso, Anabela; O'Connor, Robert; Pantisano, Luigi; Yu, HongYu; Groeseneken, Guido; Absil, Philippe; Biesemans, Serge; Ikeda, Atsushi; Niwa, Masaaki (2007) -
Quantification of MOSFET device reliability with low-Vt lanthanum-incorporated high permittivity dielectrics
O'Sullivan, Barry; Aoulaiche, Marc; Cho, Moon Ju; Kauerauf, Thomas; Degraeve, Robin; Okawa, Hiroshi; Schram, Tom; Hoffmann, Thomas Y.; Groeseneken, Guido; Biesemans, Serge; Nakabayashi, Takashi; Ikeda, Atsushi; Niwa, Masaaki (2009) -
Reliability study of La2O3 capped HfSiON high-permittivity n-type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodes
O'Sullivan, Barry; Mitsuhashi, Riichirou; Pourtois, Geoffrey; Aoulaiche, Marc; Houssa, Michel; Van der Heyden, Nikolaas; Schram, Tom; Harada, Yoshinao; Groeseneken, Guido; Absil, Philippe; Biesemans, Serge; Nakabayashi, Takashi; Ikeda, Atsushi; Niwa, Masaaki (2008) -
Work-function engineering for 32nm node pMOS devices: high-performance TaCNO-gated films
O'Sullivan, Barry; Mitsuhashi, Riichirou; Ito, Satoru; Oikawa, Kota; Kubicek, Stefan; Paraschiv, Vasile; Adelmann, Christoph; Veloso, Anabela; Yu, HongYu; Schram, Tom; Biesemans, Serge; Nakabayashi, Takashi; Ikeda, Atsushi; Niwa, Masaaki (2008)