Browsing by author "Martino, Joao A."

Advantages of different source/drain engineering on scaled UTBOX FD SOI nMOSFETs at high temperature operation

Nicoletti, Talitha; Dos Santos, Sara; Martino, Joao A.; Aoulaiche, Marc; Veloso, Anabela; Jurczak, Gosia; Simoen, Eddy; Claeys, Cor (2014)

Analog Figures of Merit of Vertically Stacked Silicon Nanosheets nMOSFETs With Two Different Metal Gates for the Sub-7 nm Technology Node Operating at High Temperatures

Silva, Vanessa C. P.; Perina, Welder F.; Martino, Joao A.; Simoen, Eddy; Veloso, Anabela; Agopian, Paula G. D. (2021)

Analog performance of standard and uinaxial strained triple-gate SOI FinFET under X-ray radiation

Bordallo, Caio; Teixeira, Fernando; Silveira, Marcilei; Agopian, Paula G.D.; Martino, Joao A.; Simoen, Eddy; Claeys, Cor (2014)

Analysis of analog parameters on in NW-TFETs with Si and SiGe source composition for at high temperatures

Bordallo, Caio; Martino, Joao A.; Agopian, Paula; Rooyackers, Rita; Vandooren, Anne; Thean, Aaron; Simoen, Eddy; Claeys, Cor (2015)

Analysis of carrier mobility in triple gate SOI nFinFET combining rotated substrate and strain

Ribeiro, Thales; Simoen, Eddy; Claeys, Cor; Martino, Joao A.; Pavanello, Marcello (2016)

Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures

Martino, Marcio D.V.; Martino, Joao A.; Agopian, Paula G.D.; Vandooren, Anne; Rooyackers, Rita; Simoen, Eddy; Claeys, Cor (2017)

Analysis of the ZTC-Point for Vertically Stacked Nanosheet pMOS Devices

Coelho, Carlos H. S.; Martino, Joao A.; Simoen, Eddy; Veloso, Anabela; Agopian, Paula G. D. (2021)

Analysis of zero-temperature coefficient behavior on vertically stacked double nanosheet nMOS devices

Coelho, Carlos H. S.; Martino, Joao A.; Bellodi, Marcello; Simoen, Eddy; Veloso, Anabela; Agopian, Paula G. D. (2021)

Design of operational transconductance amplifier with Gate-All-Around Nanosheet MOSFET using experimental data from room temperature to 200 degrees C

Sousa, Julia C. S.; Perina, Welder F.; Rangel, Roberto; Simoen, Eddy; Veloso, Anabela; Martino, Joao A.; Agopian, Paula G. D. (2022)

DIBL in enhanced dynamic threshold operation of UTBB SOI with different drain engineering at high temperatures

Sasaki, Katia R.A.; Simoen, Eddy; Claeys, Cor; Martino, Joao A. (2016)

Enhanced dynamic threshold voltage UTBB SOI nMOSFETs

Sasaki, Katia; Manini, M.B.; Simoen, Eddy; Claeys, Cor; Martino, Joao A. (2014)

Enhanced model for ZTC in irradiated and strained pFinFET

Nascimento, Vinicius M.; Agopian, Paula G.D.; Simoen, Eddy; Claeys, Cor; Martino, Joao A. (2017)

Experimental Analysis of Trade-Off Between Transistor Efficiency and Unit Gain Frequency of Nanosheet NMOS Transistors

Silva, Vanessa C. P.; Martino, Joao A.; Simoen, Eddy; Veloso, Anabela; Agopian, Paula G. D. (2021)

Experimental comparison between relaxed and strained Ge pFinFETs

Oliveira, Alberto; Agopian, P.G.D.; Martino, Joao A.; Simoen, Eddy; Mitard, Jerome; Witters, Liesbeth; Collaert, Nadine; Claeys, Cor (2017)

Gate induced floating body effect behavior in uniaxially strained SOI nMOSFETs

Agopian, Paula G.D.; Pacheco, Vinicius H.; Martino, Joao A.; Simoen, Eddy; Claeys, Cor (2009)

Gateless 1T-DRAM on n-channel bulk FinFETs

Andrade, Maria G.; Almeida, Luciano M.; Martino, Joao A.; Aoulaiche, Marc; Simoen, Eddy; Claeys, Cor (2012)

High Temperature Influence on the Trade-off between gm/I-D and f(T) of nanosheet NMOS Transistors with Different Metal Gate Stack

Silva, Vanessa C. P.; Martino, Joao A.; Simoen, Eddy; Veloso, Anabela; Agopian, Paula G. D. (2021)