Browsing by author "Takakura, K."
Now showing items 61-78 of 78
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Radiation damage in Si photodiodes by high-temperature irradiation
Ohyama, H.; Simoen, Eddy; Claeys, Cor; Takakura, K.; Matsuoka, H.; Jono, T.; Uemura, J.; Kishikawa, T. (2003) -
Radiation damage induced in Si photodiodes by High-temerature neutron irradiation
Ohyama, H.; Takakura, K.; Matsuoka, H.; Jono, T.; Simoen, Eddy; Claeys, Cor; Uemura, J.; Kishikawa, T. (2003) -
Radiation damage induced in Si photodiodes by high-temperature neutron irradiation
Ohyama, Hidenori; Simoen, Eddy; Claeys, Cor; Takakura, K.; Matsuoko, H.; Jono, T.; Uemura, J.; Kishikawa, T. (2002) -
Radiation damage of Ge diodes and MOSFETs on Ge-on-Si substrates
Nakamura, H.; Nagano, T.; Sukizaki, H.; Sakamoto, K.; Takakura, K.; Ohyama, H.; Kuboyama, S.; Simoen, Eddy; Claeys, Cor (2008) -
Radiation damage of Ge-on-Si devices
Ohyama, H.; Sakamoto, K.; Sukizaki, H.; Takakura, K.; Hayama, K.; Motoki, M.; Matsuo, K.; Nakamura, H.; Sawada, M.; Midorikawa, M.; Kuboyama, S.; De Jaeger, Brice; Simoen, Eddy; Claeys, Cor (2008) -
Radiation damage of InGaAs photodiodes by high-temperature electron and neutron irradiation
Ohyama, H.; Takakura, K.; Hayama, K.; Simoen, Eddy; Claeys, Cor; Toshio, H. (2003) -
Radiation damage of MOSFETs by high-temperature electron irradiation
Ohyama, H.; Hayama, K.; Takakura, K.; Simoen, Eddy; Claeys, Cor (2002) -
Radiation damage of Si photodiodes by high-temperature irradiation
Ohyama, H.; Takakura, K.; Shigaki, K.; Kuboyama, S.; Matsuda, S.; Simoen, Eddy; Claeys, Cor (2003) -
Radiation damage of Si1-xGex S/D p-MOSFETs with different Ge concentrations
Nakashima, T.; Idemoto, T.; Tsunoda, I.; Takakura, K.; Yoneoka, M.; Ohyama, H.; Yoshino, K.; Bargallo Gonzalez, Mireia; Simoen, Eddy; Claeys, Cor (2012) -
Radiation damages in STI diodes after high temperature electron-irradiation
Ohyama, H.; Hayama, K.; Takakura, K.; Miura, T.; Simoen, Eddy; Poyai, Amporn; Takami, Y.; Claeys, Cor (2002) -
Radiation damages of GaAlAs LEDs by 70-MeV proton and 2-MeV electron irradiation
Ohyama, H.; Shitogiden, H.; Takakura, K.; Shigaki, K.; Kuboyama, S.; Kamesawa, C.; Simoen, Eddy; Claeys, Cor (2008) -
Radiation damages of SiC Schottky diodes by electron irradiation
Ohyama, H.; Takakura, K.; Watanabe, T.; Nakabayashi, M.; Simoen, Eddy; Claeys, Cor (2004) -
Radiation damages of SiGe devices by electron irradiation and their thermally recovery bahavior
Nakashima, T.; Idemoto, T.; Takakura, K.; Tsunoda, I.; Yoneoka, M.; Ohyama, H.; Yoshino, K.; Bargallo Gonzalez, Mireia; Simoen, Eddy; Eneman, Geert; Claeys, Cor (2010) -
Radiation source dependence on floating-body effect in thin gate oxide fully-depleted SOI N-MOSFETs
Hayama, K.; Ohyama, H.; Takakura, K.; Kuboyama, S.; Jono, T.; Oka, K.; Matsuda, S.; Simoen, Eddy; Claeys, Cor (2004) -
Radiation tolerance in HfSiON gate MOSFETs by high-energy Particles irradation
Hayama, K.; Takakura, K.; Nishimura, A.; Ohyama, H.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2005) -
Radiaton damage of SiC Schotttky diodes by electron irradiation
Ohyama, H.; Takakura, K.; Watanabe, T.; Nishiyama, K.; Shigaki, K.; Kudou, T.; Nakabayashi, M.; Kuboyama, S.; Matsuda, S.; Kamezawa, C.; Simoen, Eddy; Claeys, Cor (2005) -
Recovery behaviour resulting from thermal annealing in n-MOSFETs irradiated by 20MeV protons
Takakura, K.; Ohyama, H.; Ueda, A.; Nakabayashi, M.; Hayama, K.; Kobayashi, K.; Simoen, Eddy; Mercha, Abdelkarim; Claeys, Cor (2003) -
Strain evaluation of electron irradiated SiGe/Si diodes by Raman spectroscopy
Naka, N.; Ohyama, H.; Tsunoda, I.; Takakura, K.; Bargallo Gonzalez, Mireia; Simoen, Eddy; Claeys, Cor (2010)