Browsing by author "Medjdoub, Farid"

A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs

Marcon, Denis; Kauerauf, Thomas; Medjdoub, Farid; Das, Jo; Van Hove, Marleen; Srivastava, Puneet; Cheng, Kai; Leys, Maarten; Mertens, Robert; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Borghs, Gustaaf (2010-12)

AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation

Cheng, Kai; Degroote, Stefan; Leys, Maarten; Medjdoub, Farid; Derluyn, Joff; Sijmus, Bram; Germain, Marianne; Borghs, Gustaaf (2011)

Enhancement of GaN-based device robustness by means of in-situ SiN cap layer

Medjdoub, Farid; Marcon, Denis; Cheng, Kai; Van Hove, Marleen; Leys, Maarten; Decoutere, Stefaan (2010)

Excellent stability of GaN-on-Si HEMTs with 5 μm gate-drain spacing tested in off-state at a record drain voltage of 200V and 200°C

Marcon, Denis; Van Hove, Marleen; Visalli, Domenica; Derluyn, Joff; Das, Jo; Medjdoub, Farid; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2009)

Excellent stability of GaN-on-Si high electron mobility transistors with 5 μm gate/drain spacing tested in off-state at a record drain voltage of 200 V and 200 °C

Marcon, Denis; Van Hove, Marleen; Visalli, Domenica; Derluyn, Joff; Das, Jo; Medjdoub, Farid; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2010)

GaN-on-Si for power conversion

Germain, Marianne; Derluyn, Joff; Van Hove, Marleen; Medjdoub, Farid; Das, Jo; Marcon, Denis; Degroote, Stefan; Cheng, Kai; Leys, Maarten; Visalli, Domenica; Srivastava, Puneet; Geens, Karen; Viaene, John; Sijmus, Bram; Decoutere, Stefaan; Borghs, Gustaaf (2010)

GaN-on-Si HEMT stress under high electric field condition

Marcon, Denis; Lorenz, Anne; Derluyn, Joff; Das, Jo; Medjdoub, Farid; Cheng, Kai; Degroote, Stefan; Leys, Maarten; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2008)

GaN-on-Si HEMT stress under high electric field condition

Marcon, Denis; Lorenz, Anne; Derluyn, Joff; Das, Jo; Medjdoub, Farid; Cheng, Kai; Degroote, Stefan; Leys, Maarten; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2009)

GaN-on-Si HEMTs Above 10 W/mm at 2 GHz together with high thermal stability at 325°C

Medjdoub, Farid; Marcon, Denis; Das, Jo; Derluyn, Joff; Cheng, Kai; Degroote, Stefan; Vellas, Nicolas; Gaquière, Christophe; Germain, Marianne; Decoutere, Stefaan (2010)

GaN-on-Si power field effect transistors

Germain, Marianne; Derluyn, Joff; Van Hove, Marleen; Medjdoub, Farid; Das, Jo; Cheng, Kai; Degroote, Stefan; Leys, Maarten; Visalli, Domenica; Marcon, Denis; Geens, Karen; Viaene, John; Sijmus, Bram; Decoutere, Stefaan; Cartuyvels, Rudi; Borghs, Gustaaf (2010)

High temperature on- and off-state stress of GaN-on- Si HEMTs with in-situ Si3N4 cap layer

Marcon, Denis; Medjdoub, Farid; Visalli, Domenica; Van Hove, Marleen; Derluyn, Joff; Das, Jo; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Decoutere, Stefaan; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2010)

Influence of thermal anneal steps on the current collapse of Fluorine treated enhancement mode SiN/AlGaN/GaN HEMTs

Lorenz, Anne; Derluyn, Joff; Das, Jo; Cheng, Kai; Degroote, Stefan; Medjdoub, Farid; Germain, Marianne; Borghs, Gustaaf (2009)

Is GaN-on-Si HEMT technology suitable for space applications?

Medjdoub, Farid; Marcon, Denis; Das, Jo; Derluyn, Joff; Cheng, Kai; Degroote, Stefan; Germain, Marianne; Decoutere, Stefaan (2010)

Low leakage high breakdown E-mode GaN DHFET on Si by selective removal of in-situ grown Si3N4

Derluyn, Joff; Van Hove, Marleen; Visalli, Domenica; Lorenz, Anne; Marcon, Denis; Srivastava, Puneet; Geens, Karen; Sijmus, Bram; Viaene, John; Kang, Xuanwu; Das, Jo; Medjdoub, Farid; Cheng, Kai; Degroote, Stefan; Leys, Maarten; Borghs, Gustaaf; Germain, Marianne (2009-12)