Browsing by author "Langer, Robert"
Now showing items 1-20 of 84
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1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates
Kumar, Sujit; Geens, Karen; Vohra, Anurag; Wellekens, Dirk; Cingu, Deepthi; Fabris, Elena; Cosnier, Thibault; Hahn, H.; Bakeroot, Benoit; Posthuma, Niels; Langer, Robert; Decoutere, Stefaan (2024) -
200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs
Cosnier, Thibault; Syshchyk, Olga; De Jaeger, Brice; Geens, Karen; Cingu, Deepthi; Fabris, Elena; Borga, Matteo; Vohra, Anurag; Zhao, Ming; Bakeroot, Benoit; Wellekens, Dirk; Magnani, Alessandro; Vudumula, Pavan; Chatterjee, Urmimala; Langer, Robert; Decoutere, Stefaan (2021) -
Advanced transistors for high frequency applications
Parvais, Bertrand; Peralagu, Uthayasankaran; Alian, AliReza; Vais, Abhitosh; Witters, Liesbeth; Mols, Yves; Walke, Amey; Ingels, Mark; Yu, Hao; Putcha, Vamsi; Khaled, Ahmad; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Yadav, Sachin; ElKashlan, Rana Y.; Baryshnikova, Marina; Mannaert, Geert; Alcotte, Reynald; Simoen, Eddy; Zhao, Ming; zhao, ellen; De Jaeger, Brice; Fleetwood, D.M.; Langer, Robert; Wambacq, Piet; Kunert, Bernardette; Waldron, Niamh; Collaert, Nadine (2020) -
Anisotropic relaxation behavior of InGaAs/GaAs selectively grown in narrow trenches on (001) Si substrates
Guo, Weiming; Mols, Yves; Belz, Jürgen; Beyer, Andreas; Volz, Kerstin; Schulze, Andreas; Langer, Robert; Kunert, Bernardette (2017) -
Application of an Sb Surfactant in InGaAs Nano-ridge Engineering on 300 mm Silicon Substrates
Kunert, Bernardette; Alcotte, Reynald; Mols, Yves; Baryshnikova, Marina; Waldron, Niamh; Collaert, Nadine; Langer, Robert (2021) -
Application of electron channeling contrast imaging to 3D semiconductor structures through proper detector configurations
Han, Han; Hantschel, Thomas; Strakos, Libor; Vystavel, Tomas; Baryshnikova, Marina; Mols, Yves; Kunert, Bernardette; Langer, Robert; Vandervorst, Wilfried; Caymax, Matty (2020) -
Application of scanning spreading resistance microscopy (SSRM) for GaN-on-silicon power structures
Kandaswamy, Prem Kumar; Saripalli, Yoga; Van Hove, Marleen; You, Shuzhen; Zhao, Ming; Liang, Hu; Vanhaeren, Danielle; Vanderheyden, Annelies; Schulze, Andreas; Eyben, Pierre; Decoutere, Stefaan; Langer, Robert; Vandervorst, Wilfried (2014) -
Are extended defects a show stopper for future III-V CMOS technologies?
Claeys, Cor; Hsu, Brent; He, Liang; Mols, Yves; Kunert, Bernardette; Langer, Robert; Waldron, Niamh; Eneman, Geert; Collaert, Nadine; Heyns, Marc; Simoen, Eddy (2018-06) -
Bandlike and localized states of extended defects in n-type In0.53Ga0.47As
Hsu, Brent; Simoen, Eddy; Merckling, Clement; Eneman, Geert; Mols, Yves; Alian, AliReza; Langer, Robert; Collaert, Nadine; Heyns, Marc (2018) -
Cutting-edge epitaxial processes for sub 3 nm technology nodes: application to nanosheet stacks and epitaxial wrap-around contacts
Hikavyy, Andriy; Porret, Clément; Mencarelli, M.; Loo, Roger; Favia, Paola; Ayyad, Mustafa; Briggs, Basoene; Langer, Robert; Horiguchi, Naoto (2021) -
DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates
Yadav, Sachin; Vais, Abhitosh; ElKashlan, Rana Y.; Witters, Liesbeth; Vondkar Kodandarama, Komal; Mols, Yves; Walke, Amey; Yu, Hao; Alcotte, Reynald; Ingels, Mark; Wambacq, Piet; Langer, Robert; Kunert, Bernardette; Waldron, Niamh; Parvais, Bertrand; Collaert, Nadine (2021) -
Dispersion free high voltage III-N buffer development on 200 mm silicon for power electronics
Saripalli, Yoga; Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Novak, Tomas; Van Hove, Marleen; Stoffels, Steve; De Jaeger, Brice; Posthuma, Niels; Marcon, Denis; Decoutere, Stefaan; Langer, Robert (2015) -
Dispersion-free low RF loss GaN-on-Si structures grown on 200 mm Si substrate using MOVPE
Zhao, Ming; Chang, Shane; Langer, Robert; Collaert, Nadine (2019) -
Do we have to worry about extended defects in high-mobility materials?
Simoen, Eddy; Hsu, Brent; He, Liang; Mols, Yves; Kunert, Bernardette; Langer, Robert; Waldron, Niamh; Eneman, Geert; Collaert, Nadine; Heyns, Marc; Claeys, Cor (2018) -
Effective hole mobility and low-frequency noise characterization of strained Ge pFinFETs
Vinicius de Oliveira, Alberto; Simoen, Eddy; Ghedini Der Agopian, Paula; Martino, Joao Antonio; Mitard, Jerome; Witters, Liesbeth; Langer, Robert; Collaert, Nadine; Claeys, Cor; Thean, Aaron (2016) -
Electrical activity of extended defects in III-V semiconductors
Simoen, Eddy; Hsu, Brent; Mols, Yves; Kunert, Bernardette; Langer, Robert; Merckling, Clement; Alian, AliReza; Waldron, Niamh; Eneman, Geert; Collaert, Nadine; Heyns, Marc; Claeys, Cor (2019) -
Electrical activity of extended defects in relaxed InxGa1-xAs hetero-epitaxial layers
Claeys, Cor; Hsu, Brent; Mols, Yves; Kunert, Bernardette; Bender, Hugo; Seidel, Felix; Carolan, Patrick; Langer, Robert; Merckling, Clement; Alian, AliReza; Waldron, Niamh; Eneman, Geert; Collaert, Nadine; Heyns, Marc; Simoen, Eddy (2020) -
Enhancing the defect contrast in ECCI through angular filtering of BSEs
Han, Han; Hantschel, Thomas; Schulze, Andreas; Strakos, Libor; Vystavel, Tomas; Loo, Roger; Kunert, Bernardette; Langer, Robert; Vandervorst, Wilfried; Caymax, Matty (2020) -
Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application
Vohra, Anurag; Geens, Karen; Zhao, Ming; Syshchyk, Olga; Hahn, Herwig; Fahle, Dirk; Bakeroot, Benoit; Wellekens, Dirk; Vanhove, Benjamin; Langer, Robert; Decoutere, Stefaan (2022) -
Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge Fin structures
Loo, Roger; Arimura, Hiroaki; Cott, Daire; Witters, Liesbeth; Pourtois, Geoffrey; Schulze, Andreas; Douhard, Bastien; Vanherle, Wendy; Eneman, Geert; Richard, Olivier; Favia, Paola; Mitard, Jerome; Mocuta, Dan; Langer, Robert; Collaert, Nadine (2017-09)