Browsing by author "Li, Xiangdong"
Now showing items 1-20 of 39
-
200 mm industrial-ready dispersion-free GaN-on-Si buffer technology for 650 V rated power application
Zhao, Ming; Li, Xiangdong; Decoutere, Stefaan (2019) -
200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration
Li, Xiangdong; Van Hove, Marleen; Zhao, Ming; Geens, Karen; Lempinen, Vesa-Pekka; Sormunen, Jaakko; Stoffels, Steve; Groeseneken, Guido; Decoutere, Stefaan (2017) -
200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration
Li, Xiangdong; Van Hove, Marleen; Zhao, Ming; Geens, Karen; Lempinen, Vesa-Pekka; Sormunen, Jaakko; Groeseneken, Guido; Decoutere, Stefaan (2017) -
650 V p-GaN gate power HEMTs on 200 mm engineered substrates
Geens, Karen; Li, Xiangdong; Zhao, Ming; Guo, Weiming; Wellekens, Dirk; Posthuma, Niels; Fahle, Dirk; Aktas, Ozgur; Odnoblyudov, Vlad; Decoutere, Stefaan (2019) -
A comprehensive study of MOVPE growth on 200 mm GaN-on-SOI for monolithic integrated GaN ICs
Zhao, Ming; Geens, Karen; Li, Xiangdong; Amirifar, Nooshin; Decoutere, Stefaan (2021) -
An E-mode p-GaN HEMT monolithically-integrated three-level gate driver operating with a single voltage supply
Nagao, Junichiro; Chatterjee, Urmimala; Li, Xiangdong; Furuta, Jun; Decoutere, Stefaan; Kobayashi, Kazutoshi (2021) -
Analysis of the drain-to-substrate leakage of power HEMTs grown on highly resistive silicon substrate
Borga, Matteo; Meneghini, Matteo; Stoffels, Steve; Van Hove, Marleen; Li, Xiangdong; Zhao, Ming; Meneghesso, Gaudenzio; Zanoni, Enrico (2018) -
Buffer vertical leakage mechanism and reliability of 200-mm GaN-on-SOI
Li, Xiangdong; Zhao, Ming; Bakeroot, Benoit; Geens, Karen; Guo, Weiming; Lempinen, Vesa-Pekka; Sormunen, Jaakko; Groeseneken, Guido; Decoutere, Stefaan (2019) -
CMOS process-compatible 200mm polycrystalline AlN substrates for GaN power transistors
Geens, Karen; Van Hove, Marleen; Li, Xiangdong; Zhao, Ming; atka, Alexander; Vincze, Andrej; Decoutere, Stefaan (2017) -
Demonstration of GaN integrated half-bridge with on-chip drivers on 200-mm engineered substrates
Li, Xiangdong; Geens, Karen; Zhao, Ming; You, Shuzhen; Wischmeyer, Frank; Odnoblyudov, Vladimir; Groeseneken, Guido; Decoutere, Stefaan (2019) -
Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V
Fahle, Dirk; Zhao, Ming; Geens, Karen; Li, Xiangdong; Wellekens, Dirk; Magnani, Alessandro; Amirifar, Nooshin; Bakeroot, Benoit; You, Shuzhen; Odnoblyudov, Vladimir; Aktas, Ozgur; Basceri, Cem; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan; Hahn, Herwig; Heuken, Michael (2019) -
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process
Stoffels, Steve; Geens, Karen; Li, Xiangdong; Wellekens, Dirk; You, Shuzhen; Zhao, Ming; Borga, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio; Meneghini, Matteo; Posthuma, Niels; Van Hove, Marleen; Decoutere, Stefaan (2018) -
GaN Device architectures enabled by next generation substrates
Stoffels, Steve; Geens, Karen; Posthuma, Niels; Zhao, Ming; Liang, Hu; Li, Xiangdong; Wellekens, Dirk; You, Shuzhen; Bakeroot, Benoit; Van Hove, Marleen; Decoutere, Stefaan (2018) -
GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and V-T instability effect
You, Shuzhen; Li, Xiangdong; Geens, Karen; Posthuma, Niels; Zhao, Ming; Liang, Hu; Groeseneken, Guido; Decoutere, Stefaan (2021) -
GaN-on-SOI: Monolithically integrated all GaN ICs for power conversion
Li, Xiangdong; Amirifar, Nooshin; Geens, Karen; Zhao, Ming; Guo, Weiming; Liang, Hu; You, Shuzhen; Posthuma, Niels; De Jaeger, Brice; Stoffels, Steve; Bakeroot, Benoit; Wellekens, Dirk; Vanhove, Benjamin; Cosnier, Thibault; Langer, Robert; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan (2019) -
Impact of crystal orientation on ohmic contact resistance of enhancement-mode pGaN gate high electron mobility transistors on 200 mm Si substrates
Van Hove, Marleen; Posthuma, Niels; Geens, Karen; Wellekens, Dirk; Li, Xiangdong; Decoutere, Stefaan (2018) -
Impact of substrate resistivity on the vertical leakage, breakdown, and trapping in GaN-on-Si E-Mode HEMTs
Borga, Matteo; Meneghini, Matteo; Stoffels, Steve; Li, Xiangdong; Posthuma, Niels; Van Hove, Marleen; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2018) -
Impact of the substrate and buffer design on the performance of GaN on Si
Borga, Matteo; Meneghini, Matteo; Stoffels, Steve; Van Hove, Marleen; Zhao, Ming; Li, Xiangdong; Decoutere, Stefaan; Zanoni, Enrico; Gaudenzio, Meneghesso (2018) -
Influence of driver integration on GaN enhancement mode transistor performance
Deckers, Martijn; Ravyts, Simon; Dalla Vecchia, Mauricio; Chatterjee, Urmimala; Li, Xiangdong; Decoutere, Stefaan; Driesen, Johan (2020) -
Influence of Driver Integration on GaN Enhancement Mode Transistor Performance
Deckers, Martijn; Ravyts, Simon; Dalla Vecchia, Mauricio; Chatterjee, Urmimala; Li, Xiangdong; Decoutere, Stefaan; Driesen, Johan (2020)