Browsing by author "Fazan, Pierre"

80 nm tall thermally stable cost effective FinFETs for advanced dynamic random access memory periphery devices for artificial intelligence/machine learning and automotive applications

Spessot, Alessio; Ritzenthaler, Romain; Dentoni Litta, Eugenio; Dupuy, Emmanuel; O'Sullivan, Barry; Bastos, Joao; Capogreco, Elena; Miyaguchi, Kenichi; Machkaoutsan, Vladimir; Yoon, Younggwang; Fazan, Pierre; Horiguchi, Naoto (2021)

80nm tall thermally stable cost effective FinFETs for advanced DRAM periphery devices for AI/ML and Automotive applications

Spessot, Alessio; Ritzenthaler, Romain; Dentoni Litta, Eugenio; Dupuy, Emmanuel; O'Sullivan, Barry; Bastos, Joao; Capogreco, Elena; Miyaguchi, Kenichi; Machkaoutsan, Vladimir; Yoon, Younggwang; Fazan, Pierre; Horiguchi, Naoto (2020)

A low-power HKMG CMOS platform compatible with DRAM node 2x and beyond

Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; Caillat, Christian; Aoulaiche, Marc; Cho, Moon Ju; Noh, Kyung Bong; Son, Yunik; Na, Hoon Jo; Kauerauf, Thomas; Douhard, Bastien; Nazir, Aftab; Chew, Soon Aik; Milenin, Alexey; Altamirano Sanchez, Efrain; Schoofs, Geert; Albert, Johan; Sebaai, Farid; Vecchio, Emma; Paraschiv, Vasile; Vandervorst, Wilfried; Lee, Sun Ghil; Collaert, Nadine; Fazan, Pierre; Horiguchi, Naoto; Thean, Aaron (2014)

A new high-k/metal gate CMOS integration scheme (Diffusion and Gate Replacement) suppressing gate height asymmetry and compatible with high-thermal budget memory technologies

Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; Caillat, Christian; Cho, Moon Ju; Simoen, Eddy; Aoulaiche, Marc; Albert, Johan; Chew, Soon Aik; Noh, Kyung Bong; Son, Yunik; Fazan, Pierre; Horiguchi, Naoto; Thean, Aaron (2014)

Advanced doping techniques for DRAM peripheral MOSFETs

Spessot, Alessio; Ritzenthaler, Romain; Schram, Tom; Aoulaiche, Marc; Cho, Moon Ju; Toledano Luque, Maria; Fazan, Pierre (2015)

Assessment of SiGe quantum well transistors for DRAM peripheral applications

Ritzenthaler, Romain; Schram, Tom; Eneman, Geert; Mocuta, Anda; Horiguchi, Naoto; Thean, Aaron; Spessot, Alessio; Aoulaiche, Marc; Fazan, Pierre; Noh, Kyung Bong; Son, Yunik (2015)

Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery

Bastos, Joao; O'Sullivan, Barry; Franco, Jacopo; Tyaginov, Stanislav; Truijen, Brecht; Vaisman Chasin, Adrian; Degraeve, Robin; Kaczer, Ben; Ritzenthaler, Romain; Capogreco, Elena; Dentoni Litta, Eugenio; Spessot, Alessio; Higashi, Yusuke; Yoon, Younggwang; Machkaoutsan, Vladimir; Fazan, Pierre; Horiguchi, Naoto (2022)

CMOS integration of high-k/metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits

Dentoni Litta, Eugenio; Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; O'Sullivan, Barry; Machkaoutsan, Vladimir; Fazan, Pierre; Ji, Yunhyuck; Mannaert, Geert; Lorant, Christophe; Sebaai, Farid; Thiam, Arame; Ercken, Monique; Demuynck, Steven; Horiguchi, Naoto (2018)

Cost effective FinFET platform for stand alone DRAM 1Y and beyond memory periphery

Spessot, Alessio; Sharan, Neha; Oh, Hyungrock; Ritzenthaler, Romain; Dentoni Litta, Eugenio; Mallik, Arindam; De Keersgieter, An; Parvais, Bertrand; Sherazi, Yasser; Machkaoutsan, Vladimir; Kim, Cheolgyu; Fazan, Pierre; Mocuta, Dan; Mocuta, Anda; Horiguchi, Naoto (2018-01)

Diffusion and gate replacement: a new gate-first high-k/metal gate CMOS integration scheme suppressing gate height symmetry

Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; Caillat, Christian; Cho, Moon Ju; Simoen, Eddy; Aoulaiche, Marc; Albert, Johan; Chew, Soon Aik; Noh, Kyung Bong; Son, Yunik; Mitard, Jerome; Mocuta, Anda; Horiguchi, Naoto; Fazan, Pierre; Thean, Aaron (2016)

Endurance of one transistor floating body RAM on UTBOX SOI

Aoulaiche, Marc; Bravaix, Alain; Simoen, Eddy; Caillat, Christian; Cho, Moon Ju; Witters, Liesbeth; Blomme, Pieter; Fazan, Pierre; Groeseneken, Guido; Jurczak, Gosia (2014)

Floating body retention analysis for 1T-DRAM

Aoulaiche, Marc; Simoen, Eddy; Witters, Liesbeth; Claeys, Cor; Jurczak, Gosia; Nicoletti, Talitha; dos Santos, Sara; Martino, Jao Martino; Caillat, Christian; Fazan, Pierre (2013)

Gate stack engineering to enhance high- $j/metal gate reliability for DRAM I/O applications

O'Sullivan, Barry; Ritzenthaler, Romain; Simoen, Eddy; Dentoni Litta, Eugenio; Schram, Tom; Vaisman Chasin, Adrian; Linten, Dimitri; Horiguchi, Naoto; Machkaoutsan, Vladimir; Fazan, Pierre; Li, Y (2017)

Gate-stack engineered NBTI improvements in high-voltage logic-for-memory high-k/metal gate devices

O'Sullivan, Barry; Ritzenthaler, Romain; Rzepa, G; Wu, Zhicheng; Dentoni Litta, Eugenio; Richard, Olivier; Conard, Thierry; Machkaoutsan, Vladimir; Fazan, Pierre; Kim, Cheolgyu; Franco, Jacopo; Kaczer, Ben; Grasser, T; Spessot, Alessio; Linten, Dimitri; Horiguchi, Naoto (2019)

I/O thick oxide device integration using Diffusion and Gate Replacement (D&GR) gate stack integration

Ritzenthaler, Romain; Schram, Tom; Cho, Moon Ju; Mocuta, Anda; Horiguchi, Naoto; Thean, Aaron; Spessot, Alessio; Caillat, Christian; Aoulaiche, Marc; Fazan, Pierre; Noh, Kyung Bong; Son, Yunik (2015)

Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors

Aoulaiche, Marc; Federico, Antonio; Simoen, Eddy; Ritzenthaler, Romain; Schram, Tom; Arimura, Hiroaki; Cho, Moon Ju; Kauerauf, Thomas; Crupi, Felice; Spessot, Alessio; Caillat, Christian; Fazan, Pierre; Na, Hoon Joo; Son, Yunik; Noh, Kyung Bong; Groeseneken, Guido; Horiguchi, Naoto; Thean, Aaron (2013)

Impact of dimensions of memory periphery FinFETs on bias temperature instability

Boubaaya, M; O'Sullivan, Barry; Djezzar, B; Franco, Jacopo; Dentoni Litta, Eugenio; Ritzenthaler, Romain; Dupuy, Emmanuel; Machkaoutsan, Vladimir; Fazan, Pierre; Kim, C.; Benaceur-Doumaz, D.; Ferhat Hamida, A.; Spessot, Alessio; Linten, Dimitri; Horiguchi, Naoto (2020)