Browsing by author "Bisi, Davide"
Now showing items 1-13 of 13
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Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics
Wu, Tian-Li; Marcon, Denis; Ronchi, Nicolo; Bakeroot, Benoit; You, Shuzhen; Stoffels, Steve; Van Hove, Marleen; Bisi, Davide; Meneghini, Matteo; Groeseneken, Guido; Decoutere, Stefaan (2015) -
Breakdown investigation in GaN-based MIS-HEMT devices
Marino, Fabio; Bisi, Davide; Meneghini, Matteo; Verzellesi, Giovanni; Zanoni, Enrico; Van Hove, Marleen; You, Shuzhen; Decoutere, Stefaan; Marcon, Denis; Stoffels, Steve; Ronchi, Nicolo; Meneghesso, Gaudio (2014) -
Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs
Rossetto, Isabella; Meneghini, Matteo; Bisi, Davide; Barbato, A; Van Hove, Marleen; Marcon, Denis; Wu, Tian-Li; Decoutere, Stefaan; Meneghesso, Gaudio; Zanoni, Enrico (2015) -
Investigation of the impact of hot electrons and high drain bias on the dynamic Ron increase in GaN-based MIS-HEMTs grown on silicon
Meneghini, Matteo; Bisi, Davide; Stoffels, Steve; Marcon, Denis; Van Hove, Marleen; Wu, Tian-Li; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2014) -
Kinetics of buffer-related RON-increase in GaN-on-silicon MIS-HEMTs
Bisi, Davide; Meneghini, Matteo; Marino, Fabio; Van Hove, Marleen; Marcon, Denis; Stoffels, Steve; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2014) -
Negative bias-induced threshold voltage instability (NBTI) in GaN-on-Si power HEMTs
Meneghini, Matteo; Rossetto, Isabella; Bisi, Davide; Ruzzarin, Maria; Van Hove, Marleen; Stoffels, Steve; Wu, Tian-Li; Marcon, Denis; Decoutere, Stefaan; Meneghesso, Gaudio; Zanoni, Enrico (2016) -
Reliability and parasitic issues in GaN-based power HEMTs
Meneghesso, Gaudenzio; Meneghini, Matteo; Rossetto, Isabella; Bisi, Davide; Stoffels, Steve; Van Hove, Marleen; Decoutere, Stefaan; Zanoni, Enrico (2016) -
Ron collapse, breakdown and degradation of d-mode MIS-HEMTs based on GaN on Si technology
Meneghini, Matteo; Bisi, Davide; Marcon, Denis; Stoffels, Steve; Van Hove, Marleen; Wu, Tian-Li; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2013) -
Transient performance, breakdown and degradation of power transistors GaN on Si technology
Meneghini, Matteo; Bisi, Davide; Marcon, Denis; Stoffels, Steve; Van Hove, Marleen; Wu, Tian-Li; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2013) -
Trapping and reliability assessment in d-mode GaN-based MIS-HEMTs for power applications
Meneghini, Matteo; Bisi, Davide; Marcon, Denis; Stoffels, Steve; Van Hove, Marleen; Wu, Tian-Li; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2014) -
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
Meneghesso, Gaudenzio; Meneghini, Matteo; Bisi, Davide; Rossetto, Isabella; Wu, Tian-Li; Van Hove, Marleen; Marcon, Denis; Stoffels, Steve; Decoutere, Stefaan; Zanoni, Enrico (2016) -
Trapping in GaN-based MIS-HEMTs: role of high drain bias and hot electrons
Meneghini, Matteo; Bisi, Davide; Marcon, Denis; Stoffels, Steve; Van Hove, Marleen; Wu, Tian-Li; Decoutere, Stefaan; Meneghesso, Gaudio; Zanoni, Enrico (2014) -
Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate
Bisi, Davide; Meneghini, Matteo; Van Hove, Marleen; Marcon, Denis; Stoffels, Steve; Wu, Tian-Li; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2015)