Browsing by author "Takeoka, Shinji"
Now showing items 1-14 of 14
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1mA/μm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D
Mitard, Jerome; Witters, Liesbeth; Hellings, Geert; Krom, Raymond; Franco, Jacopo; Eneman, Geert; Hikavyy, Andriy; Vincent, Benjamin; Loo, Roger; Favia, Paola; Dekkers, Harold; Altamirano Sanchez, Efrain; Vanderheyden, Annelies; Vanhaeren, Danielle; Eyben, Pierre; Takeoka, Shinji; Yamaguchi, Shinpei; Van Dal, Mark; Wang, Wei-E; Hong, Sug-Hun; Vandervorst, Wilfried; De Meyer, Kristin; Biesemans, Serge; Absil, Philippe; Horiguchi, Naoto; Hoffmann, Thomas Y. (2011) -
6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT
Franco, Jacopo; Kaczer, Ben; Eneman, Geert; Mitard, Jerome; Stesmans, Andre; Afanasiev, Valeri; Kauerauf, Thomas; Roussel, Philippe; Toledano-Luque, Maria; Cho, Moon Ju; Degraeve, Robin; Grasser, Tibor; Ragnarsson, Lars-Ake; Witters, Liesbeth; Tseng, Joshua; Takeoka, Shinji; Wang, Wei-E; Hoffmann, Thomas Y.; Groeseneken, Guido (2010) -
8Å Tinv gate-first dual channel technology achieving low-Vt high performance CMOS
Witters, Liesbeth; Takeoka, Shinji; Yamaguchi, Shinpei; Hikavyy, Andriy; Shamiryan, Denis; Cho, Moon Ju; Chiarella, Thomas; Ragnarsson, Lars-Ake; Loo, Roger; Kerner, Christoph; Crabbe, Yvo; Franco, Jacopo; Tseng, Joshua; Wang, Wei-E; Rohr, Erika; Schram, Tom; Richard, Olivier; Bender, Hugo; Biesemans, Serge; Absil, Philippe; Hoffmann, Thomas Y. (2010) -
Development of ALD HfZrOx with TDEAH, TDEAZ and H2O
Shi, Xiaoping; Tielens, Hilde; Takeoka, Shinji; Nakabayashi, Takashi; Nyns, Laura; Adelmann, Christoph; Delabie, Annelies; Schram, Tom; Ragnarsson, Lars-Ake; Schaekers, Marc; Date, Lucien; Schreutelkamp, Rob; Van Elshocht, Sven (2010) -
Development of ALD HfZrOx with TDEAH/TDEAZ and H2O
Shi, Xiaoping; Tielens, Hilde; Takeoka, Shinji; Nakabayashi, Takashi; Nyns, Laura; Adelmann, Christoph; Delabie, Annelies; Schram, Tom; Ragnarsson, Lars-Ake; Schaekers, Marc; Date, Lucien; Schreutelkamp, Rob; Van Elshocht, Sven (2011) -
Gate-last vs. gate-first technology for aggressively scaled EOT Logic/RF CMOS
Veloso, Anabela; Ragnarsson, Lars-Ake; Cho, Moon Ju; Devriendt, Katia; Kellens, Kristof; Sebaai, Farid; Suhard, Samuel; Brus, Stephan; Crabbe, Yvo; Schram, Tom; Rohr, Erika; Paraschiv, Vasile; Eneman, Geert; Kauerauf, Thomas; Dehan, Morin; Hong, Sug-Hun; Yamaguchi, Shinpei; Takeoka, Shinji; Higuchi, Yuichi; Tielens, Hilde; Van Ammel, Annemie; Favia, Paola; Bender, Hugo; Franquet, Alexis; Conard, Thierry; Li, X.; Pey, K.-L.; Struyf, Herbert; Mertens, Paul; Absil, Philippe; Horiguchi, Naoto; Hoffmann, Thomas Y. (2011) -
High-mobility 0.85nm-EOT Si0.45Ge0.55 pFETs: delivering high performance at scaled VDD
Mitard, Jerome; Witters, Liesbeth; Garcia Bardon, Marie; Christie, Phillip; Franco, Jacopo; Mercha, Abdelkarim; Magnone, Paolo; Crupi, Felice; Ragnarsson, Lars-Ake; Hikavyy, Andriy; Vincent, Benjamin; Chiarella, Thomas; Loo, Roger; Tseng, Joshua; Yamaguchi, Shinpei; Takeoka, Shinji; Wang, Wei-E; Absil, Philippe; Hoffmann, Thomas Y. (2010) -
High-mobility Si1-xGex-channel PFETs: layout dependence and enhanced scalability, demonstrating 90% performance boost at narrow widths
Eneman, Geert; Yamaguchi, Shinpei; Ortolland, Claude; Takeoka, Shinji; Witters, Liesbeth; Chiarella, Thomas; Favia, Paola; Hikavyy, Andriy; Mitard, Jerome; Kobayashi, M.; Krom, Raymond; Bender, Hugo; Tseng, Joshua; Wang, Wei-E; Vandervorst, Wilfried; Loo, Roger; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2010) -
Implant-free SiGe qqantum well pFET: A novel, highly scalable and low thermal budget device, featuring raised source/drain and high-mobility channel.
Hellings, Geert; Witters, Liesbeth; Krom, Raymond; Mitard, Jerome; Hikavyy, Andriy; Loo, Roger; Schulze, Andreas; Eneman, Geert; Kerner, Christoph; Franco, Jacopo; Chiarella, Thomas; Takeoka, Shinji; Tseng, Joshua; Wang, Wei-E; Vandervorst, Wilfried; Absil, Philippe; Biesemans, Serge; Heyns, Marc; De Meyer, Kristin; Meuris, Marc; Hoffmann, Thomas Y. (2010) -
Layout scaling of Si1-xGex pFETs
Eneman, Geert; Yamaguchi, Shinpei; Ortolland, C.; Takeoka, Shinji; Kobayashi, M.; Witters, Liesbeth; Hikavyy, Andriy; Mitard, Jerome; Loo, Roger; Hoffmann, Thomas Y. (2011) -
On the origin of mobility reduction in ultrathin EOT HK/MG CMOS devices: Impact from gate-stack and device architecture
Ragnarsson, Lars-Ake; Mitard, Jerome; Hong, Sug-Hun; Takeoka, Shinji; Tseng, Joshua; Wang, Wei-E; Yamaguchi, Shinpei; Trojman, Lionel; Kauerauf, Thomas; De Keersgieter, An; Schram, Tom; Rohr, Erika; Collaert, Nadine; Jurczak, Gosia; Bourdelle, Konstantin; Nguyen, B-Y; Absil, Philippe; Hoffmann, Thomas Y. (2011) -
Si1-xGex-channel PFETs: scalability, layout considerations and compatibility with other stress techniques
Eneman, Geert; Hellings, Geert; Mitard, Jerome; Witters, Liesbeth; Yamaguchi, Shinpei; Garcia Bardon, Marie; Christie, Phillip; Ortolland, Claude; Hikavyy, Andriy; Favia, Paola; Bargallo Gonzalez, Mireia; Simoen, Eddy; Crupi, Felice; Kobayashi, Masaharu; Franco, Jacopo; Takeoka, Shinji; Krom, Raymond; Bender, Hugo; Loo, Roger; Claeys, Cor; De Meyer, Kristin; Hoffmann, Thomas Y. (2011) -
SiGe SEG growth for buried channel p-MOS devices
Hikavyy, Andriy; Loo, Roger; Witters, Liesbeth; Takeoka, Shinji; Geypen, Jef; Brijs, Bert; Merckling, Clement; Caymax, Matty; Dekoster, Johan (2009-10) -
SiGe SEG growth for buried channels p-MOS devices
Hikavyy, Andriy; Loo, Roger; Witters, Liesbeth; Takeoka, Shinji; Geypen, Jef; Brijs, Bert; Merckling, Clement; Caymax, Matty; Dekoster, Johan (2009)