Browsing by author "Arutchelvan, Goutham"
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2D materials: roadmap to CMOS integration
Huyghebaert, Cedric; Schram, Tom; Smets, Quentin; Agarwal Kumar, Tarun; Verreck, Devin; Brems, Steven; Phommahaxay, Alain; Chiappe, Daniele; El Kazzi, Salim; Lockhart de la Rosa, Cesar Javier; Arutchelvan, Goutham; Cott, Daire; Ludwig, Jonathan; Gaur, Abhinav; Sutar, Surajit; Leonhardt, Alessandra; Marinov, Daniil; Lin, Dennis; Caymax, Matty; Asselberghs, Inge; Pourtois, Geoffrey; Radu, Iuliana (2018) -
2D MoS2 film thickness impact on the efficiency of surface-doped devices
Lockhart de la Rosa, Cesar Javier; Arutchelvan, Goutham; Leonhardt, Alessandra; Huyghebaert, Cedric; Radu, Iuliana; Heyns, Marc; De Gendt, Stefan (2017) -
Buried power rail integration with FinFETs for ultimate CMOS scaling
Gupta, Anshul; Varela Pedreira, Olalla; Arutchelvan, Goutham; Zahedmanesh, Houman; Devriendt, Katia; Hanssen, Frederik; Tao, Zheng; Ritzenthaler, Romain; Wang, Shouhua; Radisic, Dunja; Kenis, Karine; Teugels, Lieve; Sebaai, Farid; Lorant, Christophe; Jourdan, Nicolas; Chan, BT; Subramanian, Sujith; Schleicher, Filip; Hopf, Toby; Peter, Antony; Rassoul, Nouredine; Debruyn, Haroen; Demonie, Ingrid; Siew, Yong Kong; Chiarella, Thomas; Briggs, Basoene; Zhou, Daisy; Rosseel, Erik; De Keersgieter, An; Capogreco, Elena; Dentoni Litta, Eugenio; Boccardi, Guillaume; Baudot, Sylvain; Mannaert, Geert; Bontemps, Noemie; Sepulveda Marquez, Alfonso; Mertens, Sofie; Kim, Min-Soo; Dupuy, Emmanuel; Vandersmissen, Kevin; Paolillo, Sara; Cousserier, Joris; Yakimets, Dmitry; Lazzarino, Frederic; Chehab, Bilal; Favia, Paola; Drijbooms, Chris; Jaysankar, Manoj; Morin, Pierre; Altamirano Sanchez, Efrain; Mitard, Jerome; Wilson, Chris; Holsteyns, Frank; Boemmels, Juergen; Demuynck, Steven; Tokei, Zsolt; Horiguchi, Naoto (2020) -
Buried Power Rail Integration with Si FinFETs for CMOS Scaling beyond the 5 nm Node
Gupta, Anshul; Mertens, Hans; Tao, Zheng; Demuynck, Steven; Boemmels, Juergen; Arutchelvan, Goutham; Devriendt, Katia; Varela Pedreira, Olalla; Ritzenthaler, Romain; Wang, Shouhua; Radisic, Dunja; Kenis, Karine; Teugels, Lieve; Sebaai, Farid; Lorant, Christophe; Jourdan, Nicolas; Chan, BT; Zahedmanesh, Houman; Subramanian, Sujith; Schleicher, Filip; Hopf, Toby; Peter, Antony; Rassoul, Nouredine; Debruyn, Haroen; Demonie, Ingrid; Siew, Yong Kong; Chiarella, Thomas; Briggs, Basoene; Zhou, Daisy; Rosseel, Erik; De Keersgieter, An; Capogreco, Elena; Dentoni Litta, Eugenio; Boccardi, Guillaume; Baudot, Sylvain; Mannaert, Geert; Bontemps, N.; Sepulveda Marquez, Alfonso; Mertens, Sofie; Kim, Min Soo; Dupuy, Emmanuel; Vandersmissen, Kevin; Paolillo, Sara; Yakimets, Dmitry; Chehab, Bilal; Favia, Paola; Drijbooms, Chris; Cousserier, Joris; Jaysankar, Manoj; Lazzarino, Frederic; Morin, Pierre; Altamirano Sanchez, Efrain; Mitard, Jerome; Wilson, Chris; Holsteyns, Frank; Tokei, Zsolt; Horiguchi, Naoto (2020) -
Channel Length Dependence of PBTI in High-k First RMG Gate Stack Integration Scheme
Parihar, Narendra; Arutchelvan, Goutham; Franco, Jacopo; Baudot, Sylvain; Opdebeeck, Ann; Demuynck, Steven; Arimura, Hiroaki; Ragnarsson, Lars-Ake; Mitard, Jerome; De Heyn, Vincent; Mercha, Abdelkarim (2021) -
Contact Interface Characterization of Graphene contacted MoS2 FETs
Koladi Mootheri, Vivek; Minj, Albert; Arutchelvan, Goutham; Leonhardt, Alessandra; Asselberghs, Inge; Heyns, Marc; Radu, Iuliana; Lin, Dennis (2021) -
Degradation Mapping and Impact of Device Dimension on IGZO TFTs BTI
Rinaudo, Pietro; Vaisman Chasin, Adrian; Franco, Jacopo; Wu, Zhicheng; Subhechha, Subhali; Arutchelvan, Goutham; Eneman, Geert; Yengula Venkata Ramana, Bhuvaneshwari; Rassoul, Nouredine; Delhougne, Romain; Kaczer, Ben; De Wolf, Ingrid; Kar, Gouri Sankar (2023) -
Device and circuit level gate configuration optimization for monolayer 2D material feld-effect transistors
Verreck, Devin; Arutchelvan, Goutham; Heyns, Marc; Radu, Iuliana (2019) -
Dry cleaning of WS2 using reducing downstream plasma
de Marneffe, Jean-Francois; Marinov, Daniil; Zhang, Jianran; With, Patrick; Smets, Quentin; Arutchelvan, Goutham; Voronina, E.; Mankelevitch, Yuri; Rakhimova, Tatyana; Bal, Kristof; Asselberghs, Inge; De Gendt, Stefan (2019) -
Enabling Logic with Backside Connectivity via n-TSVs and its Potential as a Scaling Booster
Veloso, Anabela; Jourdain, Anne; Hiblot, Gaspard; Schleicher, Filip; D'have, Koen; Sebaai, Farid; Radisic, Dunja; Loo, Roger; Hopf, Toby; De Keersgieter, An; Arimura, Hiroaki; Eneman, Geert; Favia, Paola; Geypen, Jef; Arutchelvan, Goutham; Vaisman Chasin, Adrian; Jang, Doyoung; Nyns, Laura; Rosseel, Erik; Hikavyy, Andriy; Mannaert, Geert; Chan, BT; Devriendt, Katia; Demuynck, Steven; Van der Plas, Geert; Ryckaert, Julien; Beyer, Gerald; Dentoni Litta, Eugenio; Beyne, Eric; Horiguchi, Naoto (2021) -
Extreme scaling enabled by MX2 transistors: variability challenges (invited)
Smets, Quentin; Arutchelvan, Goutham; Schram, Tom; Verreck, Devin; Groven, Benjamin; Cott, Daire; Ahmed, Zubair; Shi, Yuanyuan; Sutar, Surajit; Nalin Mehta, Ankit; Lin, Dennis; Asselberghs, Inge; Radu, Iuliana (2021) -
Graphene based Van der Waals contacts on MoS(2)field effect transistors
Koladi Mootheri, Vivek; Arutchelvan, Goutham; Banerjee, Sreetama; Sutar, Surajit; Leonhardt, Alessandra; Boulon, Marie-Emmanuelle; Huyghebaert, Cedric; Houssa, Michel; Asselberghs, Inge; Radu, Iuliana; Heyns, Marc; Lin, Dennis (2021) -
Impact of Back-side Power Delivery Network Layout on the FinFET Device Performance
Arutchelvan, Goutham; Chiarella, Thomas; Arimura, Hiroaki; Veloso, Anabela; Jourdain, Anne; Dentoni Litta, Eugenio; Horiguchi, Naoto; Mitard, Jerome (2022-10-01) -
Impact of device scaling on the electrical properties of MoS2 field-effect transistors
Arutchelvan, Goutham; Smets, Quentin; Verreck, Devin; Ahmed, Zubair; Gaur, Abhinav; Sutar, Surajit; Jussot, Julien; Groven, Benjamin; Heyns, Marc; Lin, Dennis; Asselberghs, Inge; Radu, Iuliana (2021) -
Insight on the characterization of MoS2 based devices and requirements for logic device integration
Lockhart de la Rosa, Cesar Javier; Arutchelvan, Goutham; Radu, Iuliana; Lin, Dennis; Huyghebaert, Cedric; Heyns, Marc; De Gendt, Stefan (2016) -
Interconnect-device co-optimization for field-effect transistors with two-dimensional materials
Verreck, Devin; Arutchelvan, Goutham; Ciofi, Ivan; Heyns, Marc; Radu, Iuliana (2018) -
Introducing 2D-FETs in Device Scaling Roadmap using DTCO
Ahmed, Zubair; Afzalian, Aryan; Schram, Tom; Jang, Doyoung; Verreck, Devin; Smets, Quentin; Schuddinck, Pieter; Chehab, Bilal; Sutar, Surajit; Arutchelvan, Goutham; Soussou, Assawer; Asselberghs, Inge; Spessot, Alessio; Radu, Iuliana; Parvais, Bertrand; Ryckaert, Julien; Na, Myung Hee (2020) -
Investigation of access resistance components in Si-channel p-FinFET using cascaded devices.
Eyben, Pierre; Arutchelvan, Goutham; Chiarella, Thomas; Arimura, Hiroaki; Ritzenthaler, Romain; Mitard, Jerome; Dentoni Litta, Eugenio; Horiguchi, Naoto; Goux, Ludovic (2022-09) -
MoS2 functionalization with a Sub-nm thin SiO2 layer for atomic layer deposition of high-k dielectrics
Zhang, Haodong; Arutchelvan, Goutham; Meersschaut, Johan; Gaur, Abhinav; Conard, Thierry; Bender, Hugo; Lin, Dennis; Asselberghs, Inge; Heyns, Marc; Radu, Iuliana; Vandervorst, Wilfried; Delabie, Annelies (2017) -
Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers
Marinov, Daniil; de Marneffe, Jean-Francois; Smets, Quentin; Arutchelvan, Goutham; Bal, Kristof M.; Voronina, Ekaterina; Rakhimova, Tatyana; Mankelevich, Yuri; El Kazzi, Salim; Nalin Mehta, Ankit; Wyndaele, Pieter-Jan; Heyne, Markus Hartmut; Zhang, Jianran; With, Patrick C.; Banerjee, Sreetama; Neyts, Erik C.; Asselberghs, Inge; Lin, Dennis; De Gendt, Stefan (2021)